Abstract: A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).

Abstract: A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application.

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract: A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.

Abstract: An alignment mark comprising a periodic structure formed by mark lines is described. In an embodiment, the alignment mark is formed in a scribe lane of a substrate, the scribe lane extending in a scribe lane direction. The alignment mark includes: a first area including a first periodic structure formed by first mark lines extending in a first direction, the first direction being at a first angle ? with respect to the scribe lane direction: 0°<?<90° and a second area comprising second periodic structure formed by second mark lines extending in a second direction, the second direction being at a second angle ? with respect to the scribe lane direction: ?90°??<0°.

Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Abstract: A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.

Abstract: A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.

Abstract: A mark structure includes on a substrate, at least four lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.