Abstract: A two-dose autoinjector for a medicament wherein the locking and releasing of the drive spring of the autoinjector is controlled through stepped guides with ramps for two successive slidings of slides operated by the spring and connected with the syringe and plunger. The guides and the slides are pivotable relative to one another and the sliding direction, while the syringe can only slide axially. To enable or disable the sliding of the slides within the guides an angularly angularly mobile arming member is provided formed with a guide track substantially equal to that of the stationary member where the guides are formed.

Abstract: Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.

Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Abstract: A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.

Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Abstract: An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.

Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Abstract: A two-dose autoinjector for a medicament wherein the locking and releasing of the drive spring of the autoinjector is controlled through stepped guides with ramps for two successive slidings of slides operated by the spring and connected with the syringe and plunger. The guides and the slides are pivotable relative to one another and the sliding direction, while the syringe can only slide axially To enable or disable the sliding of the slides within the guides an angularly angularly mobile arming member is provided formed with a guide track substantially equal to that of the stationary member where the guides are formed.

Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

Abstract: Method and apparatus for tuning a variable resistance resistive sense element of an electronic device. In some embodiments, a value indicative of a selected number of consecutive pulses is stored in a memory location and a resistive sense element (RSE) is set to a baseline RSE resistance. A tuning operation is performed by applying the selected number of consecutive pulses to the RSE to tune the baseline RSE resistance to a final adjusted resistance.

Abstract: Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.

Abstract: An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.

Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Abstract: A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.

Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.

Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.

Abstract: A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.