Abstract: Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time.

Abstract: Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.

Abstract: Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method includes applying voltages to data lines associated with different groups of memory cells during a programming operation. Such a method applies the voltages to the data lines associated with a last group of memory cells being programmed in a different fashion from the other groups of memory cells after the other groups of memory cells have been programmed. Other embodiments including additional memory devices and methods are described.

Abstract: Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.

Abstract: Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time.

Abstract: Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.

Abstract: Apparatus, methods, and systems are disclosed, including those to improve program voltage distribution width using automatic selective slow program convergence (ASSPC). One such method may include determining whether a threshold voltage (Vt) associated with a memory cell has reached a particular pre-program verify voltage. In response to the determination, a voltage applied to a bit-line coupled to the memory cell may be automatically incremented at least twice as the program voltage is increased, until the cell is properly programmed. Additional embodiments are also described.

Abstract: The various embodiments of the present invention provide high precision reference devices, methods, and systems. A high precision reference device may include a plurality of reference cells to receive bias voltages and to provide a cell reference, and an averaging stage coupled to the reference cells to generate an average reference that is the average of the cell references. Other devices, methods, and systems are also claimed and described.

Abstract: A method wherein a special programming mode of a memory is entered and internal program verification by the memory is disabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. The special programming mode is exited and internal program verification by the memory is enabled. The special programming mode may use hashing to optimize testing for a memory such as a nonvolatile flash memory.

Abstract: A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. A host processor verifies external to the memory the programming of the plurality of data words into the memory. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.

Abstract: A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. Hashing is performed with respect to the plurality of data words to generate a first hash value. The host processor compares the first hash value with a second hash value to see whether the first and second hash values are the same or different. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.

Abstract: Programming non-volatile memory devices includes identifying addresses in a data buffer for storing a particular one of a plurality of threshold voltage levels, then pulsing the array memory cells to program the array memory cells to the particular threshold voltage level. The identifying and pulsing is repeated for each of the threshold voltage levels.

Abstract: Programming non-volatile memory devices includes identifying addresses in a data buffer for storing a particular one of a plurality of threshold voltage levels, each of which is represented by a unique pattern of signals and then pulsing the array memory cells associated with the identified addresses to program the array memory cells to the particular threshold voltage level. The identifying and pulsing is repeated for each of the threshold voltage levels. Subsequently, each array memory cell is verified as to whether the cell is programmed with a threshold voltage level that correctly represents the corresponding pattern of signals for that cell.

Abstract: A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. A host processor verifies external to the memory the programming of the plurality of data words into the memory. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.

Abstract: A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. Hashing is performed with respect to the plurality of data words to generate a first hash value. The host processor compares the first hash value with a second hash value to see whether the first and second hash values are the same or different. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.

Abstract: A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.