Patents by Inventor Paul A. Ronsheim
Paul A. Ronsheim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9099461Abstract: A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.Type: GrantFiled: June 7, 2012Date of Patent: August 4, 2015Assignee: International Business Machines CorporationInventors: Michael P. Chudzik, Min Dai, Jinping Liu, Paul A. Ronsheim, Joseph F. Shepard, Jr., Shahab Siddiqui
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Patent number: 8900973Abstract: A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.Type: GrantFiled: August 30, 2011Date of Patent: December 2, 2014Assignees: International Business Machines Corporation, Globalfoundries Inc., Renesas Electronics America Inc., STMicroelectronics, Inc.Inventors: Nathaniel C. Berliner, Pranita Kulkarni, Nicolas Loubet, Kingsuk Maitra, Sanjay C. Mehta, Paul A. Ronsheim, Toyoji Yamamoto, Zhengmao Zhu
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Publication number: 20130330843Abstract: A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.Type: ApplicationFiled: June 7, 2012Publication date: December 12, 2013Applicants: GLOBALFOUNDRIES INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Chudzik, Min Dai, Jinping Liu, Paul A. Ronsheim, Joseph F. Shepard, JR., Shahab Siddiqui
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Publication number: 20130052801Abstract: A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.Type: ApplicationFiled: August 30, 2011Publication date: February 28, 2013Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, RENESAS ELECTRONICS AMERICA, INC., GLOBALFOUNDRIES, STMICROELECTRONICS, INC.Inventors: Nathaniel C. Berliner, Pranita Kulkarni, Nicolas Loubet, Kingsuk Maitra, Sanjay C. Mehta, Paul A. Ronsheim, Toyoji Yamamoto, Zhengmao Zhu
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Publication number: 20120190216Abstract: A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process.Type: ApplicationFiled: April 29, 2011Publication date: July 26, 2012Applicant: International Business Machines CorporationInventors: Kevin K. Chan, Eric C. Harley, Isaac Lauer, Kam-Leung Lee, Paul A. Ronsheim
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Publication number: 20120117696Abstract: An integrated coupon structure for atom probe tomography (APT) analysis includes a base portion and an array of microtip posts protruding from the base portion. Both the base portion and the microtip posts formed from a same metal material, and the microtip posts being shaped at an apex thereof so as to be adapted to receive a sample attached thereto.Type: ApplicationFiled: November 9, 2010Publication date: May 10, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Hatzistergos, Christopher M. Molella, Paul Ronsheim, Matthew F. Stanton
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Patent number: 8114748Abstract: A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging from 1200° C. to 1400° C., and a hold time period ranging from 1 millisecond to 5 milliseconds.Type: GrantFiled: June 25, 2009Date of Patent: February 14, 2012Assignee: International Business Machines CorporationInventors: Kam-Leung Lee, Paul A. Ronsheim
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Publication number: 20110290039Abstract: A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.Type: ApplicationFiled: June 1, 2010Publication date: December 1, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Hatzistergos, Jonathan Levy, Christopher M. Molella, Paul A. Ronsheim, Dmitriy Shneyder, Vincent Vazquez
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Publication number: 20100327375Abstract: A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging from 1200° C. to 1400° C., and a hold time period ranging from 1 millisecond to 5 milliseconds.Type: ApplicationFiled: June 25, 2009Publication date: December 30, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kam-Leung Lee, Paul A. Ronsheim
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Publication number: 20080311732Abstract: A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).Type: ApplicationFiled: December 4, 2003Publication date: December 18, 2008Applicant: International Business Machines CorporationInventors: Omer Dokumaci, Paul Ronsheim
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Patent number: 7071103Abstract: The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.Type: GrantFiled: July 30, 2004Date of Patent: July 4, 2006Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Huajie Chen, Michael A. Gribelyuk, Judson R. Holt, Woo-Hyeong Lee, Ryan M. Mitchell, Renee T. Mo, Dan M. Mocuta, Werner A. Rausch, Paul A. Ronsheim, Henry K. Utomo
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Publication number: 20060024934Abstract: The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.Type: ApplicationFiled: July 30, 2004Publication date: February 2, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kevin Chan, Huajie Chen, Michael Gribelyuk, Judson Holt, Woo-Hyeong Lee, Ryan Mitchell, Renee Mo, Dan Mocuta, Werner Rausch, Paul Ronsheim, Henry Utomo
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Patent number: 6749684Abstract: A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.Type: GrantFiled: June 10, 2003Date of Patent: June 15, 2004Assignee: International Business Machines CorporationInventors: Huajie Chen, Dan Mocuta, Richard J. Murphy, Paul Ronsheim, David Rockwell
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Patent number: 6635517Abstract: A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.Type: GrantFiled: August 7, 2001Date of Patent: October 21, 2003Assignee: International Business Machines CorporationInventors: Tze-Chiang Chen, Thomas T. Hwang, Mukesh V. Khare, Effendi Leobandung, Anda C. Mocuta, Paul A. Ronsheim, Ghavam G. Shahidi
