Abstract: A system comprises a plurality of requesting agents and granting agents configured in an array of rows and a plurality of columns. Corresponding to each requesting agent is a plurality of row address decoders and column address decoders, one row decoder for each row of granting agents and one column decoder for each column of granting agents. Each row decoder receives a first subset of an address' bits from a requesting agent and generates a row output bit provided to each granting agent in the row of that row address decoder. Each column decoder receives a second subset of bits of the address and generates a column output bit provided to each granting agent in the column corresponding to such column decoder. Each granting agent logically combines the row and column output bits from row and column decoders of a requesting agent to generate a request signal for the granting agent.

Abstract: An integrated circuit includes a decision feedback equalizer (DFE) including a first and second digital equalizer logic including circuitry to compensate first and second bits in a received stream and to provide first and second sign bits. The second equalizer logic can run concurrently and can be connected in parallel relative to the first equalizer logic. The second equalizer logic can include a low and high sign bit pipelines providing first and second conditional sign bits by assuming a low and high sign bits, respectively, for a first bits being concurrently processed by the first equalizer logic and a sign bit selection element to select between the first and second conditional sign bits based on the sign bit outcome of the first equalizer logic. The first and second pipelines compensate bits using compensation weights chosen using most recent first and second conditional sign bits and sign bit outcome.

Abstract: An integrated circuit (200) includes a semiconductor memory device (202) operative for determining match between received search data and stored data in a plurality of ternary content addressable memory (TCAM) bitcells (100). The plurality of TCAM bitcells (100) each include bit storage including a pair of memory cells (102-0, 102-1) for holding stored data. The TCAM bitcells (100) also include bit comparison circuitry (104) operative for comparing between the stored data and search data on a search line coupled to the TCAM bitcell, wherein the bit comparison circuitry includes a static logic gate operable to provide a match output signal exclusive of a pulsed input. Match circuitry (205) is coupled to receive the match output signal (108) from the plurality of TCAM bitcells (100) for determining whether a match is present for a given search word.

Abstract: Apparatus for storing all logic simulation signal values generated by a logic simulator during a simulation run is provided. The apparatus includes a runtime array for storing a plurality of signal values for each time instance in a predetermined time period, and a checkpoint cache for selectively storing the plurality of signal values stored in the runtime array at selected time instances. A hyper-checkpoint array is further provided to checkpoint the signal values in the checkpoint cache. In addition, the time instances and values of memory writes are also checkpointed. A user may retrieve the value of any signal values generated during the simulation run and may additionally rewind the simulator to a user-specified time in the simulation run.

Abstract: An integrated circuit includes a substrate having a semiconducting surface (605) and a plurality of standard cells arranged in a plurality of rows including at least a first row (610) and a second row (615) immediately above the first row. The first row (610) include at least a first decap filler cell (602) including a first active area (612) and a field dielectric outside the first active area (612) having a portion with a full field dielectric thickness portion 621 and a portion with a thinned field dielectric (622), and at least a first MOS transistor (618) having a gate electrode (619) on a thick gate dielectric (613) on the first active area (612) connected as a decoupling capacitor.

Abstract: An integrated circuit includes a substrate having a semiconducting surface (605) and a plurality of standard cells arranged in a plurality of rows including at least a first row (610) and a second row (615) immediately above the first row. The first row (610) include at least a first decap filler cell (602) including a first active area (612) and a field dielectric outside the first active area (612) having a portion with a full field dielectric thickness portion 621 and a portion with a thinned field dielectric (622), and at least a first MOS transistor (618) having a gate electrode (619) on a thick gate dielectric (613) on the first active area (612) connected as a decoupling capacitor.

Abstract: An integrated circuit includes a substrate having a semiconducting surface (605) and a plurality of standard cells arranged in a plurality of rows including at least a first row (610) and a second row (615) immediately above the first row. The first row (610) include at least a first decap filler cell (602) including a first active area (612) and a field dielectric outside the first active area (612) having a portion with a full field dielectric thickness portion 621and a portion with a thinned field dielectric (622), and at least a first MOS transistor (618) having a gate electrode (619) on a thick gate dielectric (613) on the first active area (612) connected as a decoupling capacitor.

