Abstract: A system and method is provided which generates integrated circuits for integrated circuits that are portable from process to process. Information generated from an integrated circuit manufactured on a first process is utilized in combination with the parameters of a subsequent manufacturing process to obtain an integrated circuit based upon that second manufacturing process. Through this system and method a particular integrated circuit design is portable from process to process.

Abstract: An improved output driver circuit is disclosed which can be utilized when a plurality of voltage potentials are present. The output driver circuit comprises a first pull-up transistor coupled to a first voltage potential, a second pull-down transistor coupled to a second voltage potential, and a pad member coupled to the first pull-up and second pull-down transistor. The driver circuit further includes a circuit means which is coupled to the pad member and the first pull-up transistor. Accordingly, through this arrangement, the circuit substantially reduces the leakage through the first pull-up transistor when the pad member is coupled to a third voltage potential. An output driver circuit in accordance with the present invention, can be utilized in an integrated circuit environment where multiple voltages such as 3.3 volts and 5 volts are present and the output driver circuit will operate effectively because the leakage path normally associated with such circuits is substantially minimized.

Abstract: A cell architecture for mixed signal applications is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a transistor arrangement in which substrate taps are located adjacent to the transistor pairs. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity. The cell architecture includes a substrate tap area that allows for the accommodation of a plurality of electrically isolated metal lines.

Abstract: A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity. The architecture further includes a plurality of probe lines that are located within the architecture to facilitate testability of the outputs of the architecture.

Abstract: A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity.

Abstract: An automatic logic-model generation system operates on a schematic database and produces logic models incorporating accurate timing information. A verification process is also performed whereby the model is automatically verified for accuracy.

Abstract: A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity.

Abstract: A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity.

Abstract: An automatic logic-model generation system operates on a schematic database and produces logic models incorporating accurate timing information. A verification process is also performed whereby the model is automatically verified for accuracy.

Abstract: A Tri-State circuit element is constructed which is uniquely suited for use in large scale integrated circuit devices wherein a relatively large number of such Tri-State circuits are utilized to drive other circuitry contained within the integrated circuit device. One embodiment of a Tri-State circuit is constructed utilizing a single NAND gate (73), a single inverter (74), a single P channel transistor (76), and two N channel transistors (77, 78) yielding a circuit having a propagation delay of only two gate delays and requiring a total of only nine transistors. Another embodiment of this invention is a Tri-State circuit constructed utilizing a single NOR gate (84), a single inverter (83), a single N channel transistor (88), and two P channel transistors (86, 87). In this embodiment of my invention, a total of nine MOS transistors are required, and the propagation delay between the input terminal and the output terminal is equal to two gate delays.