Abstract: A capacitor structure is formed on a substrate member having one or more via holes therein. Metallization portions within the via holes of the substrate member form part of the plates of the capacitor.

Abstract: An apparatus for fabricating encapsulated micro-channels in a substrate is described. The apparatus includes the formation of a thin film layer over an area of a substrate. Following the formation of the thin layer, a periodic array of access windows are formed within the thin film layer along dimensions of one or more desired micro-channels. Following formation of the access windows, the one or more micro-channels are formed within an underlying layer of the substrate. Finally, the one or more micro-channels are encapsulated, thereby closing the one or more access windows along the dimensions of the desired micro-channels. Accordingly, the apparatus is suitable in one context for rapid prototyping of micro-electromechanical systems in the areas of, for example, RF micro-systems, fluidic micro-systems and bio-fluidic applications. In addition, the apparatus enables the rapid prototyping of integrated circuits.

Abstract: A method and apparatus for rapid prototyping and fabrication of passivated microfluidic structures is disclosed. The method and apparatus may be used to fabricate and passivate the microfluidic channel in one system.

Abstract: A method and apparatus for fabricating encapsulated micro-channels in a substrate is described. The method includes the formation of a thin film layer over an area of a substrate. Following the formation of the thin layer, a periodic array of access windows are formed within the thin film layer along dimensions of one or more desired micro-channels. Following formation of the access windows, the one or more micro-channels are formed within an underlying layer of the substrate. Finally, the one or more micro-channels are encapsulated, thereby closing the one or more access windows along the dimensions of the desired micro-channels. Accordingly, the method is suitable in one context for rapid prototyping of micro-electromechanical systems in the areas of, for example, RF micro-systems, fluidic micro-systems and bio-fluidic applications. In addition, the method enables the rapid prototyping of integrated circuits.

Abstract: A backside interconnect structure is used to deliver power through the substrate to the front side of an integrated circuit. One or more power planes are formed on the backside of the substrate and coupled to power nodes on the front side by deep vias in the substrate. In a specific embodiment of the invention, power planes are coupled through the substrate to front side metal lines, well taps and external connection points. Placing power planes on the opposite side of the substrate from the signal interconnects allows the use of low dielectric constant materials between signal lines, while using high dielectric constant materials between power planes thus increasing decoupling capacitance without increasing parasitic capacitance between signal lines.

Abstract: A capacitor structure is formed on a substrate member having one or more via holes therein. Metallization portions within the via holes of the substrate member form part of the plates of the capacitor.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A method of making circuit edit structures through the backside of a flip-chip packaged integrated circuit die. In one embodiment, a circuit edit is achieved by exposing first and second circuit edit connection targets through a semiconductor substrate of the integrated circuit die from the backside. Next, a polyimide layer is vapor deposited over the first and second circuit edit connection targets and the exposed semiconductor substrate. Next, the circuit edit connection targets are re-exposed through the polyimide layer and a conductor is deposited over the re-exposed circuit edit connection targets and the deposited polyimide layer from the backside of the integrated circuit to couple together the circuit edit connection targets. The polyimide layer may acts as both an insulation layer and an anti-reflective coating layer.

Abstract: In one embodiment, the present invention includes a method including the following acts. A light source is scanned over a surface of an integrated circuit. A photo-induced current is measured from a fiducial in the integrated circuit. The current is correlated to a position of the light source as the scanning progresses.

Abstract: In one embodiment, the present invention includes a method including the following acts. A light source is scanned over a surface of an integrated circuit. A photo-induced current is measured from a fiducial in the integrated circuit. The current is correlated to a position of the light source as the scanning progresses.

Abstract: A backside interconnect structure is used to deliver power through the substrate to the front side of an integrated circuit. One or more power planes are formed on the backside of the substrate and coupled to power nodes on the front side by deep vias in the substrate. In a specific embodiment of the invention, power planes are coupled through the substrate to front side metal lines, well taps and external connection points. Placing power planes on the opposite side of the substrate from the signal interconnects allows the use of low dielectric constant materials between signal lines, while using high dielectric constant materials between power planes thus increasing decoupling capacitance without increasing parasitic capacitance between signal lines.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A backside interconnect structure is used to deliver power through the substrate to the front side of an integrated circuit. One or more power planes are formed on the backside of the substrate and coupled to power nodes on the front side by deep vias in the substrate. In a specific embodiment of the invention, power planes are coupled through the substrate to front side metal lines, well taps and external connection points. Placing power planes on the opposite side of the substrate from the signal interconnects allows the use of low dielectric constant materials between signal lines, while using high dielectric constant materials between power planes thus increasing decoupling capacitance without increasing parasitic capacitance between signal lines.

