Patents by Inventor Patrice Besse
Patrice Besse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150061728Abstract: An electronic device for generating an error signal in response to an electrostatic discharge perturbation is described. The device may comprise: a detection unit for generating a detection signal in response to said electrostatic discharge perturbation, said detection signal correlating in time with said electrostatic discharge perturbation; a clock for generating a clock signal having a clock period; and a protection unit for generating an error signal in response to said detection signal only when a duration of said detection signal exceeds a predefined multiple of said clock period. A method of generating an error signal in response to an electrostatic discharge perturbation, for protecting electronic circuitry, is also disclosed.Type: ApplicationFiled: April 26, 2012Publication date: March 5, 2015Applicant: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Valérie Bernon-Enjalbert, Philippe Givelin
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ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT ARRANGEMENT, ELECTRONIC CIRCUIT AND ESD PROTECTION METHOD
Publication number: 20150049406Abstract: An electrostatic discharge, ESD, protection circuit arrangement is connectable to a first pin and a second pin of an electronic circuit and arranged to at least partly absorb an ESD current entering the electronic circuit through at least one of the first pin or the second pin during an ESD stress event. The protection circuit arrangement comprises a first ESD protection circuit arranged to absorb a first portion of the ESD current during a first part of the ESD stress event during which first part a level of the ESD current exceeds a predetermined current threshold; and a second ESD protection circuit arranged to absorb a second portion of the ESD current, the second portion having a current level below the current threshold, at least during a second part of the ESD stress event. The second ESD protection circuit comprises a current limiting circuit arranged to limit a current through at least a portion of the second ESD protection circuit to the current threshold.Type: ApplicationFiled: February 29, 2012Publication date: February 19, 2015Applicant: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Jerome Casters, Jean-Philippe Laine, Alain Salles -
Patent number: 8928084Abstract: An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a semiconductor layer of the first conductivity type, the first region extending from a surface of the semiconductor layer and being coupled to a first current electrode (C) of the semiconductor device, a well region of a second conductivity type formed in the semiconductor layer extending from the surface of the semiconductor layer, and a second region of the second conductivity type formed in the well region, the second region being coupled to a second current electrode (B). The ESD protection device further comprises a floating region of the second conductivity type formed in the semiconductor layer between the first current electrode (C) and the well region and extending from the surface of the semiconductor layer a predetermined depth.Type: GrantFiled: May 4, 2007Date of Patent: January 6, 2015Assignees: Freescale Semiconductor, Inc., Le Centre National de la Recherché Scientifique (CNRS)Inventors: Philippe Renaud, Patrice Besse, Amaury Gendron, Nicolas Nolhier
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Patent number: 8680621Abstract: An integrated circuit comprising electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to an external terminal of the integrated circuit. The ESD protection circuitry comprises: a thyristor circuit comprising a first bipolar switching device operably coupled to the external terminal and a second bipolar switching device operably coupled to another external terminal, a collector of the first bipolar switching device being coupled to a base of the second bipolar switching device and a base of the first bipolar switching device being coupled to a collector of the second bipolar switching device. A third bipolar switching device is also provided and operably coupled to the thyristor circuit and has a threshold voltage for triggering the thyristor circuit, the threshold voltage being independently configurable of the thyristor circuit.Type: GrantFiled: May 18, 2010Date of Patent: March 25, 2014Assignee: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Jean Philippe Laine
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Patent number: 8558520Abstract: An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.Type: GrantFiled: September 30, 2008Date of Patent: October 15, 2013Assignee: Freescale Semiconductor, Inc.Inventors: Alexis Huot-Marchand, Hamada Ahmed, Patrice Besse, Nicolas Jarrige
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Patent number: 8537519Abstract: A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the switching element being arranged such that an impedance of the switching element between the first and second channel terminals is dependant upon a voltage across the switching terminal and the first channel terminal. The semiconductor device further comprises a resistance element operably coupled between the first channel terminal of the at least one switching element and a reference node, and a clamping structure operably coupled between the switching terminal of the switching element and the reference node.Type: GrantFiled: June 20, 2008Date of Patent: September 17, 2013Assignee: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Stephanie Creveau-Boury, Alexis Huot-Marchand
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Patent number: 8456783Abstract: An integrated circuit comprises electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to one or more external connector(s) of the integrated circuit. The ESD protection circuitry comprises at least one ESD protection component coupled to the one or more external connectors for providing ESD protection thereto. The ESD protection circuitry further comprises an ESD connector coupled to the one or more external connector(s), arranged to couple supplementary ESD protection to the one or more external connector(s).Type: GrantFiled: April 27, 2007Date of Patent: June 4, 2013Assignee: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Erwan Hemon, Philippe Lance
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Publication number: 20130056792Abstract: An integrated circuit comprising electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to an external terminal of the integrated circuit. The ESD protection circuitry comprises: a thyristor circuit comprising a first bipolar switching device operably coupled to the external terminal and a second bipolar switching device operably coupled to another external terminal, a collector of the first bipolar switching device being coupled to a base of the second bipolar switching device and a base of the first bipolar switching device being coupled to a collector of the second bipolar switching device. A third bipolar switching device is also provided and operably coupled to the thyristor circuit and has a threshold voltage for triggering the thyristor circuit, the threshold voltage being independently configurable of the thyristor circuit.Type: ApplicationFiled: May 18, 2010Publication date: March 7, 2013Applicant: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Jean Philippe Laine
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Patent number: 8334575Abstract: A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device.Type: GrantFiled: October 3, 2008Date of Patent: December 18, 2012Assignee: Freescale Semiconductor, Inc.Inventors: Jean Philippe Laine, Patrice Besse, Alexis Huot-Marchand
