Abstract: A braided carbon structure and methods of forming and processing are presented. The braided carbon structure comprises axial tows comprising carbon filaments; braid tows at a braid angle relative to the axial tows, the braid tows comprising carbon filaments; and thermoplastic material within at least one of the axial tows or the braid tows, wherein the thermoplastic material makes up less than 40 of each of the at least one of the axial tows or the braid tows.

Abstract: A system recommends to a healthcare professional (HCP) (230) medical literature that is of relevance to the HCP's patients. The system communicates with the HCP (230) and accesses electronic health record (EHR) documents in a database (210) associated with the HCP's patients. The system analyzes the contents of the EHR documents to query a medical-literature database (212) for publications that are deemed relevant to the EHR documents. The extracted publications are then presented to the HCP.

Abstract: An aqueous siloxane resin containing emulsion is prepared by: (i) adding water, at least one nonionic surfactant, optionally adding an ionic surfactant, and a catalyst, to a reaction vessel, and heating the contents of the vessel to form a mixture; (ii) adding to the mixture at least one silane monomer of the formula RSi(OR?)3; (iii) optionally, adding to the mixture, silane monomers of the formula R2Si(OR?)2 or R3SiOR?; (iv) allowing the silane monomer to hydrolyze and condense by a polymerization reaction in the catalyzed aqueous mixture; (v) terminating the reaction by neutralizing the mixture; and (vi) recovering from the mixture a siloxane resin emulsion containing a siloxane resin.

Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Abstract: A soluble abrasive is used to lap workpieces to overcome the problem of embedding and retaining abrasive particles in the workpieces. The soluble abrasives are dissolved from the workpiece even if they become embedded in the workpiece. For example, the abrasives may be dissolved with water and comprise ionic salts. The soluble abrasive has a hardness that is equal to or slightly greater than the hardness of the metal being lapped.

Abstract: A soluble abrasive is used to lap workpieces to overcome the problem of embedding and retaining abrasive particles in the workpieces. The soluble abrasives are dissolved from the workpiece even if they become embedded in the workpiece. For example, the abrasives may be dissolved with water and comprise ionic salts. The soluble abrasive has a hardness that is equal to or slightly greater than the hardness of the metal being lapped.

Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Abstract: An airflow metering device, including a conventional airflow sensing device signally connected to a signal processor is shown, having an input flow signal correlatable to a magnitude of mass air flowing past the airflow sensing device. The signal processor is operable to determine a flow correction factor based upon a direction and magnitude of the mass air flowing past the airflow sensing device. The output of the airflow metering device is an accurate measure of airflow, and comprises the input flow signal of the airflow sensing device adjusted by the flow correction factor determined by the signal processor.

Abstract: There is described a method for converting oripavine to hydromorphone or a physiologically acceptable salt thereof such as hydromorphone hydrochloride involving generation of 8,14-dihydrooripavine utilising diimine.

Abstract: A method for preparing dispersions of solid salts of fatty acids in low polarity liquids where a concentrated mixture of at least 50 percent of the solid salts of fatty acids in a low polarity liquid is subjected to high shearing forces, until the average particle size of the solid salts of fatty acids is less than 3 micron. The dispersion may then be diluted with the low polarity liquid to a lower concentration. The solid salt of the fatty acid is most preferably magnesium stearate, and the low polarity liquid is preferably a polydimethylsiloxane fluid having a viscosity of less than 100 centistoke (mm2/s).

Abstract: A method for preparing dispersions of solid salts of fatty acids in low polarity liquids where a concentrated mixture of at least 50 percent of the solid salts of fatty acids in a low polarity liquid is subjected to high shearing forces, until the average particle size of the solid salts of fatty acids is less than 3 micron. The dispersion may then be diluted with the low polarity liquid to a lower concentration. The solid salt of the fatty acid is most preferably magnesium stearate, and the low polarity liquid is preferably a polydimethylsiloxane fluid having a viscosity of less than 100 centistoke (mm2/s).

Abstract: The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen.

Abstract: A method of removing volatile siloxane oligomers from emulsions containing siloxane polymers. The method can be applied to any emulsion containing siloxane polymers, but it's especially adapted for removing residual volatile siloxane oligomers from emulsions containing siloxane polymers prepared by emulsion polymerization of the volatile siloxane oligomers. In particular, volatile siloxane oligomers are removed from emulsions containing siloxane polymers by pervaporation.

Abstract: Emulsions and microemulsions containing particles of siloxane polymers are prepared by an emulsion polymerization process involving (i) the formation of a mixture by combining a siloxane oligomer, an ionic surfactant, no nonionic surfactant, and water; (ii) agitating the mixture without using high shearing forces (homogenization) to form droplets of oligomer prior to polymerization that have an average diameter of greater than 10 micron/10,000 nanometer; (iii) adding a siloxane polymerization catalyst to the oligomer mixture; (iv) agitating the mixture without using high shearing forces; (v) polymerizing the oligomer to form new particles of polymer; and (vi) continuing step (v) until the polymer has increased in viscosity or molecular weight.

Abstract: A device for externally referenced ratiometric signal processing includes an external signal source and a control module. The external signal source has an external voltage reference supply for generating an external reference voltage and a gain & offset circuit for generating a signal voltage. The value of the signal voltage is varies so that the ratio of the signal voltage to the external reference voltage is proportional to the position of a transducer. The control module receives the signal voltage and the external voltage reference. The control module includes an analog to digital converter that converts the signal voltage to a digital signal. The digital signal is proportional to the ratio of the signal voltage to the external reference voltage. A microprocessor may then use the digital signal to infer the position of the transducer.

Abstract: A method for making oil free polysiloxane standard, fine and microemulsions using emulsion polymerization is disclosed. The method comprises reacting a cyclicsiloxane in the presence of a catalyst, ionic surfactant and nonionic surfactant within a certain operating window. Emulsions containing silicone copolymers can also be produced using the method of the instant invention.

Abstract: A mass flow sensor for measuring flow of a medium comprises a body, a membrane fixed on the body, a pair of thin film heating elements arranged on the membrane, and a sensing element arranged on the membrane adjacent the pair of heating elements and connected between the pair of heating elements. The heating elements are further arranged in a spaced relationship, transverse to the direction of medium flow such that one heating element is upstream of the other heating element in the medium flow. The sensing element provides an electrical signal for determining the voltage across the total series resistance of the heating elements which is indicative of the medium flow magnitude, and for determining the relative resistance of the upstream heating element compared to the downstream heating element which is indicative of medium flow direction. In another aspect of the invention a system for measuring flow of a medium is disclosed.

Abstract: Dialkyl sulfonic acid catalysts such as dialkyl benzene sulfonic acids, dialkyl naphthalene sulfonic acids, salts of dialkyl benzene sulfonic acids, and salts of dialkyl naphthalene sulfonic acids, are used to prepare emulsions containing particles of organopolysiloxanes having an average particle diameter in the emulsion of at least one micron (&mgr;m) A silanol endblocked siloxane is used as an oligomer and has the structure wherein R1 to R6 are alkyl or aryl groups such as methyl, ethyl, propyl, butyl, pentyl, hexyl, and phenyl; and n has a value such as to provide oligomers with a viscosity ranging from about 20 to about 100,000 centipoise (mPa·s). The emulsified oligomer is then polymerized with the catalyst to form an organopolysiloxane polymer having a viscosity which can be as high as about 10 million centipoise (mPa·s).

Abstract: A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.