Abstract: Relatively simple partially or completely pressure balanced valves are disclosed having relatively low friction and gas forces to be overcome by a solenoid actuator. Various devices are provided for sealing of the valve members to maintain low leakage of gases through the valve or into the actuator. Movable members of the valve and actuator are engaged but physically separate so they may be separately replaced. Various actuators may by applied with various valve assemblies for flexibility in meeting the requirements of alternative applications.

Abstract: Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.

Abstract: The processing of a semiconductor body front side surface can be monitored in-situ, and thickness data for a body can be obtained ex-situ, by directing an infrared beam at the back side surface of the body. The light is reflected from front and back sides of a body portion to form primary and secondary reflections which are detected. An interference signal representative of interference fringes of the primary and secondary reflections is generated, and thickness data for the body or a body portion is calculated from the interference signal. In-situ monitoring of processes such as mechanical-chemical polishing, chemical vapor deposition, and plasma or reactive ion etching is achieved by providing a light passageway through a semiconductor body support such as a chuck or electrode, e.g., a cathode. In this manner, the process monitoring does not hinder, and is not hindered by, the processing steps and equipment.

Abstract: A nanolithographic method for forming fine features is disclosed. A carrier layer, such as a photoresist, is deposited on a substrate. A relatively large pattern is imposed on the carrier layer by means of conventional photolithographic methods. The carrier layer is then exposed to a maskless etch, such as by ashing in oxygen, such that non-volatile materials within the carrier layer aggregate along the center line of the pattern, forming a residual pattern of significantly reduced width when compared to the original carrier layer pattern.

Abstract: Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.

Abstract: A process for igniting a ultra-high frequency ion source using in a per se known manner, a resonator cavity supplied by a gas or a vapor of a material for forming a plasma, a system for injecting ultra-high frequency power into the cavity and a system for extracting ions of the plasma outside of the cavity, said process comprising the steps of forming the cavity to be of the multimode type, producing nucleating electrons within the medium to be ionized and preserving the plasma following its ignition solely by ultra-high frequency power. Apparatus for igniting an ultra-high frequency ion source using the process is also disclosed.

Abstract: An electron cyclotron resonance ion source in which a plasma is confined in a magnetic configuration having a first group of coils located in the plane defined by the tight window of an ultra-high frequency injector and surrounding the latter, supplying the magnetic field creating and confining a plasma as well as a second group of coils supplied in counter-field compared with the first group and surrounding an ion extraction system. Ion extraction takes place in a magnetic field well below that corresponding to the cyclotron resonance. This ion source has numerous applications in the field of thin layer sputtering, microetching, ion implantation, accelerators, etc.

Abstract: A playback device for disc-shaped record carriers containing video signals stored in the grooves thereof which includes an arrangement which, in response to an applied power pulse, displaces the pickup, during playback, by a number of groove widths transversely to the direction of the groove.