Patents by Inventor Peng Yi

Peng Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100019263
    Abstract: A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure.
    Type: Application
    Filed: July 20, 2009
    Publication date: January 28, 2010
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: YING CHAO YEH, SHIH CHENG HUANG, PO MIN TU, WEN YU LIN, PENG YI WU, SHIH HSIUNG CHAN
  • Publication number: 20090321780
    Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.
    Type: Application
    Filed: June 25, 2009
    Publication date: December 31, 2009
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: SHIH CHENG HUANG, PO MIN TU, YING CHAO YEH, WEN YU LIN, PENG YI WU, CHIH PENG HSU, SHIH HSIUNG CHAN
  • Publication number: 20090315067
    Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
    Type: Application
    Filed: June 22, 2009
    Publication date: December 24, 2009
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: SHIH CHENG HUANG, PO MIN TU, YING CHAO YEH, WEN YU LIN, PENG YI WU, SHIH HSIUNG CHAN
  • Publication number: 20090224283
    Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.
    Type: Application
    Filed: March 3, 2009
    Publication date: September 10, 2009
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: SHIH CHENG HUANG, PO MIN TU, YING CHAO YEH, WEN YU LIN, PENG YI WU, CHIH PENG HSU, SHIH HSIUNG CHAN
  • Publication number: 20090166650
    Abstract: A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material.
    Type: Application
    Filed: December 24, 2008
    Publication date: July 2, 2009
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: SHIH CHENG HUANG, PO MIN TU, YING CHAO YEH, WEN YU LIN, PENG YI WU, CHIH PENG HSU, SHIH HSIUNG CHAN
  • Publication number: 20090121214
    Abstract: A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.
    Type: Application
    Filed: November 11, 2008
    Publication date: May 14, 2009
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: Po Min Tu, Shih Cheng Huang, Ying Chao Yeh, Wen Yu Lin, Peng Yi Wu, Chih Peng Hsu, Shih Hsiung Chan
  • Publication number: 20060147506
    Abstract: The present invention relates to foam with the germproof and mildew-proof effects. To produce such foam, Chinese herbaceous extracts are prepared by extracting from angelica-laxiflora, ranunculacese-clematis chinensis, tripterygium wilfordli hook, Atractylodes lancea(Thunb)DC, talc powder, alunite, Cnidium monnieri(L.)Cuss and hydnocarpus anthelmintica P. These extracts are then blended with plastic or rubber material and brought to a foaming treatment. Accordingly, plastic or rubber products with germproof and mildew-proof effects are manufactured, and the effects can be lasted.
    Type: Application
    Filed: January 4, 2005
    Publication date: July 6, 2006
    Inventors: Peng-Yi Kuo, Hsiung-Tsai Sun
  • Publication number: 20050275128
    Abstract: A method for manufacturing foam material for shoes includes the steps of acquiring coconut shells, crushing the coconut shells into small pieces, grinding the coconut shell pieces into coconut fiber powder, mixing the coconut fiber powder with glue as well as foaming material, making the mixture of the coconut fiber powder and the foaming material foam in molds, and finishing, in which the foam mixture are cut into insoles of shoes after having been taken out of the molds, and in which middle soles and outsoles of shoes are directly formed in those the molds that are used for making middle soles and outsoles.
    Type: Application
    Filed: June 15, 2004
    Publication date: December 15, 2005
    Inventors: Li-Chen Hsiao, Chien-Chang Lin, Hui-Ling Wang, Peng-Yi Kuo