Patents by Inventor Peng Yi

Peng Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9544228
    Abstract: A method of aggregation of a source address bunch. The method includes constituting a source address block, associating the source address block to form a source address bunch, and allocating, split, merging, and aggregating the source address bunch.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: January 10, 2017
    Assignee: THE PLA INFORMATION ENGINEERING UNIVERSITY
    Inventors: Dongnian Cheng, Jvlong Lan, Guozheng Cheng, Hailong Ma, Shuqiao Chen, Jianhui Zhang, Baojin Wang, Peng Yi, Fengyu Zhang
  • Publication number: 20160355325
    Abstract: A safe and environmental protection package for tiny battery provides the tiny battery recycled and prevents the children from obtaining and eating by mistake, the technical scheme comprising a bottom cover body and a top cover body; the bottom cover body including a bottom piece body and a containing groove; an exit part disposed in one end of the containing groove and an access groove disposed in the other end thereof; two symmetric low positioning blocks and two symmetric high positioning blocks, by which a containing space is formed with the top cover body; said top cover body including a top piece body, a top groove part, and inserting slit; by applied to the above-mentioned structures, the tiny battery dispose inside the package is removed by inserting the used tiny battery.
    Type: Application
    Filed: June 3, 2015
    Publication date: December 8, 2016
    Inventors: Peng-Yi Kuo, Chung-Chieh Cheng
  • Publication number: 20160326099
    Abstract: The invention generally relates to compounds of formula (I) with neural protective effect, and preparation and uses thereof. The compounds have multiple mechanisms or functions, for example, inhibition of monoamine oxidase and cholinesterase, scavenging of free radicals, and protection of cells such as nerve cells. The compounds can be used for manufacture of medicaments of cell protection, for prevention and/or treatment of monoamine oxidase, cholinesterase and free radicals related diseases, for example, neurodegenerative diseases such as Alzheimer's disease, Parkinson's disease and stroke, and free-radical related diseases such as heart disease, myocardial ischemia, diabetes and other cardiovascular and cerebrovascular diseases.
    Type: Application
    Filed: March 20, 2015
    Publication date: November 10, 2016
    Applicant: GUANGZHOU MAGPIE PHARMACEUTICAL CO., LTD
    Inventors: Yuqiang WANG, Moussa B.H. YOUDIM, Yewei SUN, Zaizun ZHANG, Gaoxiao ZHANG, Pei YU, Peng YI, Ming LANG, Wei LIU
  • Publication number: 20160226039
    Abstract: A safe package of micro battery with used battery recycling function, which can prevent the children from taking the micro battery easily and swallowed by mistake, comprising a lower cover plate, a folding portion, and an upper cover plate, the same side edge of said lower cover plate and said upper cover plate respectively connected with corresponding side of folding portion; said folding portion configure to fold the upper cover plate in the lower cover plate for fixing integrally and matched mutually; the lower cover plate including a concave part, a insertion slot, an exit slot, and two projecting parts; the upper cover plate including a insertion slit, two sides slits, and an exit slit thereby taking the new micro battery and recycled the used battery via double hands.
    Type: Application
    Filed: February 2, 2015
    Publication date: August 4, 2016
    Applicant: PONI GREENTEK CO., LTD.
    Inventors: Peng-Yi Kuo, Wan-Ting Hung, Shu-Min Lin
  • Patent number: 9082934
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: July 14, 2015
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Peng-Yi Wu, Wen-Yu Lin, Chih-Pang Ma, Tzu-Chien Hong, Chia-Hui Shen
  • Patent number: 8902887
    Abstract: This invention provides a load-balancing structure for packet switches and its constructing method. In this method, the structure based on self-routing concentrators is divided into two stages, that is, a first stage and a second stage fabric. A virtual output group queue (VOGQ) is appended to each input group port of the first stage fabric, and a reordering buffer (RB) is configured behind each output group port of the second stage fabric. Packets stored in the VOGQ are combined into data blocks with preset length, which is divided into data slices of fixed size, finally each data slice is added an address tag and is delivered to the first stage fabric for self-routing. Once reaching the RB, data slices are recombined into data blocks. This invention solves the packet out-of-sequence problem in the load-balancing Birkhoff-von Neumann switching structure and improves the end-to-end throughput.
    Type: Grant
    Filed: October 31, 2009
    Date of Patent: December 2, 2014
    Assignees: Peking University Shenzhen Graduate School, Shanghai Research Institute of Microelectronics (Shrime), Peking University
    Inventors: Hui Li, Wei He, Shuoyan Li, Jiaqing Huang, Jian Chen, Kai Pan, Shuxin Zhang, Peng Yi, Binqiang Wang
  • Patent number: 8866161
    Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: October 21, 2014
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Ying-Chao Yeh, Wen-Yu Lin, Peng-Yi Wu, Shih-Hsiung Chan
  • Publication number: 20140303078
    Abstract: Work described herein provides, in one embodiment, a method for increasing proliferation or replication of pancreatic beta cells in a subject in need thereof, comprising administering to said subject an effective amount of an agent that increases the level or activity of hepatocellular carcinoma-associated protein TD26 (TD26), thereby increasing proliferation or replication of pancreatic beta cells. Such an agent may function by, for example, increasing the level of active TD26 in the subject or by increasing the functional activity of TD26 in the subject.
