Abstract: The present embodiments relate to an apparatus and method of integrating a semiconductor cell in a non-active area of a MOSFET on a semiconductor substrate. An active area of the MOSFET may include a regular MOSFET cell. The semiconductor cell which can have various structures is configured to function as trench MOS barrier Schottky (TMBS) diode. Depending on its structure the TMBS diode may be integrated in a termination region or a shield tie region or a gate finger neighboring region in the non-active area. The integrated TMBS diode as such can limit the body diode conduction and improve the conduction and switching efficiency in a circuit. Additionally, an integrated TMBS diode may improve the softness of reverse recovery of the MOSFET, reduce drain to source voltage overshoot and ringing due to softer recovery and/or shield bounce without wasting any active area of the semiconductor die of the MOSFET.

Abstract: Systems and methods are disclosed to determine that a cannabis plant has been cultivated under desired cultivation conditions. Quantitative processes are disclosed, based on stable carbon isotope ratio analysis, and using modeling constraints and Bayesian approaches to produce a likelihood that a cannabis plant was cultivated under desired conditions (e.g., indoors), and provide a quantitative estimate of the average CO2 concentration in the growth environment.

Abstract: Systems and methods are disclosed to determine that a cannabis plant has been cultivated under desired cultivation conditions. Quantitative processes are disclosed, based on stable carbon isotope ratio analysis, and using modeling constraints and Bayesian approaches to produce a likelihood that a cannabis plant was cultivated under desired conditions (e.g., indoors), and provide a quantitative estimate of the average CO2 concentration in the growth environment.