Abstract: The present disclosure provides a method of removing a target substance from blood of a patient, the method comprising steps of: providing a complexing agent, especially a supra-molecular compound or core particle, adapted for selectively binding a target molecule or target entity in the blood of the patient in a complex, e.g. a supra-molecular complex; administering the complexing agent into the patient's blood, preferably into an extracorporeal blood flow pathway, for binding with the target molecule or the target entity; conveying the blood having the complexing agent through a treatment zone of an extracorporeal blood flow pathway for a predetermined period of time to bind or incorporate the target molecule or target entity within the blood in a complex, such as a supra-molecular complex; and removing the complex (e.g. supra-molecular complex) from the blood by haemodialysis, which preferably includes one or more of filtration, ultrafiltration, convection, or adsorption.

Abstract: The present invention provides an implantable medical device (10), such as a neural implant, a neural stimulator, a pacemaker, a defibrillator, a glucometer or a drug pump. The device (10) includes a battery (B) providing a supply of electric power for operation of the device, and a system (1) for thermoelectric charging or re-charging of the battery (B). The system (1) includes a field-sensitive component (2) configured and/or adapted for transducing a field of magnetic energy, microwave energy, ultrasound energy, and/or X-ray energy into heat; and a thermoelectric module (4) arranged and/or connected to interface with the field-sensitive component (2) for generating an electric potential from the heat transduced by the field-sensitive component (2). The thermoelectric module (4) is arranged in electrical connection with the battery (B) for applying the electric potential to the battery (B).

Abstract: A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

Abstract: A radial line slot antenna (RLSA) is described for generating plasma during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

Abstract: A microwave plasma processing apparatus (100) of a slot antenna type includes a plane antenna plate (31) constituting a flat waveguide and a cover (34) of a conductive member. The cover (34) is provided with a stub (43) as a second waveguide for adjusting electric field-distribution in the flat waveguide. The stub (43) is provided in the cover (34) of the conductive member. In plan view, the stub (43) is arranged to overlap slots (32) constituting a slot pair arranged at the outermost circumference of the plane antenna plate (31). By appropriately arranging the stub, it is possible to control electric field-distribution in the flat waveguide thereby to generate a uniform plasma.

Abstract: An apparatus for controlling the temperature of a substrate which includes a substrate table and a thermal assembly arranged in the substrate table and in thermal communication with a thermal surface of the substrate table. The thermal assembly includes a channel that carries a heat-transfer fluid. The apparatus further includes a fluid thermal unit which includes a first fluid unit configured to control the temperature of the heat-transfer fluid to a first temperature, a second fluid unit configured to control the temperature of the heat-transfer fluid to a second temperature, and an outlet flow control unit that is in fluid communication with the channel of the thermal assembly and the first and second fluid units. The outlet flow control unit is configured to supply the channel with a controlled heat transfer fluid, which includes at least one of the heat-transfer fluid having a first temperature, the heat transfer fluid having a second temperature or a combination thereof.

Abstract: A radial line slot antenna (RLSA) is described for generating plasma during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

Abstract: A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: An apparatus for measuring plasma density of a plasma processing reactor, comprises a stationary compact probe having a short dielectric cap with a short coaxial cable inserted therein and having an open metal antenna tip. The probe can be utilized to determine resonant plasma frequency near its tip location. Two or more of such probes can be used to determine three dimensional plasma density distribution inside the plasma processing reactor.

Abstract: An apparatus for measuring plasma density of a plasma processing reactor, comprises a probe having a dielectric tube with a coaxial cable inserted therein. The coaxial cable has an open antenna tip, distance constancy is kept between the antenna tip and the dielectric tube despite varying thermal conditions. The probe can be utilized to determine resonant plasma frequency near its tip location and the corresponding plasma density.

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface.

Abstract: Embodiments of an intelligent modeling method and system monitor and perform analysis of semiconductor processing equipment as well as predict future states of that equipment based on the analysis, predict failures of the semiconductor processing equipment and/or determine equipment maintenance schedules.

Abstract: The present invention presents a method and apparatus for reducing charging damage to a substrate is described. In particular, a method of operating a plasma processing system is described that leads to the removal of, or significant reduction of, the accumulated charge on the substrate.

Abstract: An apparatus determines how well a semiconductor wafer (4) is clamped to a support member (1). The apparatus has at least one ultrasonic transducer (2a,2b,2c,2d) configured to emit ultrasonic energy (3) toward an interface between the water (4) and the support member (1) so that the interface generates echo signals, and a data processing unit (11) configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer (4) is clamped to the support member (1before semiconductor process is started. A first method ensures that a wafer (4) is securely clamped to a support member before a semiconductor process is started. A second method verifies proper de-clamping of a semiconductor wafer (4) from a support member (1) before the semiconductor wafer (4) is removed from the support member (1) upon completion of a semiconductor process.

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condidtion, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.