Patents by Inventor Paul M. Enquist

Paul M. Enquist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190244899
    Abstract: A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 8, 2019
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, JR., Javier A. DeLaCruz
  • Publication number: 20190237419
    Abstract: A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventor: Paul M. ENQUIST
  • Patent number: 10366962
    Abstract: A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: July 30, 2019
    Assignee: Invensas Bonding Technologies, Inc.
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, Jr.
  • Patent number: 10312217
    Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: June 4, 2019
    Assignee: Invensas Bonding Technologies, Inc.
    Inventors: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist
  • Publication number: 20190148222
    Abstract: A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.
    Type: Application
    Filed: November 30, 2018
    Publication date: May 16, 2019
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, JR., Qin-Yi Tong
  • Patent number: 10269708
    Abstract: A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: April 23, 2019
    Assignee: Invensas Bonding Technologies, Inc.
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, Jr., Javier A. DeLaCruz
  • Publication number: 20190115247
    Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
    Type: Application
    Filed: November 21, 2018
    Publication date: April 18, 2019
    Inventors: Qin-Yi Tong, Paul M. Enquist, Anthony Scot Rose
  • Patent number: 10262963
    Abstract: A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: April 16, 2019
    Assignee: Invensas Bonding Technologies, Inc.
    Inventor: Paul M. Enquist
  • Patent number: 10147641
    Abstract: A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: December 4, 2018
    Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, Jr., Qin-Yi Tong
  • Patent number: 10141218
    Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: November 27, 2018
    Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
    Inventors: Qin-Yi Tong, Paul M. Enquist, Anthony Scot Rose
  • Publication number: 20180331000
    Abstract: Representative implementations of devices and techniques provide a temporary access point (e.g., for testing, programming, etc.) for a targeted interconnect located among multiple finely spaced interconnects on a surface of a microelectronic component. One or more sacrificial layers are disposed on the surface of the microelectronic component, overlaying the multiple interconnects. An insulating layer is disposed between a conductive layer and the surface, and includes a conductive via through the insulating layer that electrically couples the conductive layer to the target interconnect. The sacrificial layers are configured to be removed after the target interconnect has been accessed, without damaging the surface of the microelectronic component.
    Type: Application
    Filed: December 11, 2017
    Publication date: November 15, 2018
    Inventors: Javier A. DELACRUZ, Paul M. ENQUIST, Gaius Gillman FOUNTAIN, JR., Ilyas MOHAMMED
  • Publication number: 20180226371
    Abstract: A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
    Type: Application
    Filed: April 6, 2018
    Publication date: August 9, 2018
    Inventor: Paul M. ENQUIST
  • Publication number: 20180226375
    Abstract: A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.
    Type: Application
    Filed: December 20, 2017
    Publication date: August 9, 2018
    Inventors: Paul M. Enquist, Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram
  • Publication number: 20180204798
    Abstract: A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
    Type: Application
    Filed: December 22, 2017
    Publication date: July 19, 2018
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, JR., Javier A. DeLaCruz
  • Patent number: 9953941
    Abstract: A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: April 24, 2018
    Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
    Inventor: Paul M. Enquist
  • Patent number: 9852988
    Abstract: A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: December 26, 2017
    Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, Jr., Javier A. DeLaCruz
  • Publication number: 20170316971
    Abstract: A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.
    Type: Application
    Filed: July 18, 2017
    Publication date: November 2, 2017
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, JR., Qin-Yi Tong
  • Publication number: 20170301656
    Abstract: A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.
    Type: Application
    Filed: June 30, 2017
    Publication date: October 19, 2017
    Inventors: Paul M. Enquist, Gaius Gillman Fountain
  • Patent number: 9716033
    Abstract: A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface. Alternatively, first and/or second contact structures are not exposed at bonding, and a via is etched and filled after bonding to electrically interconnect first and second contact structures and provide electrical access to interconnected first and second contact structure to a surface.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: July 25, 2017
    Assignee: ZIPTRONIX, INC.
    Inventors: Paul M. Enquist, Gaius Gillman Fountain, Jr., Qin-Yi Tong
  • Publication number: 20170200711
    Abstract: Systems and methods for efficient transfer of elements are disclosed. A film which supports a plurality of diced integrated device dies can be provided. The plurality of diced integrated device dies can be disposed adjacent one another along a surface of the film. The film can be positioned adjacent the support structure such that the surface of the film faces a support surface of the support structure. The film can be selectively positioned laterally relative to the support structure such that a selected first die is aligned with a first location of the support structure. A force can be applied in a direction nonparallel to the surface of the film to cause the selected first die to be directly transferred from the film to the support structure.
    Type: Application
    Filed: December 22, 2016
    Publication date: July 13, 2017
    Inventors: Cyprian Emeka Uzoh, Paul M. Enquist, Gaius Gillman Fountain, JR.