Patents by Inventor Patrick J. Ryan

Patrick J. Ryan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8961463
    Abstract: A two-dose autoinjector for a medicament wherein the locking and releasing of the drive spring of the autoinjector is controlled through stepped guides with ramps for two successive slidings of slides operated by the spring and connected with the syringe and plunger. The guides and the slides are pivotable relative to one another and the sliding direction, while the syringe can only slide axially. To enable or disable the sliding of the slides within the guides an angularly angularly mobile arming member is provided formed with a guide track substantially equal to that of the stationary member where the guides are formed.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: February 24, 2015
    Assignee: Menarini International Operations Luxembourg S.A.
    Inventors: Mark Jeffrey Edhouse, Patrick J. Ryan, Max William Middleton, Christopher Edward Butcher
  • Patent number: 8942035
    Abstract: Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: January 27, 2015
    Assignee: Seagate Technology LLC
    Inventors: Yiran Chen, Dadi Setiadi, Patrick J. Ryan
  • Patent number: 8784536
    Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: July 22, 2014
    Assignee: Northwestern University
    Inventors: Patrick J. Ryan, Omar K. Farha, Linda J. Broadbelt, Randall Q. Snurr, Youn-Sang Bae
  • Patent number: 8690837
    Abstract: A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: April 8, 2014
    Assignee: TecPharma Licensing AG
    Inventors: Kevin Mori, Céline Kaenel, Annette Drunk, Jürg Hirschel, Ulrich Moser, Markus Tschirren, Martin Wymann, Scott Harris, Patrick J. Ryan, Andrew D. Pidgeon, Jonathan D. Tuckwell, Richard Mann
  • Publication number: 20140013943
    Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.
    Type: Application
    Filed: August 23, 2013
    Publication date: January 16, 2014
    Applicant: Northwestern University
    Inventors: Patrick J. Ryan, Omar K. Farha, Linda J. Broadbelt, Randall Q. Snurr, Youn-Sang Bae
  • Patent number: 8541247
    Abstract: An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: September 24, 2013
    Assignee: Seagate Technology LLC
    Inventors: Haiwen Xi, Antoine Khoueir, Brian Lee, Patrick J. Ryan
  • Patent number: 8518153
    Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: August 27, 2013
    Assignee: Northwestern University
    Inventors: Patrick J. Ryan, Omar K. Farha, Linda J. Broadbelt, Randall Q. Snurr, Youn-Sang Bae
  • Publication number: 20130046238
    Abstract: A two-dose autoinjector for a medicament wherein the locking and releasing of the drive spring of the autoinjector is controlled through stepped guides with ramps for two successive slidings of slides operated by the spring and connected with the syringe and plunger. The guides and the slides are pivotable relative to one another and the sliding direction, while the syringe can only slide axially To enable or disable the sliding of the slides within the guides an angularly angularly mobile arming member is provided formed with a guide track substantially equal to that of the stationary member where the guides are formed.
    Type: Application
    Filed: March 9, 2011
    Publication date: February 21, 2013
    Applicant: MENARINI INTERNATIONAL OPERATIONS LUXEMBOURG S.A.
    Inventors: Mark Jeffrey Edhouse, Patrick J. Ryan, Max William Middleton, Christopher Edward Butcher
  • Patent number: 8335058
    Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: December 18, 2012
    Assignee: Seagate Technology LLC
    Inventors: Song S. Xue, Zheng Gao, Shaoping Li, Kaizhong Gao, Dimitar V. Dimitrov, Konstantin Nikolaev, Patrick J. Ryan
  • Patent number: 8289748
    Abstract: Method and apparatus for tuning a variable resistance resistive sense element of an electronic device. In some embodiments, a value indicative of a selected number of consecutive pulses is stored in a memory location and a resistive sense element (RSE) is set to a baseline RSE resistance. A tuning operation is performed by applying the selected number of consecutive pulses to the RSE to tune the baseline RSE resistance to a final adjusted resistance.
    Type: Grant
    Filed: July 6, 2009
    Date of Patent: October 16, 2012
    Assignee: Seagate Technology LLC
    Inventors: Brian S. Lee, Haiwen Xi, Patrick J. Ryan, Rod Bowman
  • Publication number: 20120243311
    Abstract: Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.
    Type: Application
    Filed: March 23, 2011
    Publication date: September 27, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Yiran Chen, Dadi Setiadi, Patrick J. Ryan
  • Publication number: 20120153413
    Abstract: An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.
    Type: Application
    Filed: December 20, 2010
    Publication date: June 21, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Haiwen Xi, Antoine Khoueir, Brian Lee, Patrick J. Ryan
  • Publication number: 20120073438
    Abstract: Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe—Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe—Kr mixture over a pressure range of 0.01 to 1.0 MPa.
    Type: Application
    Filed: August 17, 2011
    Publication date: March 29, 2012
    Inventors: Patrick J. Ryan, Omar K. Farha, Linda J. Broadbelt, Randall Q. Snurr, Youn-Sang Bae
  • Publication number: 20110230827
    Abstract: A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.
    Type: Application
    Filed: November 22, 2010
    Publication date: September 22, 2011
    Inventors: Kevin Mori, Céline Kaenel, Annette Drunk, Jürg Hirschel, Ulrich Moser, Markus Tschirren, Martin Wymann, Scott Harris, Patrick J. Ryan, Andrew D. Pidgeon, Jonathan D. Tuckwell, Richard Mann
  • Publication number: 20110164335
    Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
    Type: Application
    Filed: March 15, 2011
    Publication date: July 7, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Song S. Xue, Zheng Gao, Shaoping Li, Kaizhong Gao, Dimitar V. Dimitrov, Konstantin Nikolaev, Patrick J. Ryan
  • Patent number: 7944009
    Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: May 17, 2011
    Assignee: Seagate Technology LLC
    Inventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
  • Patent number: 7929258
    Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: April 19, 2011
    Assignee: Seagate Technology LLC
    Inventors: Song S. Xue, Zheng Gao, Shaoping Li, Kaizhong Gao, Dimitar V. Dimitrov, Konstantin Nikolaev, Patrick J. Ryan
  • Publication number: 20110075472
    Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
    Type: Application
    Filed: December 8, 2010
    Publication date: March 31, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
  • Patent number: 7872323
    Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: January 18, 2011
    Assignee: Seagate Technology LLC
    Inventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
  • Patent number: 7810373
    Abstract: A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: October 12, 2010
    Assignee: Seagate Technology LLC
    Inventors: Nurul Amin, Song S. Xue, Patrick J. Ryan