Abstract: An integrated circuit contains lower components in the substrate, a PMD layer, upper components over the PMD layer, lower contacts in the PMD layer connecting some upper components to some lower components, an ILD layer over the upper components, metal interconnect lines over the ILD layer, and upper contacts connecting some upper components to some metal interconnect lines, and also includes annular stacked contacts of lower annular contacts aligned with upper annular contacts. The lower contacts and upper contacts each have a metal liner and a contact metal on the liner. The lower annular contacts have at least one ring of liner metal and contact metal surrounding a pillar of PMD material, and the upper contacts have at least one ring of liner metal and contact metal surrounding a pillar of ILD material. The annular stacked contacts connect the metal interconnects to the lower components.

Abstract: Compute clustering software embodied in a computer-readable medium and operable to provide a graphical user interface (GUI) is provided, the GUI operable to present a selection area for illustrating a plurality of receptors in a chassis, each receptor configured to couple to a network device, wherein the selection area conveys a physical location of each of the plurality of receptors, receive information from a user to create a defined cluster by pointing and clicking on a portion of the plurality of receptors illustrated in the selection area, present an image selection window with a plurality of software image choices, receive an image selection for each of one or more selected receptors in the defined cluster, and wherein the software is operable to associate each logical address of the defined cluster with a not necessarily same selected one of the plurality of images.

Abstract: An integrated circuit with a high precision MIM capacitor and a high precision resistor with via etch stop landing pads on the resistor heads that are formed with the capacitor bottom plate material. A process of forming an integrated circuit with a high precision MIM capacitor and a high precision resistor where via etch stop landing pads over the resistor heads are formed using the same layer that is used to form the capacitor bottom plate.

Abstract: The present invention provides a novel biosynthetic pathway for the production of isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol. Further embodiments provide non-naturally occurring microorganism that have been modified to produce isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol and methods of producing isoprene using said microorganism.

Abstract: The present invention provides a novel biosynthetic pathway for the production of isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol. Further embodiments provide non-naturally occurring microorganism that have been modified to produce isoprene from 3-methyl-2-buten-1-ol or 2-methyl-3-buten-2-ol and methods of producing isoprene using said microorganism.

Abstract: A retaining assembly for a cylindrical member and support sleeve in the bore of a component of a DTH. The cylindrical member and support sleeve may, for example, be a foot valve assembly for insertion into a counter bore in a bit. The cylindrical member has a cylindrical member rigidity and at least a portion of the support sleeve has a rigidity greater than the cylindrical member rigidity. A gap is provided between the sleeve and the component bore of the DTH. The cylindrical member deforms in the gap, resulting in the cylindrical member being fixedly sandwiched between the support sleeve and the component bore.

Abstract: A method of forming a barrier/liner for ferroelectric memory capacitors includes chemical vapor depositing 15 to 40 A of a first layer including a refractory metal nitride over a substrate having a plurality of metal-oxide-semiconductor (MOS) gate structures, ferroelectric memory (FeRAM) capacitors, and vias in a dielectric layer overlying the substrate. The first layer is treated using a first plasma treatment including exposing the first layer to a plasma in an atmosphere substantially-free of hydrogen. A 15 to 40 A thick second refractory metal nitride layer is chemical vapor deposited of over the first layer. The second layer is treated using a second plasma treatment including exposing the second layer to a plasma in an atmosphere substantially-free of hydrogen.

Abstract: A method for making electrical interconnections of carbon nanotubes, including a) depositing an ionic liquid including nanoparticles of at least one suspended electrically conducting material, covering at least one surface of an element configured to be used as a support for carbon nanotubes, b) forming a deposit of the nanoparticles at least against the surface of the element, c) removing the remaining ionic liquid, d) growing carbon nanotubes from the deposited nanoparticles, and further including between the c) removing the remaining ionic liquid and the d) growing carbon nanotubes, passivating the deposited nanoparticles not found against the surface of the element.