Abstract: A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.

Abstract: A method and system are provided for rapid temperature profile control of the upper surface of a substrate holder providing a specified uniformity or specified non-uniformity of the temperature profile on that surface. The substrate holder includes a first fluid channel positioned in a first thermal zone, utilizing a heat transfer fluid at a specified flow rate and at a specified temperature, to control the temperature profile of the first thermal zone of the surface of the substrate holder. A second fluid channel positioned in a second thermal zone of the substrate holder, utilizing a heat transfer fluid at a specified flow rate and at a specified temperature, is configured to control the temperature profile of the second thermal zone of the surface of the substrate holder.

Abstract: A substrate holder for supporting a substrate, including an exterior supporting surface, a cooling component, a heating component positioned adjacent to the supporting surface and between the supporting surface and the cooling component, and a contact volume positioned between the heating component and the cooling component, and formed by a first internal surface and a second internal surface. The thermal conductivity between the heating component and the cooling component is increased when the contact volume is provided with a fluid.

Abstract: An apparatus for controlling the temperature of a substrate which includes a substrate table and a thermal assembly arranged in the substrate table and in thermal communication with a thermal surface of the substrate table. The thermal assembly includes a channel that carries a heat-transfer fluid. The apparatus further includes a fluid thermal unit which includes a first fluid unit configured to control the temperature of the heat-transfer fluid to a first temperature, a second fluid unit configured to control the temperature of the heat-transfer fluid to a second temperature, and an outlet flow control unit that is in fluid communication with the channel of the thermal assembly and the first and second fluid units. The outlet flow control unit is configured to supply the channel with a controlled heat transfer fluid, which includes at least one of the heat-transfer fluid having a first temperature, the heat transfer fluid having a second temperature or a combination thereof.

Abstract: An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface.

Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Abstract: A substrate holder for supporting a substrate, including an exterior supporting surface, a cooling component, a heating component positioned adjacent to the supporting surface and between the supporting surface and the cooling component, and a contact volume positioned between the heating component and the cooling component, and formed by a first internal surface and a second internal surface. The thermal conductivity between the heating component and the cooling component is increased when the contact volume is provided with a fluid.

Abstract: The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A hybrid plasma processing apparatus simultaneously utilises capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources in a way that operation of the CCP source compliments operation of the ICP source in a most positive way, so the interference between these very different types of sources, a CCP plasma source and an ICP plasma source, is removed, while essential benefits of each of them are positively combined in a single apparatus. This hybrid plasma processing apparatus allows reaching higher plasma density and with higher efficiency than that possible in traditional CCP sources, while the plasma volume, residence time, and the plasma and process non-uniformity are significantly reduced in comparison with that typical for traditional ICP sources.

Abstract: An apparatus determines how well a semiconductor wafer (4) is clamped to a support member (1). The apparatus has at least one ultrasonic transducer (2a,2b,2c,2d) configured to emit ultrasonic energy (3) toward an interface between the wafer (4) and the support member (1) so that the interface generates echo signals, and a data processing unit (11) configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer (4) is clamped to the support member (1) before semiconductor process is started. A first method ensures that a wafer (4) is securely clamped to a support member before a semiconductor process is started.A second method verifies proper de-clamping of a semiconductor wafer (4) from a support member (1) before the semiconductor wafer (4) is removed from the support member (1) upon completion of a semiconductor process.

Abstract: The present invention presents a method and apparatus for reducing charging damage to a substrate is described. In particular, a method of operating a plasma processing system is described that leads to the removal of, or significant reduction of, the accumulated charge on the substrate.

Abstract: A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region.

Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Abstract: The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

Abstract: A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region.