Abstract: A method to accurately classify defects on a semiconductor wafer wherein a scanning tool detects defects and assigns values to parameters that are characteristic of each defect. The values of the characteristic parameters represent a thumbprint of each defect and the defects are placed into "bins" according to the thumbprint of each defect. A sample of defects in each bin is analyzed and assigned a classification code.

Abstract: Methods of manufacturing semiconductor devices wherein a selected layer is implanted with heavy ions in a pattern having dimensions of a via structure to be formed in a first layer of interlayer dielectric. In a first embodiment, the ions are implanted in an etch stop layer formed between a first and second layer of interlayer dielectric. In a second embodiment, the ions are implanted in the second layer of interlayer dielectric. Selective etch processes form a trench structure in the second layer of interlayer dielectric and form a via structure in the first layer of interlayer dielectric. The via structure and trench structure are filled with a conductive material.

Abstract: A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.

Abstract: A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process.

Abstract: A defect management system with a method to identify and reclassify previously classified propagator defects. The defect management system also has a method of identifying cluster defects and selecting at least one cluster defect to classify.

Abstract: A vehicle communications system having a remote control unit installed in the interior of a vehicle and a display unit located on the exterior of the vehicle. The display unit has an input from the remote control unit and an input from a vehicle interface module that has inputs from the vehicle such as the braking system and the turning signal system. The remote control unit is controllable by the driver in the vehicle and has a table of preset and preprogrammed messages selectable by the driver. The driver selects a message to be displayed and sends the message to the display unit. Any input to the vehicle interface module from the vehicle signaling systems overrides the signal input from the remote control unit unless the display unit is mounted on the front of the vehicle. The driver can select a message from a table of messages that are sequentially displayed on the remote control unit. The table of messages is stored on a flash memory in the remote unit and in a flash memory in the display unit.

Abstract: A method of manufacturing semiconductor wafers using a simulation tool to determine predicted wafer electrical test measurements. The simulation tool combines in-line critical dimensions from previous from previous processes run on the current wafer lot, data from previous lots for processes subsequent to the process being run on the current lot and calibration simulation data obtained from the comparison of the predicted wafer electrical test measurements and collected wafer electrical test measurements taken from previous actual wafer electrical test measurements.

Abstract: A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process.

Abstract: A simplified fabrication procedure for making flash EEPROM memory cells is disclosed. The method comprises performing a double-diffuse (deep) junction implant after the shallow source/drain of the memory cell have been implanted and formed. A high energy double-diffuse implant is used to replace separate, individual implant and diffusion steps which results in a memory cell having, less damage to its substrate.