Abstract: A method for forming a semiconductor structure includes following operations. A hybrid layered structure is formed. The hybrid layered structure includes at least a 2D material layer and a first 3D material layer. Portions of the hybrid layered structure are removed to form a plurality of conductive features and at least an opening between the conductive features. A dielectric material is formed to fill the opening and to form an air gap sealed within.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate. A first conductive feature is over the substrate. A second conductive feature is over the substrate and is adjacent to the first conductive feature. The first and second conductive features are separated by a cavity. A dielectric liner extends from the first conductive feature to the second conductive feature along a bottom of the cavity and further extends along opposing sidewalls of the first and second conductive features. A dielectric cap covers and seals the cavity. The dielectric cap has a top surface that is approximately planar with top surfaces of the first and second conductive features. The first conductive feature and the second conductive feature comprise graphene intercalated with one or more metals.

Abstract: Vias and methods of making the same. The vias including a middle portion located in a via opening in an interconnect-level dielectric layer, a top portion including a top head that extends above the via opening and extends laterally beyond upper edges of the via opening and a bottom portion including a bottom head that extends below the via opening and extends laterally beyond lower edges of the via opening. The via may be formed from a refractory material.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower dielectric arranged over a substrate. An interconnect wire is arranged over the dielectric layer, and a first interconnect dielectric layer is arranged outer sidewalls of the interconnect wire. A protection liner that includes graphene is arranged directly on the outer sidewalls of the interconnect wire and on a top surface of the interconnect wire. The integrated chip further includes a first etch stop layer arranged directly on upper surfaces of the first interconnect dielectric layer, and a second interconnect dielectric layer arranged over the first interconnect dielectric layer and the interconnect wire. Further, an interconnect via extends through the second interconnect dielectric layer, is arranged directly over the protection liner, and is electrically coupled to the interconnect wire.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower dielectric arranged over a substrate. An interconnect wire is arranged over the dielectric layer, and a first interconnect dielectric layer is arranged outer sidewalls of the interconnect wire. A protection liner that includes graphene is arranged directly on the outer sidewalls of the interconnect wire and on a top surface of the interconnect wire. The integrated chip further includes a first etch stop layer arranged directly on upper surfaces of the first interconnect dielectric layer, and a second interconnect dielectric layer arranged over the first interconnect dielectric layer and the interconnect wire. Further, an interconnect via extends through the second interconnect dielectric layer, is arranged directly over the protection liner, and is electrically coupled to the interconnect wire.

Abstract: A semiconductor structure includes a substrate, a plurality of conductive features disposed over the substrate, and an isolation structure between conductive features and separating the conductive features from each other. Each of the conductive features includes a first metal layer and a 2D material layer. Another semiconductor structure includes a first conductive feature, a dielectric structure over the first conductive feature, a second conductive feature in the dielectric structure and coupled to the first conductive feature, and a conductive line over and coupled to the second conductive feature. In some embodiments, the conductive line includes a first 3D material layer, a first 2D material layer, and a second 3D material layer. The first 2D material layer is disposed between the first 3D material layer and the second 3D material layer.

Abstract: A method of operating an illuminator and apparatus thereof are proposed. A method includes: directing a radiation beam to the illuminator comprising slit fingers; sensing a temperature value of each of the slit fingers; determining a shifting value of the respective slit finger based on the temperature value; causing the respective slit finger to move according to the shifting value to form a light slit from the radiation beam; and exposing a workpiece using the light slit.

Abstract: A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower dielectric arranged over a substrate. An interconnect wire is arranged over the dielectric layer, and a first interconnect dielectric layer is arranged outer sidewalls of the interconnect wire. A protection liner that includes graphene is arranged directly on the outer sidewalls of the interconnect wire and on a top surface of the interconnect wire. The integrated chip further includes a first etch stop layer arranged directly on upper surfaces of the first interconnect dielectric layer, and a second interconnect dielectric layer arranged over the first interconnect dielectric layer and the interconnect wire. Further, an interconnect via extends through the second interconnect dielectric layer, is arranged directly over the protection liner, and is electrically coupled to the interconnect wire.

Abstract: Vias and methods of making the same. The vias including a middle portion located in a via opening in an interconnect-level dielectric layer, a top portion including a top head that extends above the via opening and extends laterally beyond upper edges of the via opening and a bottom portion including a bottom head that extends below the via opening and extends laterally beyond lower edges of the via opening. The via may be formed from a refractory material.

