Patents by Inventor Patrice Rey

Patrice Rey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9581188
    Abstract: A mechanical connection between two parts of a microelectromechanical and/or nanoelectromechanical structure forming a pivot with an axis of rotation pivot includes two first beams with an axis parallel to the pivot axis, the first beams configured to work in torsion, and two second beams with an axis orthogonal to the axis of the first beams, the second beams configured to work in bending, each one of the first and second beams being connected at their ends to the two parts of the structure.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: February 28, 2017
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Guillaume Jourdan, Dirk Ettelt, Patrice Rey, Arnaud Walther
  • Publication number: 20150369843
    Abstract: Electrical connection device comprising at least one substrate and one or several first electrical connection elements located on a front face of the electrical connection device such that they can be coupled to contact pads of an electronic device to which the electrical connection device is intended to be connected, each first electrical connection element comprising: at least one support, of which at least one first end is anchored to the substrate such that part of the support is suspended above the front face, the support comprising at least a portion of piezoelectric material located between two electrodes and capable of moving said part of the support in two directions approximately perpendicular to the front face depending on a value of an electrical voltage intended to be applied onto the electrodes; at least one electrical conducting element located on said part of the support.
    Type: Application
    Filed: June 12, 2015
    Publication date: December 24, 2015
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Haykel BEN JAMAA, Patrice REY
  • Publication number: 20150293155
    Abstract: A measurement circuit for a sensor, the measurement circuit includes at least one detection branch including at least a first series of at least one dipole and a second series of at least one dipole, the series being connected in parallel and connected at their inputs to a common input terminal, each series of dipole being connected to a distinct output terminal, and an electronic circuit including a bias circuit configured to apply a bias current to the detection branch from the input terminal, and a read circuit configured to impose on each output terminal the same potential referred to as the “reference potential”; the electronic circuit including a determination circuit for determining variations in impedances of each series of dipole of the detection branch on the basis of the current applied to each output terminal by the read circuit so as to keep the potentials equal.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 15, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Loic JOET, Franck BADETS, Guillaume JOURDAN, Patrice REY
  • Publication number: 20150177281
    Abstract: The invention relates to a measuring circuit for a multisensory detector characterized in that it comprises: a plurality of detection branches mounted in parallel, with each one comprising at least two dipoles mounted in series, and, at least one reference branch, comprising a polarizing source and at least two dipoles mounted in series; with said reference branch being connected in parallel to at least two detection branches among the plurality of branches, so as to form a Wheatstone bridge with each one of the detection branches among the plurality of detection branches.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 25, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Guillaume JOURDAN, Bernard DIEM, Patrice REY, Philippe ROBERT
  • Publication number: 20140331770
    Abstract: A mechanical connection between two parts of a microelectromechanical and/or nanoelectromechanical structure forming a pivot with an axis of rotation pivot includes two first beams with an axis parallel to the pivot axis, the first beams configured to work in torsion, and two second beams with an axis orthogonal to the axis of the first beams, the second beams configured to work in bending, each one of the first and second beams being connected at their ends to the two parts of the structure.
    Type: Application
    Filed: December 12, 2012
    Publication date: November 13, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Guillaume Jourdan, Dirk Ettelt, Patrice Rey, Arnaud Walther
  • Publication number: 20140318906
    Abstract: Inertial sensor comprising a fixed part and at least one mass suspended from the fixed part and means of damping the displacement of the part suspended from the fixed part, said damping means being electromechanical damping means comprising at least one DC power supply source, one electrical resistor and one variable capacitor in series, said variable capacitor being formed partly by the suspended part and partly by the fixed part such that displacement of the suspended part causes a variation of the capacitance of the variable capacitor.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Yannick DEIMERLY, Guillaume JOURDAN, Patrice REY
  • Patent number: 8736145
    Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: May 27, 2014
    Assignees: Freescale Semiconductor, Inc., Commissariar á l'Energie Atomique at aux Energies Alternatives (CEA)
    Inventors: Lianjun Liu, Sergio Pacheco, Francois Perruchot, Emmanuel Defay, Patrice Rey
  • Patent number: 8601885
