Patents by Inventor Patricia M. Liu

Patricia M. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200013878
    Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.
    Type: Application
    Filed: July 3, 2019
    Publication date: January 9, 2020
    Inventors: Benjamin Colombeau, Tushar Mandrekar, Patricia M. Liu, Suketu Arun Parikh, Matthias Bauer, Dimitri R. Kioussis, Sanjay Natarajan, Abhishek Dube
  • Publication number: 20200013624
    Abstract: Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.
    Type: Application
    Filed: May 1, 2019
    Publication date: January 9, 2020
    Inventors: Xuebin LI, Errol Antonio C. SANCHEZ, Patricia M. LIU
  • Publication number: 20200013625
    Abstract: Methods for depositing a metal silicide are provide and include heating a substrate having a silicon-containing surface to a deposition temperature, and exposing the substrate to a deposition gas to deposit a silicide film on the silicon-containing surface during a chemical vapor deposition process. The deposition gas contains a silicon precursor, a titanium or other metal precursor, and a phosphorus or other non-metal precursor.
    Type: Application
    Filed: May 20, 2019
    Publication date: January 9, 2020
    Inventors: Xuebin LI, Patricia M. LIU
  • Patent number: 9437640
    Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: September 6, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Sherry Mings, Patricia M. Liu, Steven C. H. Hung
  • Publication number: 20160215392
    Abstract: Apparatus and methods for spatial atomic layer deposition are disclosed. The apparatus include a gas delivery system comprising a first gas flowing through a plurality of legs in fluid communication with a valve and a second gas flowing through a plurality of legs into the valves.
    Type: Application
    Filed: January 20, 2016
    Publication date: July 28, 2016
    Inventors: Joseph Yudovsky, Kevin Griffin, Aaron Miller, Jeff Tobin, Eran Newman, Tatsuya E. Sato, Patricia M. Liu
  • Patent number: 9048183
    Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
    Type: Grant
    Filed: January 3, 2014
    Date of Patent: June 2, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Srinivas Gandikota, Yu Lei, Xinliang Lu, Sang Ho Yu, Hoon Kim, Paul F. Ma, Mei Chang, Maitreyee Mahajani, Patricia M. Liu
  • Publication number: 20150069476
    Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.
    Type: Application
    Filed: September 9, 2014
    Publication date: March 12, 2015
    Inventors: Sherry Mings, Patricia M. Liu, Steven C.H. Hung
  • Patent number: 8778816
    Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: July 15, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, David Thompson, Jeffrey W. Anthis, Vladimir Zubkov, Steven Verhaverbeke, Roman Gouk, Maitreyee Mahajani, Patricia M. Liu, Malcolm J. Bevan
  • Publication number: 20140120712
    Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
    Type: Application
    Filed: January 3, 2014
    Publication date: May 1, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Seshadri GANGULI, Srinivas GANDIKOTA, Yu LEI, Xinliang LU, Sang Ho YU, Hoon KIM, Paul F. MA, Mei CHANG, Maitreyee MAHAJANI, Patricia M. LIU
  • Patent number: 8658522
    Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: February 25, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya Sato, Patricia M. Liu, Fanos Christodoulou
  • Patent number: 8642468
    Abstract: Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: February 4, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Srinivas Gandikota, Yu Lei, Xinliang Lu, Sang Ho Yu, Hoon Kim, Paul F. Ma, Mei Chang, Maitreyee Mahajani, Patricia M. Liu
  • Patent number: 8375892
    Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: February 19, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya Sato, Patricia M. Liu, Fanos Christodoulou
  • Publication number: 20120220116
    Abstract: A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface.
    Type: Application
    Filed: July 27, 2011
    Publication date: August 30, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Atif Noori, Maitreyee Mahajani, Patricia M. Liu, Steven Hung, Tatsuya E. Sato, Mei Chang
  • Publication number: 20120202357
    Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
    Type: Application
    Filed: July 27, 2011
    Publication date: August 9, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, David Thompson, Jeffrey W. Anthis, Vladimir Zubkov, Steven Verhaverbeke, Roman Gouk, Maitreyee Mahajani, Patricia M. Liu, Malcolm J. Bevan
  • Publication number: 20110263115
    Abstract: Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD.
    Type: Application
    Filed: April 25, 2011
    Publication date: October 27, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Srinivas Gandikota, Yu Lei, Xinliang Lu, Sang Ho Yu, Hoon Kim, Paul F. Ma, Mei Chang, Maitreyee Mahajani, Patricia M. Liu
  • Publication number: 20110168093
    Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
    Type: Application
    Filed: March 25, 2011
    Publication date: July 14, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Tatsuya Sato, Patricia M. Liu, Fanos Christodoulou
  • Patent number: 7913645
    Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: March 29, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya Sato, Patricia M. Liu, Fanos Christodoulou
  • Patent number: 7902050
    Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: March 8, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya Sato, Patricia M. Liu, Fanos Christodoulou
  • Publication number: 20100305884
    Abstract: Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.
    Type: Application
    Filed: May 17, 2010
    Publication date: December 2, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Joseph Yudovsky, Jeffrey Tobin, Patricia M. Liu, Faruk Gungor, Tai T. Ngo, Travis Tesch, Kenric Choi
  • Patent number: 7837838
    Abstract: The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: November 23, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Thai Cheng Chua, Alex M. Paterson, Steven Hung, Patricia M. Liu, Tatsuya Sato, Valentin Todorow, John P. Holland