Abstract: A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. Two new means to reduce the parasitic capacitance under the source/drain regions are provided. Firstly, the silicon area outside the gate is converted to oxide while protecting a silicon ledge adjacent to the gate with a first spacer. The oxidation can be facilitated using a self-aligned oxygen implant, or implant of some other species. Secondly, the first spacer is removed, replaced with a second spacer, and a new silicon source/drain area is grown by employing lateral selective epi overgrowth and using the now exposed silicon ledge as a seed, over the self-aligned oxide isolation region. This achieves a low-capacitance to the back-plane, while retaining control of the threshold voltages.

Abstract: A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. Two new means to reduce the parasitic capacitance under the source/drain regions are provided. Firstly, the silicon area outside the gate is converted to oxide while protecting a silicon ledge adjacent to the gate with a first spacer. The oxidation can be facilitated using a self-aligned oxygen implant, or implant of some other species. Secondly, the first spacer is removed, replaced with a second spacer, and a new silicon source/drain area is grown by employing lateral selective epi overgrowth and using the now exposed silicon ledge as a seed, over the self-aligned oxide isolation region. This achieves a low-capacitance to the back-plane, while retaining control of the threshold voltages.

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.

Abstract: A system for monitoring an aerosol including a plurality of particles is provided. Each of the particles has a size. The system includes an impactor assembly to receive the aerosol at a first flow rate and remove an exhaust portion of the particles that are less than a minimum particle size or greater than a maximum particle size. A remaining portion of the particles is emitted at a second flow rate lower than the first flow rate. A first sensor measures a characteristic of the remaining portion of the particles.

Abstract: A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. Two new means to reduce the parasitic capacitance under the source/drain regions are provided. Firstly, the silicon area outside the gate is converted to oxide while protecting a silicon ledge adjacent to the gate with a first spacer. The oxidation can be facilitated using a self-aligned oxygen implant, or implant of some other species. Secondly, the first spacer is removed, replaced with a second spacer, and a new silicon source/drain area is grown by employing lateral selective epi overgrowth and using the now exposed silicon ledge as a seed, over the self-aligned oxide isolation region. This achieves a low-capacitance to the back-plane, while retaining control of the threshold voltages.

Abstract: A system for monitoring an aerosol including a plurality of particles is provided. Each of the particles has a size. The system includes an impactor assembly to receive the aerosol at a first flow rate and remove an exhaust portion of the particles that are less than a minimum particle size or greater than a maximum particle size. A remaining portion of the particles is emitted at a second flow rate lower than the first flow rate. A first sensor measures a characteristic of the remaining portion of the particles.

Abstract: The invention is related to a method and equipment used by a radio communication device (2) in a cellular network to determine whether a particular area specific service is applicable. A base station (6) transmits a first character sequence (4) which is advantageously a binary number. The radio communication device (2) selects on the basis of a second character sequence (5) stored in its memory (12) certain characters of the first character sequence (4) for examination. A logic AND or OR function (15-20) is performed for these characters indicating whether said service is applicable. By adding area specific character sequences (7) to the message sent by the base station (6) and making the recognition algorithms of the radio communication device more complex it is possible to establish a versatile service system with geographical and temporal variation. Said service can be, for example, area specific pricing.

Abstract: Improved thermoplastic pattern-forming compositions for investment casting processes. The compositions comprise a blend of a thermoplastic pattern-forming material and from about 5 to about 70% by weight of an aqueous gel that is substantially uniformly dispersed throughout the thermoplastic pattern-forming composition. The aqueous gel comprises water and a gellant. The thermoplastic composition may also contain another component in the form of a filler material.

Abstract: A moldable composition suitable for use as a pattern core material for investment casting. The composition comprises a water-soluble continuous phase organic material and a water-soluble fluorescing dye dispersed through the continuous phase organic material. Related disposable thermoplastic patterns and methods are also disclosed.

Abstract: A two-phase thermoplastic composition adapted for forming thermoplastic patterns. The composition comprises an organic thermoplastic pattern material and at least about 5% by weight of discrete particles of cross-linked poly(methylmethacrylate) that are physically stable at temperatures above 130.degree. F. Also disclosed are investment casting patterns of such composition and processes utilizing such composition.

Abstract: A two-phase thermoplastic composition adapted for forming thermoplastic patterns. The composition comprises an organic thermoplastic pattern material and at least about 5% by weight of discrete particles of cross-linked poly(methylmethacrylate) that are physically stable at temperatures above 130.degree. F. Also disclosed are investment casting patterns of such composition and processes utilizing such composition.