    Abstract: A triaxial force sensor including: a deformable membrane; a detector detecting a deformation of the membrane configured to carry out a triaxial detection of the force to be detected; and an adhesion mechanism disposed at least at one of the principal faces of the deformable membrane, configured to secure the one of the principal faces of the deformable membrane to at least one elastomer material to be acted upon by the force to be detected, and distributed uniformly at a whole of the surface of the one of the principal faces of the deformable membrane, the deformable membrane being disposed between a cavity and the elastomer material.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: December 10, 2013
    Assignee: Commissariat a l'Energie Atomique et Aux Energies Alternatives
    Inventors: Gilles Delapierre, Patrice Rey
  • Patent number: 8513042
    Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: August 20, 2013
    Assignees: Freescale Semiconductor, Inc., Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA)
    Inventors: Francois Perruchot, Lianjun Liu, Sergio Pacheco, Emmanuel Defay, Patrice Rey
  • Patent number: 8445978
    Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: May 21, 2013
    Assignees: Freescale Semiconductor, Inc., Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA)
    Inventors: Francois Perruchot, Emmanuel Defay, Patrice Rey, Lianjun Liu, Sergio Pacheco
  • Patent number: 8393223
    Abstract: A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: March 12, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Gilles Delapierre, Hubert Grange, Patrice Rey
  • Patent number: 8163586
    Abstract: A method for producing a device with at least one suspended membrane, including the following steps: Producing a trench through a first sacrificial layer and a second layer deposited on the first sacrificial layer, the trench completely surrounding at least a portion of the first sacrificial layer and at least a portion of the second layer, filling all or a portion of the trench with at least one material capable of resisting at least one etching agent, and etching the portion of the first sacrificial layer with the etching agent through at least one opening made in the second layer, the portion of the second layer forming at least one portion of the suspended membrane.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: April 24, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Patrice Rey, Mouna Salhi
  • Publication number: 20120056308
    Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.
    Type: Application
    Filed: June 15, 2010
    Publication date: March 8, 2012
    Applicants: Commissariat A L'Energie Atomique, Freescale Semiconductor, Inc.
    Inventors: Francois Perruchot, Lianjun Liu, Sergio Pacheco, Emmanuel Defay, Patrice Rey
  • Publication number: 20110290037
    Abstract: A triaxial force sensor including: a deformable membrane; a detector detecting a deformation of the membrane configured to carry out a triaxial detection of the force to be detected; and an adhesion mechanism disposed at least at one of the principal faces of the deformable membrane, configured to secure the one of the principal faces of the deformable membrane to at least one elastomer material to be acted upon by the force to be detected, and distributed uniformly at a whole of the surface of the one of the principal faces of the deformable membrane, the deformable membrane being disposed between a cavity and the elastomer material.
    Type: Application
    Filed: February 11, 2010
    Publication date: December 1, 2011
    Applicant: Commissariat A L'Energie Atomique Et Aux Ene Alt
    Inventors: Gilles Delapierre, Patrice Rey
  • Publication number: 20110233693
    Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic.
    Type: Application
    Filed: November 25, 2009
    Publication date: September 29, 2011
    Applicants: Freescale Semiconductor, Inc, COMMISSARIAT A LENGERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: François Perruchot, Emmanuel Defay, Patrice Rey, Lianjun Liu, Sergio Pacheco
  • Publication number: 20110221307
    Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.
    Type: Application
    Filed: November 25, 2009
    Publication date: September 15, 2011
    Applicants: Freescale Semiconductors, Inc., COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lianjun Liu, Sergio Pacheco, Francois Perruchot, Emmanuel Defay, Patrice Rey
  • Patent number: 8004154
    Abstract: The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
    Type: Grant
    Filed: October 5, 2010
    Date of Patent: August 23, 2011
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Matthieu Cueff, Emmanuel Defay, François Perruchot, Patrice Rey
  • Publication number: 20110080069
    Abstract: The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 7, 2011
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Matthieu CUEFF, Emmanuel DEFAY, François PERRUCHOT, Patrice REY
  • Patent number: 7716975
    Abstract: A force measuring device has a rigid stem joined to an essentially flat deformable membrane. The membrane includes detectors for detecting a deformation of the membrane. A portion of the stem comes in contact with an element capable of being subjected to the action of a force. The stem has slots forming anchoring means for interacting with the element. The force measuring device is for use, in particular, in improving the transmission of loads to the deformable membrane.
    Type: Grant
    Filed: May 3, 2006
    Date of Patent: May 18, 2010
    Assignee: Commissariat a l 'Energie Atomique
    Inventors: Patrice Rey, Philippe Robert
  • Patent number: 7694586
    Abstract: A device for measuring force by resistive detection includes a double Wheatstone bridge having at least eight resistive gauges arranged on a membrane where each of the Wheastone bridges are respectively arranged on disjointed portions of the membrane, and two resistive gauges of at least one Wheatstone bridge are reside on a non-deformable area of the membrane.
    Type: Grant
    Filed: March 13, 2006
    Date of Patent: April 13, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Patrice Rey