Abstract: A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A lift pin includes a lift pin body arranged along a lift pin axis having a contact pad, a stem segment, a neck segment, and a span feature. The contact pad is defined at a first end of the lift pin body, the stem segment extends from the contact pad, and the neck segment extends from the stem segment. The span feature is defined at a second end of the lift pin body, is connected to the contact pad by the neck segment and the stem segment, and has a minor and major widths. The minor width is equivalent to a neck diameter defined by the neck segment, the major with is greater than the minor width, and the major width is greater than a stem diameter defined by the stem segment. Lift pin arrangements, semiconductor processing systems, and methods of making semiconductor processing systems are also described.

Abstract: A liquid precursor container includes an inner container, an outer container, and a baffle member. The inner container has an inner base portion, an inner intermediate portion extending from the inner base portion, and an inner lid portion coupled to the inner base portion by the inner intermediate portion. The outer container envelops the inner container and has an outer base portion spaced apart from the inner base portion, an outer intermediate portion extending from the outer base portion and about the inner intermediate portion of the inner container, and an outer lid portion coupled to the outer base portion by the outer intermediate portion of the outer container. The baffle member is arranged between the inner lid portion of the inner container and the outer lid portion of the outer container to circulate liquid coolant about the inner container to cool a liquid precursor contained within the inner container.

Abstract: A liquid precursor container is provided. The liquid precursor container includes an inner container, an outer container, and a baffle member. The inner container has an inner base portion, an inner intermediate portion extending upwards from the inner base portion, and an inner lid portion coupled to the inner base portion by the inner intermediate portion. The outer container has an outer base portion spaced apart from the inner base portion of the inner container and an outer intermediate portion extending upwards from the outer base portion and about the inner intermediate portion of the inner container. The baffle member is arranged between the inner intermediate portion of the inner container and the outer intermediate portion of the outer container, extends upwards from the outer base portion of the outer container, and terminates between the inner lid portion and the inner base portion of the inner container.

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

Abstract: A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.

Abstract: A semiconductor processing system includes a chamber arrangement, an exhaust arrangement connected to the chamber arrangement, an accretion sensor supported within the exhaust arrangement, and a processor. The processor is disposed in communication with the accretion sensor and is responsive to instructions recorded on a non-transitory machine-readable medium to receive an accretion signal from the accretion sensor, the accretion signal indicative of an accretion amount disposed within the exhaust arrangement, receive a predetermined accretion amount value, and compare the accretion amount to the predetermined accretion amount value. The instructions further cause the processor to execute an accretion countermeasure when the received accretion amount is greater than the predetermined accretion amount value. Methods of controlling accretion within exhaust arrangements for semiconductor processing systems and foreline assemblies for semiconductor processing systems are also described.

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

Abstract: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

Abstract: A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

Abstract: A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

Abstract: A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.