Abstract: A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

Abstract: A substrate-less display device is disclosed. The substrate-less display device includes a barrier stack. The barrier stack includes a plurality of inorganic barrier films and a plurality of polymer films. The inorganic barrier films and the polymer films are alternatively disposed. The substrate-less display device further includes a thin-film-transistor (TFT) device layer disposed on the barrier stack, a display medium layer disposed on the TFT device layer, and an encapsulation layer disposed on the display medium layer.

Abstract: The present invention provides a method of manufacturing a thin film transistor and a pixel unit thereof, comprising: forming a metal oxide layer, a gate insulating layer, a gate metal layer and an etching barrier layer on a substrate; through the same mask, etching a part of the etching barrier layer, the gate metal layer and the gate insulating layer on the substrate, while retaining: the metal oxide layer, the gate insulating layer, the gate metal layer and the etching barrier layer in a gate region, and the part of the metal oxide layer, the gate insulating layer and the gate metal layer in source and drain regions for forming contact vias; and exposing the remaining metal oxide layer in the source region and in the drain region; depositing a passivation layer, etching and metallizing the exposed oxide in the source and drain regions to form the source and drain contact vias.

Abstract: The present invention is suitable to the field of electronic technology, and provides a method of manufacturing a thin film transistor and a pixel unit thereof, wherein when the thin film transistor is manufactured, the gate metal layer is used as a mask, and exposed from the back of the substrate to position the channel and the source and drain of the thin film transistor, so that the channel is self-aligned with the gate, and the source and drain are self-aligned with the gate and are symmetrical, and the thin film transistor thus manufactured has a small parasitic capacitance, and the circuit manufactured therewith is fast in operation, and less prone to occurring short circuit or open circuit.

Abstract: Various methods and apparatuses involving salt-based compounds and related doping are provided. In accordance with one or more embodiments, a salt-based material is introduced to a semiconductor material, and is heated to generate a neutral compound that dopes the semiconductor material. Other embodiments are directed to semiconductor materials with such a neutral compound as an impurity that affects electrical characteristics therein.

Abstract: An end cap assembly for an electric motor has a brush assembly, a circuit board, an inductor and a grounded metal element. The brush assembly has a plurality of brushes. The circuit board is fixed relative to the brush assembly. The inductor is electrically connected to the circuit board. The grounded metal element is positioned between the brushes and the inductor to absorb high frequency electromagnetic radiation transmitted from the brushes to the inductor.

Abstract: A method for synthesis of 1-decene oligomer is provided, wherein 1-decene is polymerized at 80-120° C., 0.8-1.4 MPa in the presence of aluminum trichloride catalyst supported on gamma-alumina and n-hexane solvent where the volume ratio of 1-decene to n-hexane is 3:8-4:1. The catalyst is treated as follows: impregnating gamma-alumina carrier in 0.5-2.0 M of hydrochloric acid, sulfuric acid, nitric acid or mixtures thereof, then vacuum drying at 80-100° C. and calcining at 400-800° C.; dissolving 5-10 g of anhydrous aluminum trichloride in 100 ml of tetrachloromethane, trichloromethane or dichloromethane solvent; adding the obtained solution into 10-20 g of activated alumina carrier and obtaining the catalyst after vacuum drying. The conversion of 1-decene is 50 wt % or more. The oligomer has a kinematic viscosity at 40° C. of 6.0-25 mm2/s and a viscosity index of 160-262.

Abstract: The present disclosure relates to an optical fiber connector for holding an optical fiber. The optical fiber connector includes a core and a cladding layer surrounding the core. The optical fiber connector includes an optical fiber holding apparatus, a ferrule unit, and a housing connecting to the optical fiber holding apparatus and the ferrule unit. The optical fiber holding apparatus includes a holding member with a first holding portion and a second holding portion. One of the first holding portion and the second holding portion includes at least one positioning pillar, and the other holding portion defines at least one positioning hole corresponding to the positioning pillar. The positioning pillar is configured to wind the clad strips locking the first holding portion and the second holding portion cooperatively to the optical fiber, and the positioning pillar is engaged with the positioning hole.

Abstract: An optical fiber fastening device holds an optical fiber which includes a core and a cladding layer surrounding the core. The cladding layer includes strips peeled from the core. The optical fiber fastening device includes a clamping member and a fastening sleeve. The clamping member includes a first and a second clamping portion buckled together to clamp the optical fiber, with one including at least one locating rod configured for being wrapped around by the strips, and the other including at least one locating hole receiving the at least one locating rod. The fastening sleeve sleeves over and holds the first and the second clamping portion together.

Abstract: An optical fiber connector assembling device includes a body defining an assembling space, a first fiber supporting groove, and a second fiber supporting groove. The first and second fiber supporting grooves are located at opposite sides of the assembling space and are coupled with the assembling space, the assembling device is used to precisely assemble and close together, or disassemble a fiber optic connector and an optic fiber.

Abstract: A method for assembling an optical fiber connector is disclosed. According to the method, an optical fiber including strips is provided. The optical fiber connector including a fiber fastening device and a housing is provided. The optical fiber is put in the fiber fastening device and the strips are fixed on the fiber fastening device. Finally, the fiber fastening device is inserted into the housing.

