Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator.

Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator.

Abstract: A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a top metal layer above all other metal layers and the power and ground planes are on a bottom metal layer below all other metal layers. The top and bottom metal layers are separated by a shield that extends beyond the RF signal lines by a distance that is at least the same distance that the shield is away from the RF lines. Low frequency signals are on signal lines below the top metal layer.

Abstract: An ESD protection circuit uses an inductor to create an electromagnetic resonance in conjunction with the load capacitance of a conventional ESD device. By properly tuning the resonance of this combination, the protective properties of the ESD device can be maintained while minimizing its capacitive load on the main circuit. The inductor can be interposed in various series configurations with the ESD device between the main circuit and a voltage rail; alternatively, the inductor can be connected in various configurations in parallel with the ESD device. The inductor may be implemented as an on-chip inductor using conventional IC fabrication technologies, or may be implemented using IC chip bonding wires as inductors.

Abstract: An ESD protection circuit uses an inductor to create an electromagnetic resonance in conjunction with the load capacitance of a conventional ESD device. By properly tuning the resonance of this combination, the protective properties of the ESD device can be maintained while minimizing its capacitive load on the main circuit. The inductor can be interposed in various series configurations with the ESD device between the main circuit and a voltage rail; alternatively, the inductor can be connected in various configurations in parallel with the ESD device. The inductor may be implemented as an on-chip inductor using conventional IC fabrication technologies, or may be implemented using IC chip bonding wires as inductors.

Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator.

Abstract: The present invention provides a synthesizer having an efficient lock detect signal generator, an extended range VCO that can operate within any one of a plurality of adjacent characteristic curves defined by a plurality of adjacent regions, and a divide circuit implemented using only a single counter along with a decoder. This allows for a method of operating the synthesizer, methods of establishing or reestablishing a lock condition using the extended range VCO, and a method of designing a plurality of divide circuits which each use the same single counter and each use a different decoder.

Abstract: The present invention provides a synthesizer having an efficient lock detect signal generator, an extended range VCO that can operate within any one of a plurality of adjacent characteristic curves defined by a plurality of adjacent regions, and a divide circuit implemented using only a single counter along with a decoder. This allows for a method of operating the synthesizer, methods of establishing or reestablishing a lock condition using the extended range VCO, and a method of designing a plurality of divide circuits which each use the same single counter and each use a different decoder.

Abstract: The present invention provides a synthesizer having an efficient lock detect signal generator, an extended range VCO that can operate within any one of a plurality of adjacent characteristic curves defined by a plurality of adjacent regions, and a divide circuit implemented using only a single counter along with a decoder. This allows for a method of operating the synthesizer, methods of establishing or reestablishing a lock condition using the extended range VCO, and a method of designing a plurality of divide circuits which each use the same single counter and each use a different decoder.

Abstract: The present invention provides a synthesizer having an efficient lock detect signal generator, an extended range VCO that can operate within any one of a plurality of adjacent characteristic curves defined by a plurality of adjacent regions, and a divide circuit implemented using only a single counter along with a decoder. This allows for a method of operating the synthesizer, methods of establishing or reestablishing a lock condition using the extended range VCO, and a method of designing a plurality of divide circuits which each use the same single counter and each use a different decoder.