Patents by Inventor Patrick Byron JONTE

Patrick Byron JONTE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210340684
    Abstract: An electrode for an ozone generator or chlorine generator includes an electrically conductive substrate, a doped-Si layer disposed over the conductive substrate, and a boron-doped diamond (BDD) layer disposed over the doped-silicon layer. The doped-silicon layer defines a discrete architecture that maintains adhesion throughout a high temperature CVD boron-doped diamond process. Another electrode having a PVD nitrogen-doped diamond (ta-C:N) layer disposed over a conductive substrate is also provided.
    Type: Application
    Filed: July 13, 2021
    Publication date: November 4, 2021
    Inventors: Vladimir GOROKHOVSKY, Patrick A. SULLIVAN, Klaus BRONDUM, Patrick Byron JONTE
  • Patent number: 11085122
    Abstract: An electrode for an ozone generator or chlorine generator includes an electrically conductive substrate, a doped-Si layer disposed over the conductive substrate, and a boron-doped diamond (BDD) layer disposed over the doped-silicon layer. The doped-silicon layer defines a discrete architecture that maintains adhesion throughout a high temperature CVD boron-doped diamond process. Another electrode having a PVD nitrogen-doped diamond (ta-C:N) layer disposed over a conductive substrate is also provided.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: August 10, 2021
    Assignee: VAPOR TECHNOLOGIES, INC.
    Inventors: Vladimir Gorokhovsky, Patrick A. Sullivan, Klaus Brondum, Patrick Byron Jonte
  • Publication number: 20150376804
    Abstract: An electrode for an ozone generator or chlorine generator includes an electrically conductive substrate, a doped-Si layer disposed over the conductive substrate, and a boron-doped diamond (BDD) layer disposed over the doped-silicon layer. The doped-silicon layer defines a discrete architecture that maintains adhesion throughout a high temperature CVD boron-doped diamond process. Another electrode having a PVD nitrogen-doped diamond (ta-C:N) layer disposed over a conductive substrate is also provided.
    Type: Application
    Filed: June 11, 2015
    Publication date: December 31, 2015
    Inventors: Vladimir GOROKHOVSKY, Patrick A. SULLIVAN, Klaus BRONDUM, Patrick Byron JONTE