Abstract: An integrated circuit (200) includes a semiconductor memory device (202) operative for determining match between received search data and stored data in a plurality of ternary content addressable memory (TCAM) bitcells (100). The plurality of TCAM bitcells (100) each include bit storage including a pair of memory cells (102-0, 102-1) for holding stored data. The TCAM bitcells (100) also include bit comparison circuitry (104) operative for comparing between the stored data and search data on a search line coupled to the TCAM bitcell, wherein the bit comparison circuitry includes a static logic gate operable to provide a match output signal exclusive of a pulsed input.

Abstract: A thermometer code to sign and magnitude converter that is particularly useful in a flash ADC is provided. This comprises two conversion units. The first is a thermometer code to Gray code converter and the second a Gray code to sign and magnitude converter. Preferably, the Gray code is of a kind that has a sign bit and has the other bits symmetrically disposed about zero. This form is easily converted to a sign and magnitude code, which is advantageous as it reduces the latency of the converter, which is particularly useful at high data rates.

Abstract: An electronic system (2001) for manipulating an input data argument (D[31:0]) comprising an integer number of bits. The system comprises an input (R) for receiving a right direction argument and an input (L) for receiving a left direction argument. The system also comprises circuitry (200) for producing a first data output having the integer number of bits by rotating the input data argument in response to the first direction argument and the second direction argument. The system also comprises circuitry for providing a modified data output (502). The circuitry for providing comprises circuitry for selecting a first set of bits from the first data output as a first portion of the modified data output and circuitry for providing a second set of bits from a source other than the first data output as a second portion of the modified data output.

Abstract: An integrated circuit device (100) includes circuitry for providing a first shift argument (L[4:0]) indicating shift positions in a first direction and circuitry for providing a second shift argument (R[4:0]) indicating shift positions in a second direction. One rotate stage (ROTATE STAGE 1), in a plurality of rotate stages, is coupled to receive the initial data argument. Each rotate stage, other than the one rotate stage, is coupled to receive a data argument from an output of another one of the rotate stages. Further, each rotate stage is operable to rotate the data argument input into the corresponding rotate stage in response to less than all bits of at least one of the first and second shift arguments. At least one rotate stage is operable to rotate the data argument input into the corresponding rotate stage in response to a sum of respective bit positions of the first and second shift arguments.

Abstract: A data switching circuit (10). The data switching circuit comprises at least one input (10in) for receiving during a same time period a plurality of data streams (ICH0-ICH127). Each of the data streams comprises a plurality of like-sized data quantities. The data switching circuit further comprises a plurality of addressable memories (10x), wherein each of the plurality of addressable memories comprises a plurality of memory cells. The data switching circuit further comprises circuitry (11) for writing into each of the plurality of addressable memories a copy of a same set of data quantities provided by the data streams during a first period of time. Lastly, the data switching circuit further comprises reading circuitry (13, 14), coupled to each respective one of the plurality of addressable memories, for reading during a second period of time a number of data quantities from the respective addressable memory and outputting the read data quantities to output channels.

Abstract: A processor (50) operable in response to an instruction set comprising a plurality of instructions. The processor comprises a functional unit (52) comprising an integer number S of sub-units (541, 542, 543), wherein S is greater than one. Each of the sub-units is operable to execute, during an execution cycle, at least one of the instructions in the instruction set in response to at least two data arguments (A, B). The processor further comprises circuitry (58A1, 58A2, 58A3, 58B1, 58B2) for providing an updated value of the at least two data arguments to less than all S of the sub-units for a single execution cycle.

Abstract: A dynamic logic hold time latch (20). The latch comprises a first phase circuit (12?) operable in a precharge phase and an evaluate phase and a second phase circuit (22) operable in a precharge phase and an evaluate phase. The precharge phase and the evaluate phase of the second phase circuit are out of phase with respect to the precharge phase and the evaluate phase of the first phase circuit. The first phase circuit comprises a precharge node (12?PN) to be precharged to a precharge voltage during the precharge phase of the first phase circuit and operable to be discharged during the evaluate phase of the first phase circuit. The first phase circuit also comprises an output (12?OUT) for providing a signal in response to a state at the precharge node of the first phase circuit.