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Patent number: 8022505Abstract: A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.Type: GrantFiled: March 13, 2006Date of Patent: September 20, 2011Assignee: Freescale Semiconductor, Inc.Inventors: Philippe Renaud, Patrice Besse, Amaury Gendron
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Publication number: 20110180876Abstract: A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device.Type: ApplicationFiled: October 3, 2008Publication date: July 28, 2011Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Jean Philippe Laine, Patrice Besse, Alexis Huot-Marchand
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Publication number: 20110175592Abstract: An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.Type: ApplicationFiled: September 30, 2008Publication date: July 21, 2011Applicant: Freescale Semiconductor, Inc.Inventors: Alexis Huot-Marchand, Hamada Ahmed, Patrice Besse, Nicolas Jarrige
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Publication number: 20110084339Abstract: A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the switching element being arranged such that an impedance of the switching element between the first and second channel terminals is dependant upon a voltage across the switching terminal and the first channel terminal. The semiconductor device further comprises a resistance element operably coupled between the first channel terminal of the at least one switching element and a reference node, and a clamping structure operably coupled between the switching terminal of the switching element and the reference node.Type: ApplicationFiled: June 20, 2008Publication date: April 14, 2011Applicant: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Stephane Greveau-Boury, Alexis Huot-Marchand
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Patent number: 7916439Abstract: A semiconductor switch arrangement comprises a bipolar transistor and a semiconductor power switch having an input node, an output node and a control node for allowing a current path to be formed between the input node and the output node. The bipolar transistor is coupled between the input node and the control node such that upon receiving an electro-static discharge pulse the bipolar transistor allows a current to flow from the input node to the control node upon a predetermined voltage being exceeded at the input node to allow the control node to cause a current to flow from the input node to the output node. Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.Type: GrantFiled: August 3, 2005Date of Patent: March 29, 2011Assignee: Freescale Semiconductor, Inc.Inventors: Michel Zecri, Luca Bertolini, Patrice Besse, Maryse Bafleur, Nicolas Nolhier
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Publication number: 20110058293Abstract: An electrostatic discharge (ESD) protection circuit for protecting one or more devices in an electronic circuit from an ESD current which enters the electronic circuit through one or more input/output pins, the protection circuit comprising: a voltage clamp circuit connectable to the or each pin, for diverting the ESD current from the or each device; and a current sensor circuit connected between the input/output pins and the voltage clamp circuit and connected to the one or more devices, the current sensor circuit for sensing the ESD current and for switching off the or each device when the sensed current exceeds a threshold value, wherein when a current flows in the current mirror circuits above a threshold value the device is caused to switch off.Type: ApplicationFiled: June 4, 2008Publication date: March 10, 2011Inventors: Matthijs Pardoen, Patrice Besse
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Publication number: 20100128402Abstract: An integrated circuit comprises electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to one or more external connector(s) of the integrated circuit. The ESD protection circuitry comprises at least one ESD protection component coupled to the one or more external connectors for providing ESD protection thereto. The ESD protection circuitry further comprises an ESD connector, coupled to the one or more external connector(s), arranged to couple supplementary ESD protection to the one or more external connector(s).Type: ApplicationFiled: April 27, 2007Publication date: May 27, 2010Applicant: Freescale Semiconductor, Inc.Inventors: Patrice Besse, Erwan Hemon, Philippe Lance
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Publication number: 20100127305Abstract: An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a semiconductor layer of the first conductivity type, the first region extending from a surface of the semiconductor layer and being coupled to a first current electrode (C) of the semiconductor device, a well region of a second conductivity type formed in the semiconductor layer extending from the surface of the semiconductor layer, and a second region of the second conductivity type formed in the well region, the second region being coupled to a second current electrode (B). The ESD protection device further comprises a floating region of the second conductivity type formed in the semiconductor layer between the first current electrode (C) and the well region and extending from the surface of the semiconductor layer a predetermined depth.Type: ApplicationFiled: May 4, 2007Publication date: May 27, 2010Applicant: Freescale Semiconductor, Inc.Inventors: Philippe Renaud, Patrice Besse, Amaury Gendron, Nicolas Nolhier
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Publication number: 20090116157Abstract: An electrostatic discharge protection apparatus comprises a stack arrangement having a first electrostatic discharge protection element and a second electrostatic discharge protection element. The stack arrangement is arranged to provide a bias potential between the first and second electrostatic discharge protection elements. In one embodiment, the bias potential can be achieved by a clamp arrangement coupled across the stack arrangement.Type: ApplicationFiled: July 3, 2006Publication date: May 7, 2009Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Patrice Besse, Eric Rolland
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Publication number: 20090057833Abstract: A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.Type: ApplicationFiled: March 13, 2006Publication date: March 5, 2009Inventors: Philippe Renaud, Patrice Besse, Amaury Gendron
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Publication number: 20080246345Abstract: A semiconductor switch arrangement (300) comprises a bipolar transistor (302) and a semiconductor power switch (301) having an input node (306), an output node (304) and a control node (305) for allowing a current path to be formed between the input node (306) and the output node (307). The bipolar transistor (302) is coupled between the input node (306) and the control node (305) such that upon receiving an electro-static discharge pulse the bipolar transistor (302) allows a current to flow from the input node (306) to the control node (305) upon a pre-determined voltage being exceeded at the input node (306) to allow the control node (305) to cause a current to flow from the input node (306) to the output node (307). Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.Type: ApplicationFiled: August 3, 2005Publication date: October 9, 2008Applicants: Freescale Semiconductor, Inc., Le Centre De La Recherche ScientifiqueInventors: Michel Zecri, Luca Bertolini, Patrice Besse, Maryse Bafleur, Nicolas Nolhier