Abstract: A method of fabrication of an integrated circuit is provided, including: providing a substrate including a first active layer and a first metallic level of interconnection arranged on top of the active layer and including first lines of interconnection separated by a first filling of sacrificial material; forming a superposition of an insulator layer and second lines of interconnection; providing access to the first filling through the insulator layer; filling the provided access with a second filling of sacrificial material; forming a second active layer on top of the second metallic level of interconnection; providing access to the second filling through the second active layer; and removing the first and the second fillings by a chemical etching through the provided access to the second filling.

Abstract: Integrated circuit provided with several superimposed levels of transistors including: an upper level provided with transistors with a rear gate electrode laid out on a first semiconducting layer and a second semiconducting layer, a first transistor among said transistors of said upper level being provided with a contact pad traversing the second semiconducting layer, said contact pad being connected to a connection zone arranged between the first semiconducting layer and the second semiconducting layer, the first transistor being polarised by and connected to at least one power supply line arranged on the side of a front face of the second semiconducting layer opposite to said rear face.

Abstract: Method for producing a device provided with FinFET transistors, comprising the following steps: a) making amorphous and doping a first portion of a semiconductor in via a tilted beam oriented toward a first lateral face of the fin, while retaining a first crystalline semiconductor block against a second lateral face of the fin, then b) carrying out at least one recrystallization annealing of said first portion, then c) making amorphous and doping a second portion via a tilted beam oriented toward the second lateral face of the fin, while retaining a second crystalline semiconductor block against said first lateral face of the fin, then d) carrying out at least one recrystallization annealing of the second portion.

Abstract: Production of an integrated circuit provided with several superposed levels of transistors, comprising: providing a structure provided with transistors of a lower level covered by an insulating layer itself covered by a stack with a first doped semi-conducting layer according to a doping of a first type, and a second doped semi-conducting layer according to a doping of opposite type, the first doped semi-conducting layer and the second doped semi-conducting layer being superposed and in contact with one another, etching the stack so as to form, on the insulating layer, a first block and a second block, then, removing in a given zone of the second block, the second given doped semi-conducting layer, forming a first gate on the second doped semi-conducting layer of the first block and a second gate on the first doped semi-conducting layer of the second block.

Abstract: Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.

Abstract: Method including the steps consisting in: forming source and drain semiconductor blocks comprising a first layer based on a first crystalline semiconductor material surmounted by a second layer (16) based on a second crystalline semiconductor material different from the first semiconductor material, making amorphous and selectively doping the second layer (16) by means of one or more implantation(s), carrying out a recrystallisation of the second layer and an activation of dopants by means of at least one thermal annealing.

Abstract: A method of fabrication of an integrated circuit is provided, including: providing a substrate including a first active layer and a first metallic level of interconnection arranged on top of the active layer and including first lines of interconnection separated by a first filling of sacrificial material; forming a superposition of an insulator layer and second lines of interconnection; providing access to the first filling through the insulator layer; filling the provided access with a second filling of sacrificial material; forming a second active layer on top of the second metallic level of interconnection; providing access to the second filling through the second active layer; and removing the first and the second fillings by a chemical etching through the provided access to the second filling.

Abstract: Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.

Abstract: A method for producing a microelectronic device with one or more transistor(s) including forming a first gate on a region of a semiconductor layer, forming a first cavity in the semiconductor layer, the first cavity having a wall contiguous with the given region, filling the first cavity in such a way as to form a first semiconductor block wherein a source or drain region of the first transistor is capable of being produced, by epitaxial growth of a first semiconductor material in the first cavity, the growth being carried out such that a first zone of predetermined thickness of the layer of first semiconductor material lines the wall contiguous with the given region, epitaxial growth of a second zone made of a second semiconductor material on the first zone.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.

Abstract: A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.

Abstract: A method is provided for forming a transistor from a stack including the following successive layers: an electrically insulating layer, an active zone including at least one semiconductor layer, and a gate, sides of which are configured to be covered by at least one spacer, the method including: a phase of forming lateral cavities; and forming a raised drain and a raised source that fill the lateral cavities by growing the semiconductor layer via epitaxy, the forming of the lateral cavities includes, after a step of partially removing the semiconductor layer: forming a sacrificial layer, partially removing the sacrificial layer; forming spacers against the sides of the gate resting on a residual sacrificial layer; and totally removing the residual sacrificial layer in order to form the lateral cavities.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.

Abstract: The invention concerns a method for producing a transistor. The gate of the transistor is produced after having produced source and drain electrodes of the transistor. From a substrate having a stack of layers comprising at least two surface layers with a first layer of a first semiconductor material intended to produce a conduction channel of the transistor, and a second layer of a second semiconductor material situated on the first layer and intended to at least partly produce the source and drain electrodes of the transistor, the formation of a mask defining a cavity of a gate pattern and the creation of lateral recesses at the periphery of the gate pattern in the second layer and under the mask by an isotropic etching of the second material, and in that it comprises a filling of the lateral recesses with a dielectric material so as to form gate spacers therein.

Abstract: Method including the steps consisting in: forming source and drain semiconductor blocks comprising a first layer based on a first crystalline semiconductor material surmounted by a second layer (16) based on a second crystalline semiconductor material different from the first semiconductor material, making amorphous and selectively doping the second layer (16) by means of one or more implantation(s), carrying out a recrystallisation of the second layer and an activation of dopants by means of at least one thermal annealing.

Abstract: Method for fabricating a transistor comprising the steps consisting of: forming sacrificial zones in a semi-conductor layer, either side of a transistor channel zone, forming insulating spacers on said sacrificial zones against the sides of the gate of said transistor, removing said sacrificial zones so as to form cavities, with the cavities extending on either side of said channel zone and penetrating under said spacers, forming doped semi-conductor material in said cavities, with said semi-conductor material penetrating under said spacers.

Abstract: Method of making an integrated circuit, comprising at least the following steps: a) form a first semiconducting or conducting element, covered with a first insulating layer on which there is a second semiconducting or conducting element, covered with a second insulating layer; b) form an opening passing through at least the second insulating layer, exposing a portion of the second element and opening up at least partly on the second element or adjacent to the second element; c) form a spacer located at the second element and comprising at least one dielectric material located at least between the second element and the opening; d) prolong the opening through the first insulating layer as far as the first element; and e) fill the opening with at least one conducting material, so as to form a contact. FIG 1G.

Abstract: Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, in-depth amorphization of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphization of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, recrystallization of the source and drain blocks such that the second semiconducting material i

Abstract: A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.

Abstract: Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, in-depth amorphisation of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphisation of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, recrystallisation of the source and drain blocks such that the second semiconducting material i