Abstract: A method and an apparatus for displaying information such as an image with an integrated circuit. In one embodiment, a two-dimensional array of infra red light emitting diodes are disposed on a front side of a flip-chip mounted integrated circuit. The infra red light produced by each one of the light emitting diodes travels from the front side of the integrated circuit through the semiconductor substrate to the back side of the integrated circuit. A plurality of up-converting phosphors are patterned on the back side of the integrated circuit to up-convert the infra red light to visible light. In one embodiment, the up-converting phosphors up-convert the infra red light to red, green and blue visible light to produce a color display, viewable from the back side of the flip-chip mounted integrated circuit.

Abstract: A flip-chip having a decoupling capacitor electrically coupled to the backside thereof. The flip-chip includes a semiconductor substrate having first and second opposing surfaces with circuit elements formed within the first surface. A plurality of raised bump contacts are located on the first surface and connected to the circuit elements. A plurality of electrical interconnects are also located on or within the second surface and connected to the circuit elements. The electrodes of a decoupling capacitor are electrically coupled to the plurality of electrical interconnects.

Abstract: A method of making circuit edit structures through the backside of a flip-chip packaged integrated circuit die. In one embodiment, a circuit edit is achieved by exposing first and second circuit edit connection targets through a semiconductor substrate of the integrated circuit die from the backside. Next, a polyimide layer is vapor deposited over the first and second circuit edit connection targets and the exposed semiconductor substrate. Next, the circuit edit connection targets are re-exposed through the polyimide layer and a conductor is deposited over the re-exposed circuit edit connection targets and the deposited polyimide layer from the backside of the integrated circuit to couple together the circuit edit connection targets. The polyimide layer may act as both an insulation layer and an anti-reflective coating layer.

Abstract: A method and an apparatus for editing an integrated circuit. In one embodiment, an integrated circuit substrate is placed into a laser chemical vapor deposition (LCVD) tool and a conductive metal film is deposited onto the integrated circuit substrate over an area of interest. The integrated circuit substrate is subsequently placed into a focused ion beam (FIB) tool where an optional FIB cleaning step is performed on the conductive element deposited by the LCVD tool to help ensure that a good electrical contact can be made. The FIB tool is also used to introduce any desired cuts into signal lines of the integrated circuit to complete edits. The FIB is also used to remove passivation over integrated circuit nodes of interest to expose buried metal lines for subsequent coupling to the conductive element deposited with the LCVD tool.

Abstract: An apparatus is disclosed. In one embodiment, the apparatus includes a semiconductor substrate and a second substrate. The semiconductor substrate has a top side and a bottom side. The semiconductor substrate has an integrated circuit and at least one alignment fiducial formed on the top side. The alignment fudicial is aligned with the integrated circuit and the alignment fiducial is accessible from the bottom side. The semiconductor substrate further includes a first set of bond pads on the integrated circuit, the bond pads on the top side. The second substrate has a second set of bond pads corresponding to the first set of bond pads. The semiconductor substrate is coupled to the second substrate at a plurality of solder interconnections disposed between the first and the second set of bond pads.

Abstract: A fiducial for aligning an integrated circuit die. In one embodiment, the fiducial is configured to be exposed by laser chemical etching through a silicon substrate through the back side of a C4 packaged integrated circuit die. The presently described fiducial includes floating diffusion regions disposed in the substrate. An oxide layer free of metal contacts is disposed over the diffusion regions within the fiducial region of the integrated circuit. A metal pattern layer is disposed beneath the oxide layer to provide alignment information. The metal pattern layer is configured to be visible through the oxide layer after the silicon substrate has been removed from the fiducial region. A light block is disposed between the metal pattern layer and an underlying epoxy underfill layer to minimize the risk of an excessive amount of light from being exposed to the underlying epoxy layer, which minimizes the risk of the epoxy layer from damaging the integrated circuit from excessive light exposure.

Abstract: A method and an apparatus providing a mechanical probe structure through the back side of an integrated circuit die. In one embodiment, semiconductor substrate is thinned from the back side of the integrated circuit die above a probe target. The probe target is then exposed and a thin insulating layer is formed over the exposed probe target and the nearby semiconductor substrate. The thin insulating layer provides electrical isolation between the exposed probe target and the bulk semiconductor substrate. The thin insulating layer also provides a base insulating platform for a probe pad that is subsequently deposited. After the insulating layer is formed over the exposed probe target and the nearby semiconductor substrate, the probe target is re-exposed through insulating layer such that a probe pad may be deposited over the probe target to provide electrical contact to the original probe target as well as provide a probe pad for mechanical probing purposes from the back side of the integrated circuit die.