Abstract: A method for obtaining and analyzing information objects including generating, collecting or discovering information objects. The information objects are signified at least in part using deliberately ambiguated signifier prompts, for example, linear scale opposing negatives or positives, and/or multi-dimensional signifier prompts. The information objects may comprise text or non-text fragments, and may be generated or selected. The responses to the signifier prompts are stored with the fragments to provide a dataset of signified fragments. The signified fragments may be analyzed based on the signifiers and can be utilized as part of an explorable knowledge repository, or objective measures can be created to aid in mass opinion capture or human attitude auditing. The fragments may be represented on a graphical template.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

Abstract: Apparatus and method for thermally controlled processing of microelectronic workpieces with liquids. An apparatus in accordance with and embodiment of the invention includes a process vessel configured to carry a processing liquid, such as an electroless processing liquid. The vessel has a thermally transmissive wall for transferring heat to and/or from the processing liquid within. A heat transfer device, such as a reservoir that receives processing liquid spilling over from the process vessel, transfers heat to or from the processing liquid within the process vessel. The heat transfer device can also transfer heat to or from an internal or external heat source, such as a conduit carrying a heat transfer fluid, or an electrical resistance heater.

Abstract: Reactors, systems and methods for electroplating and/or electro-etching microfeature workpieces. Reactors in accordance with the invention have a first chamber configured to direct a first processing solution to a processing zone, a second chamber configured to contain a second processing solution different than the first processing solution, and an ion exchange membrane between the first chamber and the second chamber. The reactors also include (a) a support member in the first chamber that contacts the ion exchange membrane across the surface of the membrane, and (b) a counter electrode in the second chamber. The ion exchange membrane enables a low conductivity catholyte to be used in the first chamber and an inert counter electrode in the second chamber.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: Reactors with agitators and methods for processing microfeature workpieces with such reactors. The agitators are capable of obtaining high, controlled mass-transfer rates that result in high quality surfaces and efficient wet chemical processes. The agitators generate high flow velocities in the fluid and contain the high energy fluid proximate to the surface of the workpiece to form high quality surfaces when cleaning, etching and/or depositing materials to/from a workpiece. The agitators also have short stroke lengths so that the footprints of the reactors are relatively small. As a result, the reactors are efficient and cost effective to operate. The agitators are also designed so that electrical fields in the processing solution can effectively operate at the surface of the workpiece.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: The present invention provides a semiconductor workpiece support and contact assembly for providing localized electrical connections with the device side of the workpiece. The additional contact points help overcome the terminal effect caused by very high sheet resistance of thin barrier layers and enable plating a conformal seed layer or feature filling directly on thin barrier layers. By utilizing the streets that separate individual dice on a workpiece to make electrical connections with the workpiece and provide localized distribution of plating chemistry, the present invention provides a more uniform and conformal metallization layer.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.