Abstract: A method includes forming a first metal into a first trench in a dielectric layer, performing a thermal treatment to the first metal such that an average grain size of the first metal is increased, and performing a first chemical mechanical polish (CMP) process to the first metal after the performing the thermal treatment.

Abstract: The present disclosure discloses an impacting T-junction component regulator for regulating components of a non-azeotropic working medium, which is formed by connecting a single T-junction or a plurality of T-junctions. Each of the T-junction comprises an inlet pipe and an outlet pipe. When the impacting T-junction component regulator is formed by a plurality of connected T-junctions, the impacting T-junction component regulator further comprises an upper manifold trunk communicated with an outlet pipe of each T-junction and throttle valves located between two adjacent T-junctions. By using the characteristics of unequal vapor and liquid components of the non-azeotropic working medium and mal-distribution of two phase flows by vertical impacting T-junctions, the regulator achieves the fluid flowing through a plurality of T-junctions and throttle valves once so as to achieve the purpose of separating components.

Abstract: A method and an apparatus for extracting a centerline of a tubular object are provided. The method includes: preprocessing an image of the tubular object whose centerline is to be extracted to obtain an enhanced image, acquiring a gradient vector flow field of the enhanced image; acquiring a deformation force parameter based on the gradient vector flow field and extracting ridge points of the tubular object from the enhanced image, establishing a regularized open curve deformable model; if a deformation end condition is not met, deforming and processing one ridge line segment in the initial ridge line segment list based on the model to obtain a centerline segment of the tubular object, updating the initial ridge line segment list based on the ridge line segment traversed; if the deformation end condition is met, generating a centerline of the tubular object based on the centerline segments.

Abstract: A surgical image pickup system utilizes an adjustable lens set and a complex lens set to change the direction of the incident light emitted from the light source and the position of the surgical site on which the incident light projects. The eyepiece and the sensor have the same field of view and the same optical axis such that first image generated by the sensor and a second image generated by the eyepiece are the same. The sensor transmits the first image to the external display for display by wireless communication. By means of the foregoing configuration, the second image which doctor utilizes the eyepiece to see and the first image which the external display displays are the same, thereby facilitating the operation of surgery.

Abstract: Disclosed are a method, an apparatus, a device and a storage medium for extracting a cardiovisceral vessel from a CTA image, including: performing corrosion operation and expansion operation on an image data successively via a preset structural element to obtain a structure template, wherein the image data is a coronary angiography image after a downsampling processing, and the structure template is a structure excluding a pulmonary region; performing a transformation in layer-by-layer on slice images of the structure template to acquire a first ascending aorta structure in the structure template, and acquiring an aorta center coordinate and an aorta radius in the last layer of slice image of the structure template; and establishing a binarized spherical structure according to the aorta center coordinate and the aorta radius, and synthesizing a second ascending aorta structure by combining the first ascending aorta structure with the structure template and the binarized spherical structure.

Abstract: The present invention is applicable to the technical field of medical image processing, and provides a method, an apparatus, a device, and a storage medium for extracting a cardiovascular vessel from a CTA image. The method comprises: performing erosion operation and dilation operation on image data successively via a preset structural element to obtain a structure mask; performing a slice-by-slice transformation on the plane of section images of the structural mask to acquire the first ascending aortic structure in the structural mask, and acquiring an aortic center position and an aortic radius in the last slice of the plane of section image of the said structural mask; establishing a binarized sphere structure according to the aortic center position and the aortic radius, and synthesizing a second ascending aorta structure by combining the first ascending aorta structure with the structure mask and the binarized sphere structure.

Abstract: A method and an apparatus for extracting a centerline of a tubular object are provided. The method includes: preprocessing an image of the tubular object whose centerline is to be extracted to obtain an enhanced image, acquiring a gradient vector flow field of the enhanced image; acquiring a deformation force parameter based on the gradient vector flow field and extracting ridge points of the tubular object from the enhanced image, establishing a regularized open curve deformable model; if a deformation end condition is not met, deforming and processing one ridge line segment in the initial ridge line segment list based on the model to obtain a centerline segment of the tubular object, updating the initial ridge line segment list based on the ridge line segment traversed; if the deformation end condition is met, generating a centerline of the tubular object based on the centerline segments.

Abstract: A method of operating an illuminator and apparatus thereof are proposed. A method includes: directing a radiation beam to the illuminator comprising slit fingers; sensing a temperature value of each of the slit fingers; determining a shifting value of the respective slit finger based on the temperature value; causing the respective slit finger to move according to the shifting value to form a light slit from the radiation beam; and exposing a workpiece using the light slit.