Abstract: An extreme ultraviolet (EUV) mask and method of forming an EUV mask are provided. The method includes forming a mask layer on a semiconductor wafer, generating extreme ultraviolet (EUV) light by a lithography exposure system, forming patterned EUV light by patterning the EUV light by a mask including an absorber having extinction coefficient at an EUV wavelength that exceeds extinction coefficients of TaBN and TaN at the EUV wavelength, and exposing the mask layer by the patterned EUV light.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: A pellicle comprising a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a network of a plurality of carbon nanotubes. At least one carbon nanotube of the plurality of carbon nanotubes is surrounded by a multilayer protective coating that includes a stress control layer and a hydrogen permeation barrier layer over the stress control layer. The stress control layer and the hydrogen permeation barrier layer independently include an Me-containing nitride or an Me-containing oxynitride with Me selected from the group consisting of Si, Ti, Y, Hf, Zr, Zn, Mo, Cr and combinations thereof. The Me-containing nitride or the Me-containing oxynitride in the stress control layer has a first Me concentration, and the Me-containing nitride or the Me-containing oxynitride in the hydrogen permeation barrier layer has a second Me concentration less than the first Me concentration.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a process chamber. A target substrate is supported in the process chamber. A grid is positioned in the process chamber above the target substrate. The grid includes a plurality of apertures extending from a first side of the grid to a second side of the grid. During a PEALD process, a plasma generator generates a plasma. The energy of the plasma is reduced by passing the plasma through the apertures in the grid prior to reacting the plasma with the target substrate.

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween to include a reticle, and a layer of elastomer or gelatinous material disposed on at least one of the first surface and the second surface, wherein the layer of elastomer or gelatinous material is disposed between the base and the cover and contacts either the base or the cover.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween to include a reticle, and a layer of elastomer or gelatinous material disposed on at least one of the first surface and the second surface, wherein the layer of elastomer or gelatinous material is disposed between the base and the cover and contacts either the base or the cover.

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transfer the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, promoting formation of bundles of nanotubes from the individual CNTs in a second zone of the reactor downstream of the first reaction zone. The bundled CNTs are then collected on the filter membrane.

Abstract: A pellicle for an EUV photo mask includes a membrane attached to a frame. The membrane includes nanotubes, Ru—O—X catalyst structures partially covering a surface of each nanotube, and a protection layer to cover the Ru—O—X catalyst structures and the surface of each nanotube. X is a metal element of Mo, Ti, Zr or Nb. The Ru—O—X catalyst structures include first nano-particles of a X-containing material formed on the surface of each nanotube, and second nano-particles of a Ru-containing material formed on the first nano-particles, thereby forming catalysts or catalyst bridges. The pellicle advantageously has high EUV light transmittance and improved endurance against attacking particles (such as hydrogen particles), thereby having prolonged lifetime.

Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.