Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A power system energy management system with dynamic state estimation (DSE) is disclosed wherein system dynamic states are estimated using SCADA measurements, PMU measurements, signals of controllers, digital recorders, protection devices, and smart electronic devices. The DSE is solved first by Unscented Kalman Filter, and if the Unscented Kalman Filter is failed, weighted lease square is used to solve the DSE. If weighted lease square is failed, integration method is used to calculate the dynamic states. In another aspect, Unscented Kalman Filter, weighted lease square, and integration calculation are applied to solve the DSE by nodal parallel computing for each generation system.

Abstract: A circuit board includes a plurality of signal contact pads each electrically contacting a contact point of one of a plurality of signal terminals and a non-conductive through hole extending through the circuit board in an interval area between a pair of adjacent signal contact pads of the plurality of signal contact pads.

Abstract: An industrial device matching method and apparatus are used for acquiring a corresponding relationship between industrial devices in different industrial data sources to provide basis for industrial data analysis. The method, in an embodiment, includes collecting data of at least two industrial data sources; determining a first relationship between various industrial devices in each industrial data source, and determining a first relationship topology between the industrial devices in the industrial data source; and comparing the first relationship topologies corresponding to various industrial data sources, to determine a first corresponding relationship between industrial devices in industrial data sources, the first corresponding relationship enabling the first relationship topologies corresponding to at least two industrial data sources to be similar.

Abstract: Methylene blue (MB) derivatives selectively detect F? by desilylation reaction to act as a fluorescent probe.

Abstract: The present invention discloses a drain plug linkage arrangement including a pull rod assembly, an operating rod, a drain plug, and a drain pipe, wherein the drain plug is movably mounted in the drain pipe. The pull rod assembly includes a pull rod and a connecting rod, wherein the pull rod is connected to the connecting rod via a button. A first end of the operating rod is inserted into the drain pipe from a sidewall of the drain pipe and is connected to the drain plug. The operating rod is connected to the connecting rod of the pull rod assembly. Assembly and disassembly between the pull rod and the connecting rod disclosed in the present invention are very convenient.

Abstract: Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Here we disclose a metal-based heterostructure platform to produce these Majorana zero modes which utilizes the surface states of certain metals in combination with a ferromagnetic insulator and a superconductor. This platform has the advantage of having a robust energy scale and the possibility of realizing complex circuit designs using lithographic methods. The Majorana zero modes are interrogated using planar tunnel junctions and electrostatic gates to selectively tunnel into designated pairs of Majorana zero modes. We give example of qubit designs and circuits that are particularly suitable for the metal-based heterostructures.

Abstract: A method for forming thermally conductive composition on electronic components comprises three steps, (I) preparing a silicone composition comprising (A) a polyorganosiloxane, (B) a thermally conductive filler and (C) a catalyst, (II) applying the silicone composition on an electronic component of electronic devices, the electronic component generates heat when the electronic devices are working and (III) curing the silicone composition by heat generated by the electronic component

Abstract: Current disclosure discloses a method and device for determining a category directory, and an automatic classification method and device. A user change category message is received. A target change category item is generated based on the user change category message. Previous change category items are analyzed with respect to the target change category item to determine whether an existing category directory needs to be updated.

Abstract: Provided are a composition, a cured polymer material formed from said composition, a method for forming a thermally conductive material on an article and an article having a thermally conductive material. Said thermally conductive material can be formed on an electronic device, and can be peeled off from said electronic device.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: The invention provides a signal synchronization device, which obtains electrocardiographic, heart sound signal calibration factors by performing time domain and frequency domain transformations for an electrocardiographic signal and a heart sound signal, and thereby performs calibration for the electrocardiographic signal and the heart sound signal to synchronize the electrocardiographic signal and the heart sound signal in time domain, such that a diagnosis rate for cardiovascular disease is increased. Moreover, the invention further provides a stethoscope with signal synchronization processing, an auscultation information output system and a symptom diagnosis system capable of signal synchronization.

Abstract: A UV curable silicone composition, comprising: A) an alkenyl-containing organopolysiloxane that has at least two alkenyl groups in each molecule, at least one alkenyl group on each terminus; B) a photoinitiator; C) a mercapto-functional organopolysiloxane that comprises 2 or more mercapto groups per molecule; D) a pigment; and one or both of E) and F), where E) is a silica and F) is a solvent comprising a organopolysiloxane having ?12 silicon atoms.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: receiving a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type; introducing an agent onto the first epitaxy region and the second epitaxy region, wherein the agent is selectively deposited to the second epitaxy region; selectively depositing a first metal layer on the first epitaxy region; and depositing a second metal layer on the first epitaxy region and the second epitaxy region. A semiconductor structure according to the method is also provided.

Abstract: This application discloses a flexible substrate device that includes a flexible substrate and a plurality of electronic devices. The flexible substrate includes a top surface and a bottom surface opposite to the top surface, and the plurality of electronic devices formed on the top surface of the flexible substrate. The bottom surface further includes one or more strong adhesion regions and one or more normal adhesion regions that are distinct from the one or more strong adhesion regions. Each of the one or more strong adhesion regions and the one or more normal adhesion regions are configured to attach to a rigid carrier with first adhesion strength and second adhesion strength, respectively. The first adhesion strength is substantially larger than the second adhesion strength. In some embodiments, the flexible substrate device is a thin film transistor (TFT) device, and the plurality of electronic devices includes a TFT array.

Abstract: A high-density fiber array unit includes a plurality of substrates arranged and connected in an array, a side plate arranged at one side of the plurality of substrates and connected to one of the plurality of substrates, and a plurality of fibers. Each substrate comprises a first surface and a second surface opposing the first surface, and the first surface defines positioning grooves. The side plate is connected to the first surface of one of the substrates, and each fiber can be fixed to and held by a positioning groove. A fiber array apparatus including the fiber array unit is also provided.

Abstract: A high-density fiber array unit includes a plurality of substrates arranged and connected in an array, a side plate arranged at one side of the plurality of substrates and connected to one of the plurality of substrates, and a plurality of fibers. Each substrate comprises a first surface and a second surface opposing the first surface, and the first surface defines positioning grooves. The side plate is connected to the first surface of one of the substrates, and each fiber can be fixed to and held by a positioning groove. A fiber array apparatus including the fiber array unit is also provided.

Abstract: A brush assembly includes a circuit board, at least two brushes, power connecting terminals for connecting with an external power supply, and a power supply branch circuit connected in series between a corresponding one of the power connecting terminals and a corresponding one of the brushes. The brush assembly further comprises an EMI suppressor connected between the power supply branch circuit and ground. The EMI suppressor is an axial capacitor formed by a conductor core, a cover, and a filling medium. The cover is attached around the conductor core, and the filling medium is filled between the conductor core and the cover. A motor utilizing the brush assembly is also provided.

Abstract: A capacitive touchscreen includes a substrate and a transparent conductive layer arranged on the substrate. The conductive layer includes a sensing area having a first side and a second side opposite to the first side. The capacitive touchscreen further includes multiple transparent and conductive first electrodes, multiple transparent and conductive second electrodes, and transparent and nonconductive patterns. Each first electrode includes a first trunk extending from the first side toward the second side. Each second electrode includes a second trunk and a wiring coupled to the second trunk. Both the second trunk and the wiring of each second electrode extend from the first side toward the second side. Each second trunk cooperates with a corresponding first trunks to be operable to sense a touched position. The transparent and nonconductive patterns are located between the first and second electrodes to electrically isolate the first electrodes from the second electrodes.

Abstract: The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.