Abstract: A high speed latch and compare function providing rapid cache comparison through the use of a dual rail comparison circuit having transmission gate exclusive or (XOR) circuits.

Abstract: ABIST apparatus with integrated directory compare logic functionality, and ABIST error detection functionality. The apparatus includes two subsystems NOR'ed together. The first subsystem is for bit-wise logically ANDing corresponding array valid bits and tag valid inputs, generating “0” for a match and “1” for a mis-match, and logically ORing the bit-wise result to generate a “1” hit if there are any bit-wise mismatches. The second subsystem further receives ABIST control logic as an input to either: (a). combine array valid bits tag valid inputs to produce valid output, or (b) compare array valid bits with tag valid inputs. The apparatus further includes logical NOR functionality for the outputs of the first and second subsystems.

Abstract: A method for testing SOI technology memory circuits, such as in SRAMs, for weak SOI cells, uses a reset test circuit with a wordline pulse width control circuit which can be implemented without performance impact and allows using unused silicon to minimize area usage impact and permits screening of integrated SOI memory array circuits for weak SOI cells using the test reset circuit to selectively change the wordline pulse width to a reduced time while the memory cell bit select and write signals turn off at normal times to stress the cell write margin. Further, during test, the word line pulse width can be extended by blocking the reset signal of the reset path test circuit to the word path to produce a longer than normal pulse width. In addition, during a test for normal operations the reset signal is allowed to pass through a pass gate multiplexer of the reset test circuit.

Abstract: An exemplary embodiment of the present invention is a system for implementing a column redundancy scheme for arrays with controls that span multiple data bits. The system includes an array of data bits for receiving data inputs, a spare data bit and a field control input line. Also included in the system is circuitry to separate a field control signal from the field control input line into one or more individual control signals for activating a corresponding data bit in the array or for input to a multiplexor. The system further comprises circuitry to steer around a defective data bit in the array. This circuitry includes: a field control signal multiplexor corresponding to each field control signal; a spare control signal multiplexor to activate the spare data bit; a data multiplexor corresponding to each of the data bits in the array; and a spare data multiplexor to steer one of the data inputs to the spare data bit.

Abstract: A method for testing SOI technology memory circuits, such as in SRAMs, for weak SOI cells, uses a reset test circuit with a wordline pulse width control circuit which can be implemented without performance impact and allows using unused silicon to minimize area usage impact and permits screening of integrated SOI memory array circuits for weak SOI cells using the test reset circuit to selectively change the wordline pulse width to a reduced time while the memory cell bit select and write signals turn off at normal times to stress the cell write margin. Further, during test, the word line pulse width can be extended by blocking the reset signal of the reset path test circuit to the word path to produce a longer than normal pulse width. In addition, during a test for normal operations the reset signal is allowed to pass through a pass gate multiplexer of the reset test circuit.