Patents by Inventor Patrick Warnaar

Patrick Warnaar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10739687
    Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: August 11, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Hendrik Jan Hidde Smilde, Bastiaan Onne Fagginger Auer, Davit Harutyunyan, Patrick Warnaar
  • Publication number: 20200249576
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Application
    Filed: July 11, 2018
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
  • Publication number: 20200133140
    Abstract: Techniques for determining a value of a parameter of interest of a patterning process are described. One such technique involves obtaining a plurality of calibration data units from one or more targets in a metrology process. Each calibration data unit of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target having a structure formed using the patterning process on the substrate or on a further substrate. A value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
    Type: Application
    Filed: October 15, 2019
    Publication date: April 30, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Hilko Dirk BOS, Hendrik Jan Hidde SMILDE, Mohammadreza HAJIAHMADI, Lukasz Jerzy MACHT, Karel Hendrik Wouter VAN DEN BOS, Sergei SOKOLOV, Lucas Tijn KUNNEMAN
  • Publication number: 20200110342
    Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Zili ZHOU, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard MC Namara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya
  • Publication number: 20200064744
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Application
    Filed: October 30, 2019
    Publication date: February 27, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Patrick WARNAAR, Simon Philip Spencer Hastings, Alberto Da Costa Assafrao, Lukasz Jerzy MACHT
  • Publication number: 20200050114
    Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
  • Publication number: 20200041563
    Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
    Type: Application
    Filed: July 31, 2019
    Publication date: February 6, 2020
    Applicant: Stichting VU
    Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick WARNAAR, Vasco Tomas Tenner, Maurits Van der schaar
  • Publication number: 20200033741
    Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 30, 2020
    Applicant: ASML Netherlands B.V
    Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
  • Publication number: 20190378012
    Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
    Type: Application
    Filed: May 29, 2019
    Publication date: December 12, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Lorenzo Tripodi, Patrick Warnaar, Grzegorz Grzela, Mohammadreza Hajiahmadi, Farzad Farhadzadeh, Patricius Aloysius Jacobus Tinnemans, Scott Anderson Middlebrooks, Adrianus Cornelis Matheus Koopman, Frank Staals, Brennan Peterson, Anton Bernhard Van Oosten
  • Patent number: 10481506
    Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: November 19, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
  • Patent number: 10474043
    Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R<Q?N*Wt; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: November 12, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Maurits Van Der Schaar, Grzegorz Grzela, Erik Johan Koop, Victor Emanuel Calado, Si-Han Zeng
  • Patent number: 10466594
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: November 5, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Simon Philip Spencer Hastings, Alberto Da Costa Assafrao, Lukasz Jerzy Macht
  • Patent number: 10437163
    Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: October 8, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
  • Publication number: 20190265028
    Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
    Type: Application
    Filed: February 15, 2019
    Publication date: August 29, 2019
    Applicants: Stichting VU, Stichting Nederlandse Wetenschappelijk Onderzoek Instituten, Universiteit van Amsterdam, ASML Netherlands B.V.
    Inventors: Patricius Aloysius Jacobus TINNEMANS, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
  • Patent number: 10261427
    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: April 16, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Si-Han Zeng, Yue-Lin Peng, Jen-Yu Fang, Arie Jeffrey Den Boef, Alexander Straaijer, Ching-Yi Hung, Patrick Warnaar
  • Publication number: 20190107781
    Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
    Type: Application
    Filed: October 3, 2018
    Publication date: April 11, 2019
    Applicants: Stichting VU, Stichting Nederlandse Wetenschappelijk Onderzoek Instituten, Universiteit van Amsterdam, ASML Netherlands B.V.
    Inventors: Patricius Aloysius Jacobus TINNEMANS, Arie Jeffrey Den Boef, Armand Eugene Albert Koolen, Nitesh Pandey, Vasco Tomas Tenner, Willem Marie Julia Marcel Coene, Patrick Warnaar
  • Publication number: 20190094712
    Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
    Type: Application
    Filed: November 9, 2018
    Publication date: March 28, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Hendrik Jan Hidde SMILDE, Bastiaan Onne FAGGINGER AUER, Davit HARUTYUNYAN, Patrick WARNAAR
  • Patent number: 10162271
    Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: December 25, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Hendrik Jan Hidde Smilde, Bastiaan Onne Fagginger Auer, Davit Harutyunyan, Patrick Warnaar
  • Publication number: 20180364590
    Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.
    Type: Application
    Filed: November 30, 2016
    Publication date: December 20, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maurits VAN DER SCHAAR, Patrick WARNAAR, Youping ZHANG, Arie Jeffrey DEN BOEF, Feng XIAO, Martin EBERT
  • Publication number: 20180321599
    Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
    Type: Application
    Filed: May 1, 2018
    Publication date: November 8, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Murat BOZKURT, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht