Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.

Abstract: A battery comprising an anode comprising anode material in contact with a metal anode current collector. The battery further comprises a cathode comprising cathode material in contact with a cathode current collector comprising a transparent conducting oxide (TCO). The battery further comprises an electrolyte with a pH in a range of 3 to 7.

Abstract: After forming a first electromagnetic radiation blocking layer over a front side of a device wafer, the device wafer is bonded to a handle substrate from the front side. A semiconductor substrate in the device wafer is thinned from its backside. Trenches are formed extending through the device wafer and the first electromagnetic radiation blocking layer such that the device wafer is singulated into semiconductor dies. A second electromagnetic radiation blocking layer portion is formed on a backside surface of and sidewalls surfaces of each of the semiconductor dies such that each of the semiconductor dies are fully encapsulated by the first and second electromagnetic radiation blocking layer portions.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: After forming a first electromagnetic radiation blocking layer over a front side of a device wafer, the device wafer is bonded to a handle substrate from the front side. A semiconductor substrate in the device wafer is thinned from its backside. Trenches are formed extending through the device wafer and the first electromagnetic radiation blocking layer such that the device wafer is singulated into semiconductor dies. A second electromagnetic radiation blocking layer portion is formed on a backside surface of and sidewalls surfaces of each of the semiconductor dies such that each of the semiconductor dies are fully encapsulated by the first and second electromagnetic radiation blocking layer portions.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A method comprises forming a structure, the structure comprising at least one of a wafer, a panel and a roll to roll structure and forming a plurality of integrated circuit chips from the structure. At least a given one of the plurality of integrated circuit chips or a heterogeneous integrated sub-component thereof forms a smart tag comprising a processor, a non-volatile memory, an internal power source, and a transceiver configured for two-way communication with a reader external to the smart tag. The given integrated circuit chip less than 10 cubic millimeters in size.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

Abstract: A micro-battery is provided in which a metallic sealing layer is used to provide a hermetic seal between an anode side of the micro-battery and the cathode side of the micro-battery. In accordance with the present application, the metallic sealing layer is formed around a perimeter of each metallic anode structure located on the anode side and then the metallic sealing layer is bonded to a solderable metal layer of a wall structure present on the cathode side. The wall structure contains a cavity that exposes a metallic current collector structure, the cavity is filled with battery materials.

Abstract: A battery comprising an anode comprising anode material in contact with a metal anode current collector. The battery further comprises a cathode comprising cathode material in contact with a cathode current collector comprising a transparent conducting oxide (TCO). The battery further comprises an electrolyte with a pH in a range of 3 to 7.

Abstract: A microbattery structure for hermetically sealed microbatteries is provided. In one embodiment, the microbattery structure includes a first silicon substrate containing at least one pedestal which houses a cathode material of a microbattery and at least one depression which houses A FIRST sealant material of the microbattery. The structure further includes a second silicon substrate containing at least one pedestal which houses an anode material of the microbattery and at least one depression which houses a second sealant material of the microbattery. An insulated centerpiece is bonded to the first sealant material present in at least two depressions on the first silicon substrate. An interlock structure is formed by aligning and superimposing the second silicon substrate on the first silicon substrate in a mortise and tenon fashion and sealing the two substrates using a high force.

Abstract: Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.

Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.

Abstract: A micro-battery is provided in which a metallic sealing layer is used to provide a hermetic seal between an anode side of the micro-battery and the cathode side of the micro-battery. In accordance with the present application, the metallic sealing layer is formed around a perimeter of each metallic anode structure located on the anode side and then the metallic sealing layer is bonded to a solderable metal layer of a wall structure present on the cathode side. The wall structure contains a cavity that exposes a metallic current collector structure, the cavity is filled with battery materials.

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.