Abstract: A processor having a changeable architected state. The processor includes an instruction memory for storing instructions. The processor also includes an instruction pipeline, where an instruction which passes entirely through the pipeline alters the architected state. Further, the pipeline comprises circuitry for fetching instructions from the instruction memory into the pipeline. The processor also includes circuitry for storing an annul code corresponding to instructions in the pipeline. Finally, the processor includes circuitry for preventing (FU1 through FU8) one or more selected instructions in the group from altering the architected state in response to the annul code.

Abstract: A dynamic logic circuit (30). The dynamic logic circuit comprises a precharge node (30PN) to be precharged to a precharge voltage (VDD) during a precharge phase and a conditional discharge path (30L, 30DT) connected to the precharge node. The conditional discharge path is operable, during an evaluate phase, to conditionally couple the precharge node to a voltage different than the precharge voltage. The dynamic logic circuit also comprises an output (OUT3) for providing a signal in response to a state at the precharge node. Lastly, the dynamic logic circuit comprises voltage maintaining circuitry (30KT1, 30KT2), coupled to the output, for coupling the precharge voltage to the precharge node during a portion of an instance of the evaluate phase when the conditional discharge path is not enabled during the instance of the evaluate phase.

Abstract: An integrated circuit device (100), comprising an input for receiving an initial data argument (D[31:0]) comprising a plurality of bits. The device also includes circuitry for providing a first shift argument (L[4:0]) indicating a number of shift positions in a first direction, the first shift argument comprising a plurality of bits, and circuitry for providing a second shift argument (R[4:0]) indicating a number of shift positions in a second direction, the second shift argument comprising a plurality of bits. The device also includes a plurality of rotate stages (ROTATE STAGE n), each comprising an input and an output. One rotate stage (ROTATE STAGE 1), in the plurality of rotate stages, is coupled to receive the initial data argument. Each rotate stage, in the plurality of rotate stages, other than the one rotate stage, is coupled to receive a data argument from an output of another one of the rotate stages in the plurality of rotate stages.

Abstract: An electronic system (2001) for manipulating an input data argument (D[31:0]) comprising an integer number of bits. The system comprises an input (R) for receiving a right direction argument and an input (L) for receiving a left direction argument. The system also comprises circuitry (200) for producing a first data output having the integer number of bits by rotating the input data argument in response to the first direction argument and the second direction argument. The system also comprises circuitry for providing a modified data output (502). The circuitry for providing comprises circuitry for selecting a first set of bits from the first data output as a first portion of the modified data output and circuitry for providing a second set of bits from a source other than the first data output as a second portion of the modified data output.

Abstract: A dynamic logic circuit (30). The dynamic logic circuit comprises a precharge node (30PN) to be precharged to a precharge voltage (VDD) during a precharge phase and a conditional discharge path (30L, 30DT) connected to the precharge node. The conditional discharge path is operable, during an evaluate phase, to conditionally couple the precharge node to a voltage different than the precharge voltage. The dynamic logic circuit also comprises an output (OUT3) for providing a signal in response to a state at the precharge node. Lastly, the dynamic logic circuit comprises voltage maintaining circuitry (30KT1, 30KT2), coupled to the output, for coupling the precharge voltage to the precharge node during a portion of an instance of the evaluate phase when the conditional discharge path is not enabled during the instance of the evaluate phase.

Abstract: A dynamic logic hold time latch (20). The latch comprises a first phase circuit (12′) operable in a precharge phase and an evaluate phase and a second phase circuit (22) operable in a precharge phase and an evaluate phase. The precharge phase and the evaluate phase of the second phase circuit are out of phase with respect to the precharge phase and the evaluate phase of the first phase circuit. The first phase circuit comprises a precharge node (12′PN) to be precharged to a precharge voltage during the precharge phase of the first phase circuit and operable to be discharged during the evaluate phase of the first phase circuit. The first phase circuit also comprises an output (12′OUT) for providing a signal in response to a state at the precharge node of the first phase circuit.