Abstract: A system and method for providing probabilistic-based lane-change decision making and motion planning that include receiving data associated with a roadway environment of an ego vehicle. The system and method also include performing gap analysis to determine at least one gap between neighboring vehicles that are traveling within the target lane to filter out an optimal merging entrance for the ego vehicle to merge into the target lane and determining a probability value associated with an intention of a driver of a following neighboring vehicle to yield to allow the ego vehicle to merge into the target lane. The system and method further include controlling the ego vehicle to autonomously continue traveling within the current lane or autonomously merge from current lane to the target lane based on at least one of: if the optimal merging entrance is filtered out and if the probability value indicates an intention of the driver to yield.

Abstract: A pair of vertical fin field effect transistors (FinFETs) having different gate lengths, includes, a first bottom source/drain on a first region of a substrate, wherein the first bottom source/drain includes a first tier having a first height adjacent to a first vertical fin and a second tier having a second height greater than the first tier removed from the first vertical fin; and a second bottom source/drain on a second region of the substrate, wherein the second bottom source/drain includes a third tier having a third height adjacent to a second vertical fin and a fourth tier having a fourth height greater than the third tier removed from the second vertical fin, wherein the third height is less than the first height and the fourth height is equal to the second height.

Abstract: An OLED display substrate, a display panel, a display device, a manufacturing method and a fingerprint identification module are provided. The OLED display substrate includes a microporous light-shielding pattern arranged between adjacent pixel regions and including a plurality of pinholes. The microporous light-shielding pattern is arranged at a same layer as, and insulated from, a nontransparent electrode of the OLED display substrate.

Abstract: Disclosed are an alignment mask, a metal mask assembly, and a preparation method therefor. The alignment mask includes a mask body. The mask body includes: multiple alignment holes; and, separating parts surrounding at least some alignment holes and used for separating the areas at where the at least some alignment holes are located from other areas, where the separation parts include at least one semi-etched line.

Abstract: Provided is a mask, including: a plurality of mask pattern regions, a transition region disposed between the plurality of mask pattern regions, and a mask marginal region surrounding the plurality of mask pattern regions and the transition region; wherein the transition region includes at least one first half-etched sub-region with a thickness less than a thickness of the mask marginal region.

Abstract: A method of forming stacked fin field effect devices is provided. The method includes forming a layer stack on a substrate, wherein the layer stack includes a first semiconductor layer on a surface of the substrate, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, a separation layer on the third semiconductor layer, a fourth semiconductor layer on the separation layer, a fifth semiconductor layer on the fourth semiconductor layer, and a sixth semiconductor layer on the fifth semiconductor layer. The method further includes forming a plurality of channels through the layer stack to the surface of the substrate, and removing portions of the second semiconductor layer and fifth semiconductor layer to form lateral grooves.

Abstract: The embodiments of the present application relates to a camera, comprising a first housing, a stitching lens mechanism, and a driving assembly. The stitching lens mechanism is mounted in the first housing, and the stitching lens mechanism comprises at least two first assemblies, the first lens assembly comprises a first lens, a first included angle is formed between at least two first lenses. A driving assembly is connected to the first lens assembly through a rotating assembly. At least two first lenses are distributed in a first plane, the first housing is rotatably arranged in a second plane, and the second plane is perpendicular to the first plane. Each of the first lens assemblies takes pictures in different orientations for the same scene, so that the imaging field of view is larger. So that the first housing can rotate under the drive of the driving assembly, that is, the stitching lens mechanism can rotate.

Abstract: Embodiments of the invention include semiconductor devices having a first n-type S/D region, a second n-type S/D region, and a first layer of protective material over the second n-type S/D region, wherein the first layer of protective material includes a first type of material and a second type of material. A second layer of protective material is formed over the first layer of protective material, wherein the second layer of protective material includes an oxide of the second type of material. The devices further include a first p-type S/D region, a second p-type S/D region, and the second layer of protective material over the second p-type S/D region, wherein the second p-type S/D region second layer of protective material includes the first type of material and the second type of material, and wherein the second layer of protective material includes the oxide of the second type of material.

Abstract: Embodiments of the present disclosure provide a display substrate, a display panel, a display device, and a manufacturing method of the display substrate. The display substrate includes a display region and a peripheral region located at an outer side of the display region, and the peripheral region includes a bonding region. The display substrate includes: a base substrate, and a first metal pattern and a second metal pattern which are provided on the base substrate and located in the bonding region, the second metal pattern covers at least a portion of at least one side surface of the first metal pattern, and an activity of a metal of the second metal pattern is weaker than an activity of a metal of the first metal pattern.

