Abstract: The present disclosure relates to semiconductor structures, memory arrays, and manufacturing methods thereof. The semiconductor structure includes a first dielectric layer, a semiconductor layer, and a dual gate structure. The semiconductor layer is disposed over the first dielectric layer. The semiconductor layer includes a source region, a drain region, and a body region between the source region and the drain region. The dual gate structure is disposed over the body region. The dual gate structure includes a first gate, a second gate, and a spacing material. The second gate includes a first horizontal section laterally distanced from the first gate. The spacing material is disposed between the first gate and the first horizontal section of the second gate.

Abstract: A non-volatile memory device includes: an insulation layer; a Schottky diode, which is formed on the insulation layer; a writing wire which is conductive and is electrically connected to a first end of the Schottky diode; a memory unit on the Schottky diode, the memory unit being electrically connected to a second end of the Schottky diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; wherein when the non-volatile memory device is selected for a data to be written into, a first current flows through the Schottky diode to write the data into the memory unit.

Abstract: A non-volatile memory device includes: an insulation layer; a PN diode, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer; a writing wire which is conductive and is electrically connected to the anode end of the PN diode; a memory unit on the PN diode, the memory unit being electrically connected to a cathode end of the PN diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; wherein when the non-volatile memory device is selected for a data to be written into, a first current flows through the PN diode to write the data into the memory unit.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor structure. The method comprises providing a first structure. The first structure comprises a first substrate. The method comprises providing a second structure. The second structure comprises a second substrate and a first device metal layer on and in contact with the second substrate. The second substrate comprises a single crystalline semiconductor material and an implanted hydrogen layer. The method comprises bonding the first structure and the second structure by a bonding layer to form a bonded structure. The method comprises removing a portion of the second substrate from approximately the implanted hydrogen layer to form a first semiconductor layer. The method comprises patterning the first semiconductor layer. The method comprises forming at least one of a second device metal layer and a second conductive metal layer.

Abstract: A non-volatile memory device includes: an insulation layer; a PN diode, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer; a writing wire which is conductive and is electrically connected to the anode end of the PN diode; a memory unit on the PN diode, the memory unit being electrically connected to a cathode end of the PN diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; wherein when the non-volatile memory device is selected for a data to be written into, a first current flows through the PN diode to write the data into the memory unit.

Abstract: The present disclosure relates to semiconductor structures, methods for making the same, and methods using the same. The semiconductor structure comprises a first substrate, a second substrate on the first substrate, a first bonding layer between the first substrate and the second substrate, a first etch stop layer between the first bonding layer and the second substrate, and the first etch stop layer has high etch selectivity against the first bonding layer. In particular, some embodiments of the present disclosure relate to semiconductor structures with etch stop layer, methods for making the same, and methods using the same.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a semiconductor layer, a first gate structure, a second gate structure, a first dielectric layer, a first capacitor and a second capacitor. The semiconductor layer comprises a first cell region and a second cell region. The first cell region comprises a first source region, a first drain region, and a first body region between the first source region and the first drain region. The second cell region comprises a second source region, a second drain region, and a second body region between the second source region and the second drain region. The first gate structure is disposed on a first side of the semiconductor layer and over the first body region, and the second gate structure is disposed on the first side of the semiconductor layer and over the second body region. The first dielectric layer is disposed on a second side of the semiconductor layer opposite from the first side.

Abstract: The present disclosure relates to semiconductor structures and methods for making the same. The semiconductor structure comprises a first insulation layer, a first semiconductor layer, and a conducting structure. The first semiconductor layer is over the first insulation layer. The first semiconductor layer comprises a first transistor. The first transistor comprises a first source region, a first drain region, and a first channel region under a first gate disposed over the first semiconductor layer. The conducting structure is disposed under the first channel region and spaced apart from the first drain region. The conducting structure is disposed over the first insulation layer and either within or in contact with the first semiconductor layer.

Abstract: A non-volatile memory device includes: an insulation layer; a PN diode, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer; a writing wire which is conductive and is electrically connected to the anode end of the PN diode; a memory unit on the PN diode, the memory unit being electrically connected to a cathode end of the PN diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; wherein when the non-volatile memory device is selected for a data to be written into, a first current flows through the PN diode to write the data into the memory unit.

Abstract: A package structure is provided, which includes: a light emitting element having a first surface, a second surface opposite to the first surface, and a side surface adjacent to and connected with the first surface and the second surface; a fluorescent layer covering the first surface and the side surface of the light emitting element; a transparent layer covering the fluorescent layer with an inclined surface formed at an outer side of the transparent layer; and a reflective layer formed on the inclined surface and covering an outer side of the fluorescent layer. Therefore, light can be prevented from leakage from the outer side of the fluorescent layer. A method for fabricating the package structure is also provided.