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Publication number: 20030032251Abstract: A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.Type: ApplicationFiled: August 7, 2001Publication date: February 13, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tze-Chiang Chen, Thomas T. Hwang, Mukesh V. Khare, Effendi Leobandung, Anda C. Mocuta, Paul A. Ronsheim, Ghavam G. Shahidi
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Patent number: 6509241Abstract: A process for fabricating an MOS device having a highly-localized halo region includes the formation of a first halo region at a first surface of a silicon substrate, and a second halo region at a second surface of the silicon substrate. The second surface of the silicon substrate is formed by anisotropically etching the first surface of the silicon substrate to remove a portion of the material from the substrate. Both the first and second halo regions are formed by low-energy ion implantation. For the fabrication of an n-channel device, boron is implanted at an energy of no more than about 1 keV. Upon implantation and a subsequent annealing process, the first and second halo regions form a continuous halo region within the semiconductor substrate.Type: GrantFiled: December 12, 2000Date of Patent: January 21, 2003Assignee: International Business Machines CorporationInventors: Heemyong Park, Anda C. Mocuta, Paul A. Ronsheim
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Publication number: 20020177264Abstract: MOSFETS are formed by implanting at least a portion of a semiconductor substrate with a depart of a first type to form a first well region, annealing the first well region, implanting the annealed first well region with nitrogen; forming a gate insulator above at least a portion of the first well region; and providing a gate electrode above the gate oxide and providing source/drain regions in the substrate below the gate oxide about the gate electrode.Type: ApplicationFiled: May 25, 2001Publication date: November 28, 2002Applicant: International Business Machines CorporationInventors: Hiroyuki Akatsu, Satoshi Inaba, Ryota Katsumata, Cheruvu S. Murthy, Rajesh Rengarajan, Paul A. Ronsheim
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Publication number: 20020072176Abstract: A process for fabricating an MOS device having a highly-localized halo region includes the formation of a first halo region at a first surface of a silicon substrate, and a second halo region at a second surface of the silicon substrate. The second surface of the silicon substrate is formed by anisotropically etching the first surface of the silicon substrate to remove a portion of the material from the substrate. Both the first and second halo regions are formed by low-energy ion implantation. For the fabrication of an n-channel device, boron is implanted at an energy of no more than about 1 keV. Upon implantation and a subsequent annealing process, the first and second halo regions form a continuous halo region within the semiconductor substrate.Type: ApplicationFiled: December 12, 2000Publication date: June 13, 2002Inventors: Heemyong Park, Anda C. Mocuta, Paul A. Ronsheim
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Patent number: 6399434Abstract: Semiconductor structures having improved dopant configurations are obtained by use of barrier layers containing silicon, nitrogen, and oxygen atoms and having a thickness of about 5 to 50 Å. A doped semiconductor structure with controlled dopant configuration can be formed by: (a) providing a first semiconductor material region, (b) forming an interface layer comprising silicon, oxygen, and nitrogen on the first region, (c) forming a second semiconductor material region on the interface layer, the second semiconductor material region being on an opposite side of the interface layer from the first semiconductor material region, (d) providing a dopant in the second region, and (e) heating the first and second regions whereby at least a portion of the dopant diffuses from the second region through the interface layer to the first region.Type: GrantFiled: April 26, 2000Date of Patent: June 4, 2002Assignee: International Business Machines CorporationInventors: Susan E. Chaloux, Johnathan E. Faltermeier, Ulrike Gruening, Rajarao Jammy, Christopher C. Parks, Paul Parries, Paul A. Ronsheim, Jean-Marc Rousseau
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Patent number: 6387782Abstract: A process for forming an ultra-shallow junction depth, doped region within a silicon substrate. The process includes forming a dielectric film on the substrate, then implanting an ionic dopant species into the structure. The profile of the implanted species includes a population implanted through the dielectric film and into the silicon substrate, and a peak concentration deliberately confined in the dielectric film in close proximity to the interface between the dielectric film and the silicon substrate. A high-energy, low-dosage implant process is used and produces a structure that is substantially free of dislocation loops and other defect clusters. An annealing process is used to drive the peak concentration closer to the interface, and some of the population of the originally implanted species from the dielectric film into the silicon substrate.Type: GrantFiled: June 6, 2001Date of Patent: May 14, 2002Assignees: International Business Machines Corporation, Infineon Technologies North America Corp.Inventors: Hiroyuki Akatsu, Omer H. Dokumaci, Suryanarayan G. Hegde, Yujun Li, Rajesh Rengarajan, Paul A. Ronsheim