Abstract: A mask, a manufacturing method thereof, a fine metal mask, a mask device and a use method thereof are provided. The mask includes at least one opening region and a shielding part surrounding and defining the at least one opening region. The shielding part includes a main part and at least one protrusion, in each opening region, the protrusion is protruded towards the opening region on a side of the main part facing the opening region; the main part includes an edge disposed on a side of the protrusion opposite to the opening region and with an extension direction being a same with an extension direction of the protrusion, he protrusion and a portion of the main part disposed between the edge and the protrusion includes a thinning portion with a thickness being less than a thickness of other portions of the shielding part.

Abstract: Described herein are compositions and methods useful for isolating compositions that repel insects, including mosquitoes.

Abstract: A scene change method and system combining instance segmentation and cycle generative adversarial networks are provided. The method includes: processing a video of a target scene and then inputting the video into an instance segmentation network to obtain segmented scene components, that is, obtain mask cut images of the target scene; and processing targets in the mask cut images of the target scene by using cycle generative adversarial networks according to the requirements of temporal attributes to generate data in a style-migrated state, and generating style-migrated targets with unfixed spatial attributes into a style-migrated static scene according to a specific spatial trajectory to achieve a scene change effect.

Abstract: A request to perform a program operation at a memory device is received. Whether a firmware block record is to be modified to correspond with a device block record is determined based on parameters associated with the program operation. The firmware block record tracks entries of the device block record. Responsive to determining that the firmware block record is to be modified, the firmware block record is modified to correspond with the device block record.

Abstract: A sacrificial gate stack for forming a nanosheet transistor includes a substrate. first, second and third silicon channel nanosheets formed over the substrate, and a first sandwich of germanium (Ge) containing layers disposed between the substrate and first silicon channel nanosheet. The stack also includes a second sandwich of Ge containing layers disposed between the first silicon channel nanosheet and the second silicon channel nanosheet; and a third sandwich of Ge containing layers disposed between the second silicon channel nanosheet and the third silicon channel nanosheet. Each sandwich includes first and second low Ge containing layers surrounding a silicon germanium (SiGe) sacrificial nanosheet that has a higher Ge concentration than the first and second low Ge containing layers.

Abstract: A terrain modeling method that fuses geometric characteristics and mechanical characteristics, and a terrain modeling system are provided in the present invention. The method includes steps of: obtaining color images and depth images of the detected region, performing a terrain semantic segmentation on the color images, and fusing ground semantic information obtained by the semantic segmentation and depth information contained in the depth images at the same time to generate the point clouds; mapping the point clouds to a raster map in a map coordinate system to generate corresponding rasters, and updating the elevation values to the corresponding rasters; and calculating the input images in terms of terra-mechanical characteristics, and updating calculation results to the corresponding rasters to generate a terrain model.

Abstract: The disclosure discloses a touch display panel and a touch display device. The touch display panel includes a cathode and a number of touch electrodes, wherein an interior of at least one touch electrode is hollowed out to reduce a relative area between the cathode and the touch electrode. The relative area between the touch electrode and the cathode of the touch display panel may be reduced by hollowing out the interior of at least one touch electrode, thereby reducing the inductive capacitance between the touch electrode and the cathode.

Abstract: An apparatus and method for pressurizing SiC clad rods of a nuclear core component. A lower end of the rod is sealed with a lower end plug and an upper end of the rod is sealed between the cladding and an external piece of an upper end plug that has a through opening through which a separate internal piece of the upper end plug extends. The internal piece of the upper end plug is initially moveable within the through opening between an upper position that forms a gas tight seal and a lower position that forms a gaseous path through the through opening. The rod is placed in a pressure chamber pressurized to a desired pressure. When the pressure is reduced within the pressure chamber the internal pressure in the rod biases the internal piece of the upper end plug in the upper sealed position.

Abstract: A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate. An oxide layer is formed between the bottom substrate portion of each fin and the isolation layer, with a space between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer. A gate dielectric, protruding into the space and in contact with the middle portion, is formed over the one or more fins and has a portion formed from a material different from the oxide layer.

Abstract: Disclosed is a method for manufacturing free-standing cladding tubes with multi-layer structures. According to the method, a cylindrical mandrel substrate defining a hollow cylindrical inner space is provided. A first cold spray powder metal is selected. The cylindrical mandrel substrate is rotated and the first cold spray powder metal is applied to an outer surface of the cylindrical mandrel substrate to form a first layer. The cylindrical mandrel substrate is removed.

Abstract: Embodiments of the invention include semiconductor devices having a first n-type S/D region, a second n-type S/D region, and a first layer of protective material over the second n-type S/D region, wherein the first layer of protective material includes a first type of material and a second type of material. A second layer of protective material is formed over the first layer of protective material, wherein the second layer of protective material includes an oxide of the second type of material. The devices further include a first p-type S/D region, a second p-type S/D region, and the second layer of protective material over the second p-type S/D region, wherein the second p-type S/D region second layer of protective material includes the first type of material and the second type of material, and wherein the second layer of protective material includes the oxide of the second type of material.