Abstract: Systems and methods for communication of electronic data in which one or more memory-coupled entity processors programmed to execute a stateless application that persists no data except configuration data in the stateless application and causes the at least one entity processor to receive data in a first format from a data source to which the stateless application executing on the at least one entity processor is loosely coupled; translate the received data to a second format for a data destination; and submit the data in the second format to the data destination to which the stateless application executing on the at least one entity processor is also loosely coupled.

Abstract: Various embodiments described herein relate to providing optimization related to enterprise performance management. In this regard, a request to obtain one or more insights with respect to a formatted version of disparate data associated with one or more data sources is received. The request includes an insight descriptor that describes a goal for the one or more insights. In response to the request, aspects of the formatted version of the disparate data is associated to provide the one or more insights. The associated aspects are determined by the goal and relationships between the aspects of the formatted version of the disparate data. Furthermore, one or more actions are performed based on the one or more insights.

Abstract: An image sensor includes a substrate, a thin film transistor on the substrate, a dielectric layer over the thin film transistor, a stacked metal layer on and extending through the dielectric layer to the thin film transistor, a bulk heterojunction layer directly coupled to the stacked metal layer, either a hole transport layer directly coupled to the bulk heterojunction layer, and a top contact layer directly coupled to the hole transport layer, or a top contact layer directly coupled to the bulk heterojunction layer. The bulk heterojunction layer includes an electron donor/acceptor material, the hole transport layer includes a transparent conductive polymer material, and the top contact layer includes a transparent conductive material. The image sensor includes a moisture barrier layer directly coupled to the top contact layer, including an optically clear adhesive and a laminated transparent barrier film.

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: An image sensor includes a substrate, a thin film transistor on the substrate, a dielectric layer over the thin film transistor, a stacked metal layer on and extending through the dielectric layer to the thin film transistor, a bulk heterojunction layer directly coupled to the stacked metal layer, either a hole transport layer directly coupled to the bulk heterojunction layer, and a top contact layer directly coupled to the hole transport layer, or a top contact layer directly coupled to the bulk heterojunction layer. The bulk heterojunction layer includes an electron donor/acceptor material, the hole transport layer includes a transparent conductive polymer material, and the top contact layer includes a transparent conductive material. The image sensor includes a moisture barrier layer directly coupled to the top contact layer, including an optically clear adhesive and a laminated transparent barrier film.

Abstract: A chaga mushroom chew composition including a tobacco alternative having a mixture of mushrooms from the chaga mushroom-species and additives creating a smokeless tobacco-like composition. The chaga mushroom chew composition provides a healthy substitute for chewing tobacco, the composition capable of being absorbed orally providing health benefits to a user. The tobacco alternative is used to provide a product that has the same look and feel as tobacco.

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: A method for treating polytetrafluoroethylene (PTFE) in its reactor latex form to produce a dry submicron PTFE powder that remains stable without rheology modifiers, surfactants, wetting agents, pH adjusters or other stabilizing additives. Reactor latex PTFE formed during an emulsion polymerization process can be irradiated, with an electron beam or gamma rays, during or after the polymerization to form a product where the dry submicron PTFE powder is free-flowing, tends not to self-agglomerate and tends not to dust into the air upon handling so that the PTFE is readily dispersible when placed in a desired application system or medium.

Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: A method for treating polytetrafluoroethylene (PTFE) in its reactor latex form to produce a dry submicron PTFE powder that remains stable without rheology modifiers, surfactants, wetting agents, pH adjusters or other stabilizing additives. Reactor latex PTFE formed during an emulsion polymerization process can be irradiated, with an electron beam or gamma rays, during or after the polymerization to form a product where the dry submicron PTFE powder is free-flowing, tends not to self-agglomerate and tends not to dust into the air upon handling so that the PTFE is readily dispersible when placed in a desired application system or medium.

Abstract: Cross-threading occurs generally due to angular and axial misalignment between the threaded members during assembly. It is particularly troublesome for unskilled laborers and automated assembly operations, resulting in reduced productivity and damaged components. Accordingly, an anti-cross threading fastener assembly is provided. The assembly comprises a head, a shaft connected with the head, the shaft comprising: a threaded portion located proximate the head, an unthreaded portion located distal the head, and wherein upon insertion of the shaft into a bore of a body, the unthreaded portion coaxially aligns the threaded portion with threads of the bore of the body by contacting an unthreaded portion of the bore of the body.

Abstract: A support assembly cooperative with a vehicular trailer hitch for allowing the temporary erection of sports equipment such as a basketball post, backboard and net, or supports for volleyball or badminton, the support assembly comprising a T-shaped tubular support member having a horizontal member and a vertical member, the horizontal member having a tubular cross section cooperative with the internal diameter of a tubular trailer hitch for the slidable engagement thereof and the vertical tubular member being of a cross section and length sufficient enough to support a basketball backboard and net at a regulation height, in one embodiment, the vertical member being hinged at its mid section so as to allow transport of the assembly without having to remove it from the trailer hitch, and in another embodiment, the vertical member being telescopic and having a crank and pulley mechanism associated therewith in which the support assembly is transported in a non-telescopic mode and then raised to the regulation hei

Abstract: The present invention generally provides a method for increasing the dispersibility of a cationic molecule of interest through the ion exchange of the cationic molecule onto the surface of a substrate having a high surface area. The present invention further provides for the resulting compositions whereby a cationic molecule of interest has been incorporated onto the surface of a high surface area substrate and where the resulting cation/substrate (such as a cation/organoclay) composition experiences greater dispersibility in a target application system than the cationic molecule of interest alone experiences in that same application system. The method of the present invention further serves to substantially reduce the water solubility of the cationic molecule of interest by incorporating it into a high surface area substrate such as an organoclay. Also, the method of the present invention serves to improve the efficacy of the cationic molecule of interest.

Abstract: The present invention generally provides a method for increasing the dispersibility of an anionic molecule of interest by reacting the anionic molecule of interest onto the surface of a cationically modified substrate having a high surface area. The present invention further provides for the resulting compositions whereby an anionic molecule of interest has been incorporated onto the surface of a cationically modified high surface area substrate and where the resulting anion/cationically modified substrate composition (such as an anion/organoclay composition) experiences greater dispersibility in a target application system than the anionic molecule of interest alone experiences in that same application system. The method of the present invention further serves to substantially reduce the water solubility of the anionic molecule of interest by incorporating it into a cationically modified high surface area substrate such as an organoclay.