Abstract: Mobile vibration isolation devices and methods for reducing vibration transfer to electrical or electronic devices are provided. One such mobile vibration isolation device includes an array of two or more vibration isolation elements, and one or more flexible elements. The array of vibration isolation elements is connected by said one or more flexible elements. Preferably, the vibration isolation elements have at least a portion thereof of a cross linked polymer foam. More preferably, the vibration isolation elements have at least a portion thereof of SORBOTHANE®. A method for reducing vibration transfer to electrical or electronic devices includes the steps of providing a mobile vibration isolation device, and interposing the mobile vibration isolation device between the electrical or electronic device and a vibrating surface, thereby reducing vibration transfer to the electrical or electronic device.

Abstract: A lamp (100) comprises an outer envelope (120) having first and second electrical lead-ins (140, 160) sealed into a base (180) of the envelope (120). A ceramic arc tube (200) is operatively mounted within the envelope (120), the arc tube (200) having at least one electrode (220) therein. A tubular, niobium feed-through (240) is connected to the at least one electrode (220) and sealed to the ceramic body (120) at a joint (260) that can comprise a glass frit (260a). A stainless steel rod (280) is electrically connected between the electrical lead-in (140) and the tubular niobium feed-through (240), the stainless steel rod (280) being the only electrical connection between the lead-in (140) and the niobium feed-through (240).

Abstract: A lamp (100) comprises an outer envelope (120) having first and second electrical lead-ins (140, 160) sealed into a base (180) of the envelope (120). A ceramic arc tube (200) is operatively mounted within the envelope (120), the arc tube (200) having at least one electrode (220) therein. A tubular, niobium feed-through (240) is connected to the at least one electrode (220) and sealed to the ceramic body (120) at a joint (260) that can comprise a glass frit (260a). A stainless steel rod (280) is electrically connected between the electrical lead-in (140) and the tubular niobium feed-through (240), the stainless steel rod (280) being the only electrical connection between the lead-in (140) and the niobium feed-through (240).

Abstract: This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.

Abstract: This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm3; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.

Abstract: A cured polyphenylene polymer having a glass transition temperature no greater than 465° C. An integrated circuit article having a fracture toughness as determined by the modified edge liftoff test of at least 0.3 MPa-m1/2.

Abstract: This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: Applicants found that selection of reactive nanoparticles as poragens when combined with monomeric precusors to organic, particularly polyarylene or polyarylene ether, matrix materials are effective in obtaining very small pore sizes.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Abstract: A cured polyphenylene polymer having a glass transition temperature no greater than 465° C. An integrated circuit article having a fracture toughness as determined by the modified edge liftoff test of at least 0.3 MPa-m1/2.

Abstract: This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.

Abstract: This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.