    Type: Application
    Filed: June 10, 2012
    Publication date: October 9, 2014
    Applicant: President and Fellows of Harvard College
    Inventors: Douglas A. Melton, Peng Yi
  • Publication number: 20140220655
    Abstract: Articles and methods for forming nanostructures having unique and/or predetermined shapes are provided. The methods and articles may involve the use of nucleic acid containers as structural molds. For instance, a pre-designed nucleic acid container including a cavity may be used to control the shape-specific growth of nanoparticles. Growth of the nanoparticles within the cavities may be confined by the specific shape of the nucleic acid container. In some embodiments, the resulting nucleic acid-nanoparticle structures can be used to control the orientation and numbers of surface ligands on the surface of nanoparticles. The addressability of the surface ligands can be used to form higher ordered assemblies of the structures.
    Type: Application
    Filed: June 29, 2012
    Publication date: August 7, 2014
    Applicant: President and Fellows of Harvard College
    Inventors: Wei Sun, Peng YI
  • Publication number: 20140027806
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.
    Type: Application
    Filed: September 26, 2013
    Publication date: January 30, 2014
    Inventors: SHIH-CHENG HUANG, PO-MIN TU, PENG-YI WU, WEN-YU LIN, CHIH-PANG MA, TZU-CHIEN HUNG, CHIA-HUI SHEN
  • Patent number: 8580590
    Abstract: A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: November 12, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Ying-Chao Yeh, Wen-Yu Lin, Peng-Yi Wu, Shih-Hsiung Chan
  • Publication number: 20130297824
    Abstract: A method of aggregation of a source address bunch. The method includes constituting a source address block, associating the source address block to form a source address bunch, and allocating, split, merging, and aggregating the source address bunch.
    Type: Application
    Filed: July 1, 2013
    Publication date: November 7, 2013
    Inventors: Jvlong LAN, Dongnian CHENG, Guozheng CHENG, Hailong MA, Shuqiao CHEN, Jianhui ZHANG, Baojin WANG, Peng YI, Fengyu ZHANG
  • Patent number: 8574939
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: November 5, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih Cheng Huang, Po Min Tu, Peng Yi Wu, Wen Yu Lin, Chih Pang Ma, Tzu Chien Hong, Chia Hui Shen
  • Publication number: 20130248922
    Abstract: A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.
    Type: Application
    Filed: May 20, 2013
    Publication date: September 26, 2013
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Chester KUO, Lung-Hsin CHEN, Wen-Liang TSENG, Shih-Cheng HUANG, Po-Min TU, Ying-Chao YEH, Wen-Yu LIN, Peng-Yi WU, Shih-Hsiung CHAN
  • Patent number: 8513696
    Abstract: A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: August 20, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Po Min Tu, Shih Cheng Huang, Ying Chao Yeh, Wen Yu Lin, Peng Yi Wu, Shih Hsiung Chan
  • Patent number: 8470621
    Abstract: A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: June 25, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chester Kuo, Lung Hsin Chen, Wen Liang Tseng, Shih Cheng Huang, Po Min Tu, Ying Chao Yeh, Wen Yu Lin, Peng Yi Wu, Shih Hsiung Chan
  • Publication number: 20120190141
    Abstract: A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
    Type: Application
    Filed: March 30, 2012
    Publication date: July 26, 2012
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: SHIH-CHENG HUANG, PO-MIN TU, YING-CHAO YEH, WEN-YU LIN, PENG-YI WU, SHIH-HSIUNG CHAN
  • Patent number: 8217400
    Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: July 10, 2012
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih Cheng Huang, Po Min Tu, Ying Chao Yeh, Wen Yu Lin, Peng Yi Wu, Shih Hsiung Chan
  • Publication number: 20120173731
    Abstract: A system and a method for starting a cloud computing service according to a user location are disclosed, the system comprises an authentication server, a central management server, a central database management server, a central storage server, a local management server, a local computing server, and a local storage server to determine a user access location, and to distribute cloud computing resources, thereby providing a simple, convenient and efficient cloud computing service.
    Type: Application
    Filed: December 29, 2011
    Publication date: July 5, 2012
    Applicant: CHUNGHWA TELECOM CO., LTD.
    Inventors: Hsiu Min Lin, Hsiao Feng Yeh, Cheng Ju Yu, Chih Cheng Chien, Peng Yi Lai
  • Patent number: 8202752
    Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: June 19, 2012
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih Cheng Huang, Po Min Tu, Ying Chao Yeh, Wen Yu Lin, Peng Yi Wu, Shih Hsiung Chan