Abstract: A charged powder supply device is disclosed. A plurality of charged powder particles are disposed on an upper side of a carrier and at least an action source is positioned at a lower side of the carrier for acting on the carrier so as to vibrate the charged powder particles on the upper side of the carrier. As such, the vibrated charged powder particles are attached to objects to be coated, such as LEDs, under the effect of an electric field so as to form a powder layer, such as a phosphor layer. Since there are no other external forces that affect the moving direction of the charged powder particles, the powder layer can be uniformly formed on the objects.

Abstract: A method for forming a phosphor material on a surface of a target is provided, which includes the steps of: providing a chamber for receiving the phosphor material constituted by a plurality of particles, wherein a grid is disposed on or beneath a surface constituted by the phosphor material in the chamber, and the grid has a plurality of fine lines SN each having opposite first and second ends, N being a positive integer greater than 1; exposing the surface of the target to the phosphor material; and creating a charge on the plurality of particles, generating an electric field between the chamber and the surface of the target and oscillating the plurality of fine lines, so as to drive the plurality of particles toward the surface of the target and to be deposited on the surface of the target.

Abstract: A charged powder supply device is disclosed. A plurality of charged powder particles are disposed on an upper side of a carrier and at least an action source is positioned at a lower side of the carrier for acting on the carrier so as to vibrate the charged powder particles on the upper side of the carrier. As such, the vibrated charged powder particles are attached to objects to be coated, such as LEDs, under the effect of an electric field so as to form a powder layer, such as a phosphor layer. Since there are no other external forces that affect the moving direction of the charged powder particles, the powder layer can be uniformly formed on the objects.

Abstract: A light-emitting package structure is provided, including an encapsulant, an light-emitting component embedded the encapsulant and having a light-emitting side and a non-emitting side opposing the light-emitting side, a dam embedded and exposed from the encapsulant, and a phosphor layer covering the light-emitting side and the dam. The non-emitting side has a plurality of electrodes. Since the heat generated by the phosphor layer can be transmitted to an outside region of the light-emitting package structure through the dam, the etiolation of the encapsulant can thus be prevented. A method of fabricating the light-emitting package structure is also provided.

Abstract: A method for dispensing powder includes: providing a device for dispensing powder, the device including a framework, warps connected to the framework, a trough for receiving powder, an actuating member for displacing at least one of the framework and the trough, and an action source for the powder to be detached from the warps and dispensed on an object; supplying the powder to the warps and generating an electric field for the powder to carry an electric charge and become charged powder; and providing a force, by the action source, to at least one of the framework and the warps for the charged powder to be detached from the warps, the charged powder moving dependent on the electric field and being dispensed on the object. The warps have equal amounts of charged powder carried thereon, allowing the charged powder to be distributed evenly.

Abstract: A light-emitting structure and a method of fabricating the light-emitting structure. The method includes covering an LED die provided on a carrier with a uniform phosphor layer, with an accommodation space constituted by the carrier and the uniform phosphor layer; and forming in the accommodation space a first light-pervious body such that the uniform phosphor layer in various shapes is formed on the LED die. The light-emitting structure thus fabricated has excellent optical property.

Abstract: A package structure is provided, which includes a light emitting element having opposite first and second sides, a coating body combined with side faces of the light emitting element, a fluorescent layer disposed on the second side, and a metal structure disposed on the first side. As the coating body is in contact with and combined with the side faces of the light emitting element, light will not be emitted from the side faces of the light emitting element. Therefore, the heat generated is reduced, and issues such as yellowing of the encapsulant and poor luminous efficiency due to overheating of the fluorescent powder are avoided. Further, the metal structure enhances the heat dissipation. A method for manufacturing the package structure is also provided.

Abstract: A method of manufacturing a light-emitting package structure is provided. The method includes disposing at least one light emitting element on a carrier and forming a reflective material. The light emitting element has opposite first and second sides and a plurality of third sides connected to the first side and the second side. The light emitting element is disposed on the carrier via the second side. The reflective material is formed on the third side of the light emitting element, so as to form a reflective film.

Abstract: The present disclosure provides a method of manufacturing a package structure. The method includes: providing a plurality of conductive portions and a light emitting element; encapsulating the light emitting element and the conductive portions by an encapsulant with a lateral surface of the light emitting element electrically insulated from the conductive portions; electrically connecting the light emitting element to the conductive portions by a conductive element. Accordingly, several methods can be selected to form the conductive element with no conventional limitations. The present disclosure further provides a package structure and a carrier.

Abstract: A molded substrate is provided, including: a release film; and a plurality of phosphor particles formed on the release film, wherein the phosphor particles have gaps therebetween. A method of manufacturing a package structure is also provided, including: disposing at least one light emitting element on a carrier; forming a transparent adhesive layer on a surface of the light emitting element; disposing the molded substrate on the transparent adhesive layer with the phosphor particles disposed between the transparent adhesive layer and the release film; filling the transparent adhesive layer into the gaps of the phosphor particles to form a phosphor layer; and removing the release film, so as to obtain an even phosphor layer.