Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: Systems and methods for sense resistors are disclosed. In one aspect, an integrated sense resistor includes a plurality of first metal bumps alternating with a plurality of second metal bumps in at least a first lateral direction and a plurality of thin film resistors each disposed between and electrically connected to a pair of adjacent ones of first and second metal bumps. The integrated sense resistor can be configured for sensing a voltage developed by current flowing across the integrated sense resistor for determining a value of the current.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: This disclosure describes techniques to perform analog signal conditioning (including filtering and amplification) and analog-to-digital conversion (ADC) on a System-in-package (SIP) assembly technology. In particular, the disclosure combines a programmable gain amplifier (PGA), one or more filter circuits, and an ADC circuit onto the same SIP. These devices are coupled together on the SIP using high-accuracy and precise integrated-passive components. The SIP receives an analog signal, amplifies the analog signal with the PGA on the SIP, filters the amplified analog signal with the filter circuit(s) on the SIP, and then performs analog-to-digital conversion on the filtered amplified analog signal with the ADC circuit on the SIP. The SIP can be configured for various applications based on a variety of inputs and control mechanisms.

Abstract: This disclosure describes techniques to perform analog signal conditioning (including filtering and amplification) and analog-to-digital conversion (ADC) on a System-in-package (SIP) assembly technology. In particular, the disclosure combines a programmable gain amplifier (PGA), one or more filter circuits, and an ADC circuit onto the same SIP. These devices are coupled together on the SIP using high-accuracy and precise integrated-passive components. The SIP receives an analog signal, amplifies the analog signal with the PGA on the SIP, filters the amplified analog signal with the filter circuit(s) on the SIP, and then performs analog-to-digital conversion on the filtered amplified analog signal with the ADC circuit on the SIP. The SIP can be configured for various applications based on a variety of inputs and control mechanisms.

Abstract: This disclosure describes techniques to perform analog signal conditioning (including filtering and amplification) and analog-to-digital conversion (ADC) on a System-in-package (SIP) assembly technology. In particular, the disclosure combines a programmable gain amplifier (PGA), one or more filter circuits, and an ADC circuit onto the same SIP. These devices are coupled together on the SIP using high-accuracy and precise integrated-passive components. The SIP receives an analog signal, amplifies the analog signal with the PGA on the SIP, filters the amplified analog signal with the filter circuit(s) on the SIP, and then performs analog-to-digital conversion on the filtered amplified analog signal with the ADC circuit on the SIP. The SIP can be configured for various applications based on a variety of inputs and control mechanisms.

Abstract: This disclosure describes techniques to perform analog signal conditioning (including filtering and amplification) and analog-to-digital conversion (ADC) on a System-in-package (SIP) assembly technology. In particular, the disclosure combines a programmable gain amplifier (PGA), one or more filter circuits, and an ADC circuit onto the same SIP. These devices are coupled together on the SIP using high-accuracy and precise integrated-passive components. The SIP receives an analog signal, amplifies the analog signal with the PGA on the SIP, filters the amplified analog signal with the filter circuit(s) on the SIP, and then performs analog-to-digital conversion on the filtered amplified analog signal with the ADC circuit on the SIP, The SIP can be configured for various applications based on a variety of inputs and control mechanisms.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.