Abstract: A process of forming an integrated circuit forms a high precision capacitor bottom plate with a metallic surface and performs a plasma treatment of the metallic surface. A high precision capacitor dielectric is formed by depositing a first layer of the capacitor dielectric on the high precision capacitor bottom plate wherein the first layer is silicon nitride, depositing a second layer of the capacitor dielectric on the first layer wherein the second portion is silicon dioxide, and depositing a third layer of the capacitor dielectric on the second portion wherein the third layer is silicon nitride. Plasma treatments may also be performed on the layers of capacitor dielectric pre- and/or post-deposition. A metallic high precision capacitor top plate is formed on the high precision capacitor dielectric.

Abstract: A process of forming an integrated circuit forms a high precision capacitor bottom plate with a metallic surface and performs a plasma treatment of the metallic surface. A high precision capacitor dielectric is formed by depositing a first layer of the capacitor dielectric on the high precision capacitor bottom plate wherein the first layer is silicon nitride, depositing a second layer of the capacitor dielectric on the first layer wherein the second portion is silicon dioxide, and depositing a third layer of the capacitor dielectric on the second portion wherein the third layer is silicon nitride. Plasma treatments may also be performed on the layers of capacitor dielectric pre- and/or post-deposition. A metallic high precision capacitor top plate is formed on the high precision capacitor dielectric.

Abstract: The present invention is based upon the generation of a nucleic acid construct which may be used to generate transgenic non-human animals. The construct exploits a filaggrin based promoter region which directs the expression of a reporter sequence operatively linked thereto. The present invention provides a nucleic acid, said nucleic acid encoding a filaggrin promoter element and a nucleic acid sequence operatively linked thereto.

Abstract: A front loading garbage truck with a unique packing blade that creates a self-cleaning garbage truck without the need for manual clean outs and construction for the accomplishment of same. The packing blade includes a top vertical portion that is in a fixed position and a second bottom vertical portion that is retractable into a horizontal position to allow for repeated pass-throughs to collect all debris prior to emptying the garbage from the truck. Additionally, a unique cab shield sits atop the cab portion that contains a plurality of holes on the sides and along the top sloping face to allow ventilation therethrough and prevent damage to the engine caused by excessive heat.

Abstract: The present invention provides a host microorganism with a deletion, disruption or mutation in one or more enzymes of a glycerol dissimilation pathway and a plasmid without an antibiotic resistance gene but carrying one or more genes encoding enzymes involved in glycerol dissimilation, wherein the plasmid is stably maintained by the host microorganism when cultured on glycerol as a carbon source. Such a plasmid maintenance system is beneficial in applications where the presence of an antibiotic resistance gene or the use of antibiotics is either prohibited or problem.

Abstract: The present invention provides non-naturally occurring microorganisms that have been modified to produce isoprene from glycerol. The microorganisms include one of several glycerol dissimilation pathways and one of several isoprene production pathways.

Abstract: A process of forming an integrated circuit forms a high precision capacitor bottom plate with a metallic surface and performs a plasma treatment of the metallic surface. A high precision capacitor dielectric is formed by depositing a first layer of the capacitor dielectric on the high precision capacitor bottom plate wherein the first layer is silicon nitride, depositing a second layer of the capacitor dielectric on the first layer wherein the second portion is silicon dioxide, and depositing a third layer of the capacitor dielectric on the second portion wherein the third layer is silicon nitride. Plasma treatments may also be performed on the layers of capacitor dielectric pre-and/or post-deposition. A metallic high precision capacitor top plate is formed on the high precision capacitor dielectric.

Abstract: An integrated circuit contains lower components in the substrate, a PMD layer, upper components over the PMD layer, lower contacts in the PMD layer connecting some upper components to some lower components, an ILD layer over the upper components, metal interconnect lines over the ILD layer, and upper contacts connecting some upper components to some metal interconnect lines, and also includes annular stacked contacts of lower annular contacts aligned with upper annular contacts. The lower contacts and upper contacts each have a metal liner and a contact metal on the liner. The lower annular contacts have at least one ring of liner metal and contact metal surrounding a pillar of PMD material, and the upper contacts have at least one ring of liner metal and contact metal surrounding a pillar of ILD material. The annular stacked contacts connect the metal interconnects to the lower components.

Abstract: A simple, inexpensive and non-corrosive industrial separation method making it possible to separate zirconium and hafnium tetrachlorides from mixtures thereof, a simple industrial method allowing the zirconium/hafnium separation, and a method making it possible to produce fractions enriched with zirconium and containing hafnium at a trace level are disclosed.

Abstract: A method for producing a memory device with nanoparticles, comprising the steps of: a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric, c) formation of a deposition of nanoparticles on the first dielectric, d) removal of the remaining ionic liquid, e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.

Abstract: The present invention provides a novel biosynthetic pathway for the production of isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol. Further embodiments provide non-naturally occurring microorganism that have been modified to produce isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol and methods of producing isoprene using said microorganism.