Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.

Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.

Abstract: A method of manufacturing a memory device includes forming a first dielectric layer over a substrate and forming a charge storage element over the first dielectric layer. The method also includes forming a second dielectric layer over the charge storage element and forming a control gate over the second dielectric layer. The method further includes depositing an interlayer dielectric over the control gate at a high temperature.

Abstract: A manufacturing method for a dual bit flash memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer with the depositing performed without using ammonia at an ultra-slow deposition rate. First and second bitlines are implanted and a wordline layer is deposited. A hard mask layer is deposited over the wordline layer. A photoresist is deposited over the wordline layer and used to form a hard mask. The photoresist is removed. The wordline layer is processed using the hard mask to form a wordline and the hard mask is removed. A reduced hydrogen, high-density data retention liner to reduce charge loss, covers the wordline and the charge-trapping dielectric layer. An interlayer dielectric layer is deposited over the data retention liner.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.

Abstract: A semiconductor device includes a semiconductor substrate, an ONO film that is provided on the semiconductor substrate and has a contact hole, and an interlayer insulating film that is provided directly on the ONO film and contains phosphorus. The interlayer insulating film contains 4.5 wt % of phosphorus or more in an interface portion that interfaces with the ONO film. The interlayer insulating film comprises a first portion that contacts the ONO film, and a second portion provided on the first portion. The first portion has a phosphorus concentration more than that of the second portion.

Abstract: A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.

Abstract: Pinholes in a silicon oxynitride film are reduced by PECVD deposition of a plurality of silicon oxynitride sub-layers in a PECVD apparatus containing multiple chambers. Embodiments include forming a layer of amorphous carbon over a conductive layer, such as doped polycrystalline silicon, on a substrate, transferring the substrate to a multi-chamber PECVD tool and depositing 2 to 7, e.g., 5, sub-layers of dense silicon oxynitride at a total thickness of 300 to 700 ?.

Abstract: Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 ? to 600 ?, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.

Abstract: Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 ? to 600 ?, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.

Abstract: A manufacturing method for an integrated circuit memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer. First and second bitlines are implanted and a wordline layer is deposited. A hard mask layer is deposited over the wordline layer. A photoresist is deposited over the wordline layer and used to form a hard mask. The photoresist is removed. The wordline layer is processed using the hard mask to form a wordline and the hard mask is removed. A reduced hydrogen, ultra-violet block data retention liner covers the wordline and the charge-trapping dielectric layer. The reduced hydrogen levels reduce the charge loss compared to prior art. The surface of the liner is processed to block UV light before completing the integrated circuit.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.

Abstract: A hardmask stack is comprised of alternating layers of doped amorphous carbon and undoped amorphous carbon. The undoped amorphous carbon layers serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers to prevent delamination. The stack is provided with a top capping layer. The layer beneath the capping layer is preferably undoped amorphous carbon to reduce photoresist poisoning. An alternative hardmask stack is comprised of alternating layers of capping material and amorphous carbon. The amorphous carbon layers may be doped or undoped. The capping material layers serve as buffer layers that constrain the effects of compressive stress within the amorphous carbon layers to prevent delamination. The top layer of the stack is formed of a capping material. The layer beneath the top layer is preferably undoped amorphous carbon to reduce photoresist poisoning.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.

Abstract: A hardmask stack is comprised of alternating layers of doped amorphous carbon and undoped amorphous carbon. The undoped amorphous carbon layers serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers to prevent delamination. The stack is provided with a top capping layer. The layer beneath the capping layer is preferably undoped amorphous carbon to reduce photoresist poisoning. An alternative hardmask stack is comprised of alternating layers of capping material and amorphous carbon. The amorphous carbon layers may be doped or undoped. The capping material layers serve as buffer layers that constrain the effects of compressive stress within the amorphous carbon layers to prevent delamination. The top layer of the stack is formed of a capping material. The layer beneath the top layer is preferably undoped amorphous carbon to reduce photoresist poisoning.

Abstract: A BARC comprising materials having a lower pinhole density than that of silicon oxynitride and materials having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of polysilicon than that of amorphous carbon is employed to reduce deformation of a pattern to be formed in a patternable layer. The patternable layer is formed over a substrate. A multi-layered anti-reflective coating is formed over the patternable layer. A photoresist pattern is formed on the coating. The coating may comprise an amorphous carbon layer formed over the patternable layer and a SiC layer having a lower pinhole density than the pinhole density of SiON formed over the amorphous carbon layer. The coating may also be formed over a polysilicon layer and comprise a thermal expansion buffer layer having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of polysilicon than that of amorphous carbon.

Abstract: A method of eliminating voids in the interlayer dielectric material of 0.18-&mgr;m flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric of a 0.18-&mgr;m flash memory semiconductor device by providing a first BPTEOS layer, using a very low deposition rate and having a thickness in a range of approximately 3 kÅ; and providing a second BPTEOS layer, using a standard deposition rate and having a thickness in a range of approximately 13 kÅ, wherein both layers have an atomic dopant concentration of approximately 4.5% B and approximately 5% P. This two-step deposition process completely eliminates voids in the ILD for a 0.5-&mgr;m distance (gate-to-gate) as well as 0.38-&mgr;m distance (gate-to-gate) which is the future flash technology.

Abstract: A method of eliminating voids in the interlayer dielectric material of 0.18-&mgr;m flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric of a 0.18-&mgr;m flash memory semiconductor device by providing a first BPTEOS layer, using a very low deposition rate and having a thickness in a range of approximately 3 kÅ; and providing a second BPTEOS layer, using a standard deposition rate and having a thickness in a range of approximately 13 kÅ, wherein both layers have an atomic dopant concentration of approximately 4.5% B and approximately 5% P. This two-step deposition process completely eliminates voids in the ILD for a 0.5-&mgr;m distance (gate-to-gate) as well as 0.38-&mgr;m distance (gate-to-gate) which is the future flash technology.

Abstract: Silicon oxynitride layers are deposited by plasma enhanced chemical vapor deposition with significantly reduced defects, such as nodules, employing a ramp down step at the end of the deposition cycle. Embodiments include depositing a SION ARC at a first power, discontinuing the flow of SiH4 and ramping down to a second power while continuing the flow of N2O and N2, and ramping down to a third power while continuing the flow of N20 and N2 before pumping down. The resulting relatively defect free silicon oxynitride layers can be advantageously employed as an ARC, particularly when patterning contact holes in manufacturing flash memory devices.