Patents by Inventor Peng Fang

Peng Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bar field effect transistor
    Patent number: 5932911
    Abstract: A field effect transistor is formed across one or more trenches (26) or bars (120), thereby increasing the effective width of the channel region and the current-carrying capacity of the device.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: August 3, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: John T. Yue, Matthew S. Buynoski, Yowjuang W. Liu, Peng Fang
  • Method of forming asymmetrically doped source/drain regions
    Patent number: 5904528
    Abstract: Asymmetrically doped source/drain regions of a transistor are formed employing protective insulating layers to prevent a portion of the gate electrode from receiving an excessive impurity implantation dose and penetrating through the underlying gate insulating layer into the semiconductor substrate. Sidewall spacers are employed during heavy implantation.
    Type: Grant
    Filed: January 17, 1997
    Date of Patent: May 18, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Ming-Ren Lin, Peng Fang, Donald L. Wollesen
  • Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
    Patent number: 5891802
    Abstract: There is provided an improved metallization stack structure and a method for fabricating the same so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.
    Type: Grant
    Filed: July 23, 1997
    Date of Patent: April 6, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jiang Tao, Peng Fang
  • Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results
    Patent number: 5606518
    Abstract: A test method and apparatus are provided for predicting hot-carrier induced leakage over time in IGFET's. Test results are used to show how choice of channel length and stress voltages critically affect hot-carrier-induced leakage (HCIL) leakage over time, particularly in devices having submicron channel lengths. Models are developed for predicting leakage current over the long term given short term test results. Alternative design strategies are proposed for reliably satisfying long term leakage requirements.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: February 25, 1997
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Hao Fang, Peng Fang, John T. Yue
  • Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
    Patent number: 5600578
    Abstract: A test method and apparatus are provided for predicting hot-carrier induced leakage over time in IGFET's. Test results are used to show how choice of channel length and stress voltages critically affect hot-carrier-induced leakage (HCIL) leakage over time, particularly in devices having submicron channel lengths. Models are developed for predicting leakage current over the long term given short term test results. Alternative design strategies are proposed for reliably satisfying long term leakage requirements.
    Type: Grant
    Filed: August 2, 1993
    Date of Patent: February 4, 1997
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Hao Fang, Peng Fang, John T. Yue