Abstract: Disclosed herein is an apparatus suitable for light scanning. The apparatus may comprise a light source, an optical device and a detector. The light source may be configured to generate a scanning light beam that diverges along a first dimension to illuminate a line along the first dimension in a target scene, and may be configured to scan the scanning light beam in a second dimension perpendicular to the first dimension. The optical device may be configured to converge return light waves reflected off of the target scene to generate converged return light waves. The detector may comprise a light receiving component. The light receiving component may be configured to receive the converged return light waves. The detector may be configure to detect the converged return light waves incident on the light receiving component.

Abstract: Disclosed herein is a method of operating a radiation detector, comprising for i=1, . . . , N, during a transfer period (i), electrically connecting pixel (1,i) of pixels (1,j), j=1, . . . , N of the radiation detector to a first signal processing circuit while electrically disconnecting the other N?1 pixels of the pixels (1,j), j=1, . . . , N from the first signal processing circuit; and for i=1, . . . , N, during the transfer period (i), transferring electrical signals from the pixel (1,i) to the first signal processing circuit.

Abstract: Disclosed herein is a method, comprising: for i=1, . . . , M, sending a pencil radiation beam (i) toward an image sensor, wherein the pencil radiation beam (i) is incident on an incident region (i) on the image sensor, wherein the pencil radiation beam (i) is aimed at a target region (i) on the image sensor, wherein M is a positive integer, wherein the image sensor comprises active areas spatially discontinuous from each other, and wherein the incident regions (i), i=1, . . . , M and the target regions (i), i=1, . . . , M are on the active areas; and for i=1, . . . , M, determining an offset (i) between the incident region (i) and the target region (i).

Abstract: Disclosed herein is a method, comprising: for i=1, . . . , M, sending a pencil radiation beam (i) toward an image sensor, wherein the pencil radiation beam (i) is incident on an incident region (i) on an active area of the image sensor, wherein the pencil radiation beam (i) is aimed at a target region (i) on the active area, wherein M is a positive integer, for i=1, . . . , M, determining an offset (i) between the incident region (i) and the target region (i).

Abstract: Disclosed herein is a method, comprising: exposing a stack of currency bills to a radiation; detecting radiation particles of the radiation that have penetrated a pre-specified stack portion of the stack; and determining a number M of the currency bills based on the detected radiation particles.

Abstract: Disclosed herein is a method comprising: translating a detector module such that a point of the detector module moves along a curve through movement rounds (i), i=1, . . . , M, with M being a positive integer, wherein the curve is smooth; and in the movement round (i), i=1, . . . , M, capturing partial images (i, j) of a scene using the detector module, j=1, . . . , Hi, when the point is at position Pi,j on the curve, with Hi being an integer greater than 1.

Abstract: Disclosed herein is an apparatus comprising: a first radiation source configured to produce a first divergent radiation beam toward an object; a second radiation source configured to produce a second divergent radiation beam toward the object; and an image sensor; wherein the object is configured to rotate with respect to the image sensor, the first radiation source, and the second radiation source, and wherein relative positions among the image sensor, the first radiation source, and the second radiation source are fixed.

Abstract: Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

Abstract: Disclosed herein is a method of using an image sensor comprising N sensing areas for capturing images of a scene, the N sensing areas being physically separate from each other, the method comprising: for i=1, . . . , P, and j=1, . . . , Q(i), positioning the image sensor at a location (i,j) and capturing a partial image (i,j) of the scene using the image sensor while the image sensor is at the location (i,j), thereby capturing in total R partial images, wherein R is the sum of Q(i), i=1, . . . , P, wherein P>1, wherein Q(i), i=1, . . . , P are positive integers and are not all 1, wherein for i=1, . . . , P, a location group (i) comprises the locations (i,j), j=1, . . . , Q(i), and wherein a minimum distance between 2 locations of 2 different location groups is substantially larger than a maximum distance between two locations of a same location group; and determining a combined image of the scene based on the R partial images.

Abstract: Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

Abstract: Disclosed herein is a radiation detector comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts.

Abstract: Disclosed herein is a method of operating an imaging system which comprises (A) an image sensor comprising (a) a top surface, (b) M physically separate active areas on the top surface, and (c) a dead zone on the top surface and between the M active areas, and (B) a radiation source system which comprises an electron bombardment target, the method comprising: for i=1, . . . , N, sequentially causing emission of X-ray photons (i) from a radiation position (i) by causing electrons to bombard a target surface of the electron bombardment target at the radiation position (i); and for i=1, . . . , N, in response to the emission of the X-ray photons (i), capturing M images (i) of portions (i) of a same object, respectively in the M active areas, resulting in M×N images, wherein each point of the object is captured in at least one image of the M×N images.

Abstract: Disclosed herein is a system comprising: a radiation source configured to cause emission of characteristic X-rays of a chemical element in human breast tissues by generating and directing radiation to the human breast tissues; a first image sensor configured to capture a first set of images of the human breast tissues using the characteristic X-rays; a second image sensor configured to capture a second set of images of the human breast tissues using the radiation that has transmitted through the human breast tissues; and a clamp configured to compress the human breast tissues against the second image sensor; wherein the first image sensor is between the clamp and the second image sensor.

Abstract: Disclosed herein is a method comprising: capturing a first image of a tissue using radiation; selecting a region of the tissue based on the first image; capturing a second image of the tissue in the region using the radiation; wherein a signal-to-noise ratio of the second image is higher than a signal-to-noise ratio of the first image.

Abstract: Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

Abstract: Disclosed herein is an image sensor comprising: a plurality of radiation detectors; a mask with a plurality of radiation transmitting zones and a radiation blocking zone; and an actuator configured to move the plurality of radiation detectors from a first position to a second position and to move the mask from a third position to a fourth position; wherein while the radiation detectors are at the first position and the mask is at the third position and while the radiation detectors are at the second position and the mask is at the fourth position, the radiation blocking zone blocks radiation from a radiation source that would otherwise incident on a dead zone of the image sensor and the radiation transmitting zones allow at least a portion of radiation from the radiation source that would incident on active areas of the image sensor to pass through.

Abstract: Disclosed herein is an apparatus comprising: a probe carrier, an optical system and a sensor; wherein the probe carrier comprises a substrate, a first layer and a second layer; wherein the substrate comprises a first surface, a second surface, one or more locations on the first surface configured to be deposit sites for one or more probes; wherein the second surface is at an opposite side of the substrate from the first surface; wherein the first layer is on the first surface of the substrate or is embedded in the substrate under the first surface; wherein the second layer is on the second surface of the substrate or is embedded in the substrate under the second surface; the first and second layers are configured to reduce crosstalk between probes at different locations.

Abstract: Disclosed herein is a radiation detector comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts.

Abstract: Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

Abstract: Disclosed herein is a method of recovering performance of a radiation detector, the radiation detector comprising: a radiation absorption layer configured to absorb radiation particles incident thereon and generate an electrical signal based on the radiation particles; an electronic system configured to process the electrical signal, the electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; the method comprising: removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator.