Abstract: Compounds that modulate the oxidoreductase enzyme indoleamine 2,3-dioxygenase, and compositions containing the compounds, are described herein. The use of such compounds and compositions for the treatment and/or prevention of a diverse array of diseases, disorders and conditions, including cancer- and immune-related disorders, that are mediated by indoleamine 2,3-dioxygenase is also provided.

Abstract: The disclosure is directed to improved methods for preparing substituted quinolinylcyclohexylpropanamide compounds.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Provided herein are methods for the clinical treatment of tumors (e.g., advanced solid tumors) in patients having certain levels of serum IL-8 using an anti-IL-8 antibody in combination with an anti-PD-1 antibody.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A modular hydronic system core system and method includes a hydronic fluid flow conduit with closely spaced tees and distribution supply and return portions on a substrate. A supply manifold is coupled to branch feeders that support a circulator pump or zone valve. An ECM circulator along the conduit includes a Bluetooth transmitter to capture and transmit fluid flow rate and pressure. A return manifold includes branch returns with purge/shutoff valves. The branch feeders and returns are connectable to a distribution system having heating elements. Air and dirt separators, and an iron remover remove air, dirt and iron from the fluid. An expansion tank bracket supports a pressure gauge and expansion tank. A zone relay is coupled to the ECM circulator and zone valves on the branch feeders, and includes thermostat terminals. The zone relay captures inputs from the thermostats to control operation of the ECM circulator and zone valves.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Provided herein are methods for the clinical treatment of tumors (e.g., advanced solid tumors) in patients having certain levels of serum IL-8 using an anti-IL-8 antibody in combination with an anti-PD-1 antibody.

Abstract: Provided herein are methods for the clinical treatment of tumors (e.g., advanced solid tumors) in patients having certain levels of serum IL-8 using an anti-IL-8 antibody in combination with an anti-PD-1 antibody.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A system and method for determining a leakage condition of a fluid distribution system in view of a failure to detect a no flow condition at a fluid access point of the fluid distribution system for a pre-established time duration within a pre-established time period longer than the pre-established time duration. The system includes a sensor and optionally a valve, a reporting module and/or a control means. The valve is responsive to commands directing a blockage of flow of fluid. The reporting module may include an alerting module, a messaging module, a cellular phone, and/or an electronic communications network. The control means is coupled with the valve and is enabled to direct the controlling valve to block fluid flow. The control means may be integrated with elements of the reporting module. The leakage condition may be related to a leakage in an inflow direction or alternately in an outflow direction.

Abstract: The invention relates to reamers used in downhole oil well operations, particularly in reaming while drilling applications. Presented is a reamer having an interior channel which runs axisymmetric to an elongate axis of the entire body of the reamer, wherein there are openings along both ends of the reamer, exposing the interior channel. Additionally presented in the reamer are a plurality of paths extending parallel to the interior channel along the exterior of the body of the reamer, and running in a helical pattern along the entirety of the exterior of the body of the reamer. Disposed within the helical paths are a plurality of cutting inserts, which cutting inserts are enabled to provide a uniform cutting surface against a well bore, which preferably improves cutting action and reduces strain on the reamer.

Abstract: A system and method for determining a leakage condition of a fluid distribution system in view of a failure to detect a no flow condition at a fluid access point of the fluid distribution system for a pre-established time duration within a time period longer than the pre-established time duration. The system includes a sensor and optionally a valve, a reporting module and/or a control means. The valve is responsive to commands directing a blockage of flow of fluid. The reporting module may include an alerting module, a messaging module, a cellular phone, and/or an electronic communications network. The control means is coupled with the valve and is enabled to direct the controlling valve to block fluid flow. The control means may be integrated with elements of the reporting module. The leakage condition may be related to a leakage in an inflow direction or alternately in an outflow direction.

Abstract: The invention relates to reamers used in downhole oil well operations, particularly in reaming while drilling applications. Presented is a reamer having an interior channel which runs axisymmetric to an elongate axis of the entire body of the reamer, wherein there are openings along both ends of the reamer, exposing the interior channel. Additionally presented in the reamer are a plurality of paths extending parallel to the interior channel along the exterior of the body of the reamer, and running in a helical pattern along the entirety of the exterior of the body of the reamer. Disposed within the helical paths are a plurality of cutting inserts, which cutting inserts are enabled to provide a uniform cutting surface against a well bore, which preferably improves cutting action and reduces strain on the reamer.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method and system are presented whereby segments of digitized text and descriptors thereof may be inserted by a human editor into segment records. The segment records are each associated with a unique default ordering value expressed along a single dimension continuum, wherein preferably no ordering value is equal or equivalent to any other ordering value. A plurality of unique segment record threads may be formed by the human editor, wherein each thread comprises a unique subset of segment records that are ordered in a different order than the unique default ordering value forms. One or more segments may be included in one or a plurality of unique threads. Threads may be formed by associating a plurality of records with a designated preceding record and designated following record.

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.