Abstract: The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor—which may be in a central location, or symmetrically distributed—one or more sense transistors are formed from an isolated portion of either a drain or source structure.

Abstract: An apparatus and method for producing an output reference voltage is provided. A voltage divider is configured to provide the output reference voltage from a bandgap reference voltage. The bandgap reference voltage is applied across a biased portion of the voltage divider. Additionally, a second-order temperature coefficient (TC) of the impedance of a controllable portion of the voltage divider is adjusted in response to a second-order trim signal. The first and zeroth order TCs of the controllable portion of the voltage divider are substantially independent of the second-order trim signal. In one embodiment, the controllable portion includes a resistor digital-to-analog converter (DAC) that is responsive to the second-order trim signal. The resistor DAC includes at least two different types of resistors. The second-order TCs of the two different types of resistors are substantially different.

Abstract: The present invention is related to glitch reduction of the output of an auto-zero amplifier. The auto-zero amplifier may be used in a voltage regulator, and the glitch reduction in the auto-zero amplifier will result in reduced output ripple. The auto-zero amplifier stores an input offset during an auto-zero phase, so that the input offset can be corrected during an amplification phase. During the amplification phase, the gate-drain voltage of a first transistor is sampled onto a capacitor. During the auto-zero phase, the capacitor is used to maintain the same voltage across the gate-drain voltage of the first transistor that was present during the amplification phase. The capacitor maintains the gate-drain voltage during the auto-zero phase in order to compensate for the large step in voltage that would otherwise occur.