Patents by Inventor Petar B. Atanackovic

Petar B. Atanackovic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for growth of single-crystal rare-earth oxides, nitrides, and phosphides
    Patent number: 7135699
    Abstract: Structure and method for growing crystalline superlattice rare earth oxides, rare earth nitrides and rare earth phosphides and ternary rare-earth compounds are disclosed. The structure includes a superlattice having a plurality of layers that forming a plurality of repeating units. At least one the layers in the repeating unit is an active layer with at least one species of rare earth ion.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: November 14, 2006
    Assignee: Translucent Photonics, Inc.
    Inventor: Petar B. Atanackovic
  • Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride
    Patent number: 7037806
    Abstract: A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare earth is introduced into a region adjacent the surface of the second semiconductor substrate. The surface of the first semiconductor substrate is bonded to the surface of the second semiconductor substrate in a process that includes annealing to react either the oxygen or the nitrogen with the rare earth to form an interfacial insulating layer of either rare earth oxide or rare earth nitride. A portion of either the first semiconductor substrate or the second semiconductor substrate is removed and the surface polished to form a thin crystalline active layer on the insulating layer.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: May 2, 2006
    Assignee: Translucent Inc.
    Inventor: Petar B. Atanackovic
  • Devices with optical gain in silicon
    Patent number: 7023011
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: April 4, 2006
    Assignee: Translucent, Inc.
    Inventors: Petar B. Atanackovic, Larry R. Marshall
  • Devices with optical gain in silicon
    Patent number: 6858864
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: February 22, 2005
    Assignee: Translucent Photonics, Inc.
    Inventors: Petar B. Atanackovic, Larry R. Marshall
  • Devices with optical gain in silicon
    Publication number: 20040222411
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Application
    Filed: April 16, 2004
    Publication date: November 11, 2004
    Inventors: Petar B. Atanackovic, Larry R. Marshall
  • Devices with optical gain in silicon
    Publication number: 20040188669
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Application
    Filed: April 16, 2004
    Publication date: September 30, 2004
    Inventors: Petar B. Atanackovic, Larry R. Marshall
  • Devices with optical gain in silicon
    Patent number: 6734453
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Grant
    Filed: August 7, 2001
    Date of Patent: May 11, 2004
    Assignee: Translucent Photonics, Inc.
    Inventors: Petar B. Atanackovic, Larry R. Marshall
  • Devices with optical gain in silicon
    Publication number: 20020048289
    Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
    Type: Application
    Filed: August 7, 2001
    Publication date: April 25, 2002
    Inventors: Petar B. Atanackovic, Larry R. Marshall