Abstract: An optical fiber connector includes a fiber fixing unit configured for holding the optical fiber, a ferrule configured for receiving an end of the optical fiber, and a housing receiving and connected to the fiber fixing unit and the ferrule. The housing includes side walls, the side walls cooperatively form an end surface adjacent to the fiber fixing unit, the side walls define two opposite releasing slots, the releasing slots penetrate through the side walls along a direction parallel to the end surface and are open at the end surface.

Abstract: The present invention relates to the field of electronic device fabrication, provides a method for fabricating a flexible electronic device, and is intended to address the problems present in the prior art that the adhesive cannot be completely peeled off and the flexible substrate is damaged during peeling the flexible substrate from the rigid substrate in the flexible electronic device fabrication. The fabrication method comprises providing a channel on a rigid substrate; adhering a flexible substrate to the rigid substrate with an adhesive; fabricating an electronic device on the flexible substrate; injecting a chemical substance into the channel; and reacting the chemical substance with the adhesive, and peeling the flexible substrate from the rigid substrate. The present invention also provides a substrate for fabricating a flexible electronic device.

Abstract: An electric motor includes a stator and a rotor. The stator includes a motor housing with an open end and an end cover mounted to the open end. The rotor includes a rotor shaft that extends through the end cover. The end cover includes a bearing that supports the rotor shaft. The rotor shaft and motor housing are made of an electrically conductive material and are electrically connected with each other. The motor housing, end cover, bearing and rotor shaft cooperatively form an electromagnetic shield suppressing electromagnetic interference generated by the motor. Optionally, the rotor shaft drives a coaxial worm shaft of a gearbox by an insulating member, which further suppresses electromagnetic interference.

Abstract: The present invention provides a method of manufacturing a thin film transistor and a pixel unit thereof, comprising: forming a metal oxide layer, a gate insulating layer, a gate metal layer and an etching barrier layer on a substrate; through the same mask, etching a part of the etching barrier layer, the gate metal layer and the gate insulating layer on the substrate, while retaining: the metal oxide layer, the gate insulating layer, the gate metal layer and the etching barrier layer in a gate region, and the part of the metal oxide layer, the gate insulating layer and the gate metal layer in source and drain regions for forming contact vias; and exposing the remaining metal oxide layer in the source region and in the drain region; depositing a passivation layer, etching and metallizing the exposed oxide in the source and drain regions to form the source and drain contact vias.

Abstract: A motor includes motor terminals for connecting with an external power supply and an internal circuit connected to the motor terminals. The motor further includes a RF filter. The RF filter includes a conductive wire coiled in either a helical manner or a spiral manner. Terminals of the conductive wire at opposite axial ends of the coil are connected to a corresponding one of the motor terminals and the internal circuit, respectively. The intensity of the electromagnetic waves radiated from most parts of the conductive wire of the RF filter is attenuated by reflected electromagnetic waves from other parts of the conductive wire. Therefore, the intensity of the electromagnetic wave radiated from the motor is greatly reduced. A RF filter for the motor is also provided.

Abstract: Methods of treating the surface of a metal-containing hardmask used in the manufacture of semiconductors by contacting the hardmask surface with a composition capable of adjusting the water contact angle so as to substantially match that of subsequently applied organic coatings are provided.

Abstract: The present invention is applicable to the field of electronic component technologies and provides a manufacturing method of a self-aligned metal oxide TFT component, including: selecting a substrate and preparing a gate on the substrate; successively disposing an insulation layer, a transparent electrode layer, and a photoresist on the gate; using the gate as a mask to perform exposure from a back side of the substrate, so as to form a source and a drain that are aligned with the gate; depositing a metal oxide semiconductor layer on the transparent electrode layer; performing etching on the semiconductor layer, the source, and the drain, so that outer ends of the source and the drain are exposed out of the metal oxide semiconductor layer; and depositing a passivation layer and leading out the source and the drain.

Abstract: A double-sided display and a method of manufacturing the double-side display are provided. The double-sided display includes a substrate having a plurality of holes penetrating through the substrate, a TFT driving circuit, a front-side light-emitting structure, a back-side light-emitting structure, and a plurality of driving electrodes. The front-side and the back-side light-emitting structures are respectively disposed on two opposite sides of the substrate. The TFT driving circuit is disposed on one of the two opposite sides, and the driving electrodes are disposed on the other one of the two opposite sides. The TFT driving circuit is configured to drive one of the front-side and back-side light-emitting structures to display images, and is further configured to drive the other one of the front-side and back-side light-emitting structures to display images in cooperation with the driving electrodes connected to the TFT driving circuit via the holes.

Abstract: An optical fiber connector includes a fixing module, an optical fiber ferrule positioned at an end of the fixing module, and an optical fiber gripped in the fixing module. The optical fiber ferrule axially defines a through hole. An end surface of the optical fiber includes an arc surface. The optical fiber is received in the through hole of the optical ferrule.