Abstract: Disclosed herein is a method of recovering performance of a radiation detector, the radiation detector comprising: a radiation absorption layer configured to absorb radiation particles incident thereon and generate an electrical signal based on the radiation particles; an electronic system configured to process the electrical signal, the electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; the method comprising: removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator.

Abstract: Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer configured to generate an electrical signal from an X-ray photon incident on the X-ray absorption layer; an electronics layer comprising an electronics system configured to process or interpret the electrical signal; and an interposer chip embedded in a board of an electrically insulating material; wherein the X-ray absorption layer is bonded to the electronics layer; wherein the electronics layer is bonded to the interposer chip.

Abstract: Disclosed herein is a detector having a pixel in a substrate and configured to detect radiation particles incident thereon; a first guard ring in the substrate, surrounding the pixel, and comprising a first doped semiconductor region in the substrate and a first electrically conductive layer in electrical contact to the first doped semiconductor region. The first electrically conductive layer overhangs the first doped semiconductor region toward an interior of the first guard ring.

Abstract: Disclosed herein is a radiation detector comprising: a layer of quantum dots configured to emit a pulse of visible light upon absorbing a radiation particle; an electronic system configured to detect the radiation particle by detecting the pulse of visible light.

Abstract: Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

Abstract: Disclosed herein is a radiation detector comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts.

Abstract: Disclosed herein is a method, comprising: exposing an image sensor to a scene; measuring, as analog signals, intensities of light from the scene by a plurality of pixels of the image sensor; converting the analog signals to digital signals; and determining a total intensity of light of the scene by calculating a sum of the digital signals.

Abstract: Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

Abstract: Disclosed herein is an apparatus comprising: a probe carrier comprising: a first substrate comprising a first plurality of through holes in the first substrate, a transparent window attached to the first substrate and across an opening of each of the first plurality of through holes, wherein the transparent window closes the opening; and probes attached to one or more locations on the transparent window, wherein interaction between the probes and an analyte generates a signal; a second substrate comprising a second plurality of through holes in the second substrate, wherein the second plurality of through holes are configured as a plurality of collimators; a sensor comprising a plurality of pixels configured to detect the signal.

Abstract: Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

Abstract: Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer configured to generate an electrical signal from an X-ray photon incident on the X-ray absorption layer; an electronics layer comprising an electronics system configured to process or interpret the electrical signal; wherein at least one of the X-ray absorption layer and the electronics layer is embedded in a board of an electrically insulating material.

Abstract: Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

Abstract: Disclosed herein is a detector having a pixel in a substrate and configured to detect radiation particles incident thereon; a first guard ring in the substrate, surrounding the pixel, and comprising a first doped semiconductor region in the substrate and a first electrically conductive layer in electrical contact to the first doped semiconductor region; a second guard ring in the substrate, surrounding the first guard ring, and comprising a second doped semiconductor region in the substrate and a second electrically conductive layer in electrical contact to the second doped semiconductor region. The first electrically conductive layer overhangs the first doped semiconductor region toward an interior of the first guard ring by a greater extent than the second electrically conductive layer overhangs the second doped semiconductor region toward an interior of the second guard ring.

Abstract: Disclosed herein is a method for making an apparatus suitable for detecting X-ray, the method comprising: obtaining a wafer and a substrate; wherein the substrate comprises an X-ray absorption layer comprising a first plurality of electrical contacts; wherein the wafer has multiple dies and comprises an electronic layer comprising a second plurality of electrical contacts and an electronic system configured to process or interpret signals generated by X-ray photons incident on the X-ray absorption layer; aligning the first plurality of electrical contacts to the second plurality of electrical contacts; mounting the wafer to the substrate such that the first plurality of electrical contacts are electrically connected to the second plurality of electrical contacts; wherein the substrate further comprises a transmission line electrically bridging at least some of the dies; wherein the second plurality of electrical contacts are configured to feed the signals to the electronic system.

Abstract: A method of making an apparatus suitable for detecting X-ray is disclosed. In an example, the method includes: obtaining a semiconductor substrate with a first electrical contact on a first surface and a second electrical contact on a second surface opposite the first surface, the second electrical contact comprising a plurality of discrete portions; forming a plurality of trenches extending into at least 70% of a thickness of the semiconductor substrate, wherein the plurality of trenches encircle each of the discrete portions.

Abstract: Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

Abstract: Disclosed herein is a system, comprising: a detector configured to determine a number of photons of one or more characteristic X-rays emitted by a chemical element in the electrolyte and received by the detector, within a period of time; a processor configured to determine a concentration of the chemical element in the electrolyte based on the number; a controller configured to replenish the chemical element into the electrolyte or configured to stop electroplating with the electrolyte, based on the concentration.

Abstract: Disclosed herein is a radiation detector comprising: an absorption layer configured to generate a first electrical signal upon absorbing a pulse of visible light and to generate a second electrical signal upon absorbing a particle of radiation; an electronic system configured to receive a combination of the first electrical signal and the second electrical signal and configured to extract the first electrical signal from the combination of the first electrical signal and the second electrical signal.

Abstract: Disclosed herein is a method of imaging a tracer in a body region of an organism, the body region comprising L imaging regions (imaging regions (i), i=1, . . . ,L), wherein L is an integer greater than 1, the method comprising: for i=1, . . . ,L, causing the tracer in essentially only the imaging region (i) to emit characteristic X-ray photons (i); for i=1, . . . ,L, capturing a region image (i) of the tracer in essentially only the imaging region (i) with the characteristic X-ray photons (i); and determining a three-dimensional (3D) distribution of the tracer in the body region based on the region images (i), i=1, . . . ,L.

Abstract: Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.