Abstract: The disclosed invention relates to an amperometric gas sensor for measuring the concentration of an analyte, comprising: a solid support; and a working electrode in contact with the solid support; wherein the analyte comprises a dopant which when in contact with the solid support increases the electrical conductivity of the solid support. A sterilization process employing the amperometric gas sensor is disclosed.

Abstract: In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process.

Abstract: A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.

Abstract: Disclosed are filters, smoking devices, related articles and apparatus, and related methods. The filters include porous masses that have an active particle and a binder particle, wherein the active particle comprises carbon and the porous mass has a carbon loading of at least about 6 mg/mm and an encapsulated pressure drop of about 20 mm of water or less per mm of porous mass.

Abstract: An apparatus for adapting a rocket-assisted artillery projectile of a first caliber for firing from a smooth bore tube of a second caliber may include an adapter for connecting to an aft end of the rocket-assisted artillery projectile. The adapter may include a main channel for receiving rocket exhaust, a plurality of sub-channels that lead from the main channel to an exterior of the adapter, and an ignition channel that leads from the main channel to an ignition delay disposed in the adapter. A tail boom may be fixed to an aft end of the adapter. The tail boom may include an opening in a fore end that communicates with the ignition delay in the adapter. Lifting surfaces, such as fins, may be attached to the tail boom.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.

Abstract: A polyethylene powder has a molecular weight in the range of about 300,000 g/mol to about 2,000,000 g/mol as determined by ASTM-D 4020, an average particle size, D50, between about 300 and about 1500 ?m, and a bulk density between about 0.25 and about 0.5 g/ml. On sintering, the polyethylene powder produces a porous article having a porosity of at least 45% and a pressure drop less than 5 mbar. The porous article is useful in, for example, wastewater aeration and capillary and filtration applications.

Abstract: In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.

Abstract: The invention relates to a combination comprising a Bcr-Abl, c-Kit and PDGF-R tyrosine kinase inhibitor; and one or more pharmaceutically active agents; pharmaceutical compositions comprising said combination; methods of treatment comprising said combination; processes for making said combination; and a commercial package comprising said combination.

Abstract: A microfluidic sensor device includes a substrate having patterned thereon at least one Ag/AgCl electrode (working electrode) and an inner chamber overlying the at least one Ag/AgCl electrode. The device includes an ion selective permeable membrane permeable to TPP+ disposed on one side of the first chamber and a sensing chamber overlying the ion selective permeable membrane. A separate reference electrode is inserted into the sensing chamber. The working electrode and reference electrode are coupled to a voltmeter to measure voltage. This voltage can then be translated into a TPP+ concentration which is used to determine the mitochondrial membrane potential (??m).

Abstract: A pad structure and passivation scheme which reduces or eliminates IMC cracking in post wire bonded dies during Cu/Low-k BEOL processing. A thick 120 nm barrier layer can be provided between a 1.2 ?m aluminum layer and copper. Another possibility is to effectively split up the barrier layer, where the aluminum layer is disposed between the two barrier layers. The barrier layers may be 60 nm while the aluminum layer which is disposed between the barrier layers may be 0.6 ?m. Another possibility is provide an extra 0.6 ?m aluminum layer on the top barrier layer. Still another possibility is to provide an extra barrier layer on the top-most aluminum layer, such that a top barrier layer of 60 nm is provided on a 0.6 ?m aluminum layer, followed by another harrier layer of 60 nm, another aluminum layer of 0.6 ?m and another barrier layer of 60 nm.

Abstract: Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.

Abstract: A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.

Abstract: A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.

Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Abstract: A tobacco smoking device comprises a porous mass of active particles adapted to enhance a tobacco smoke flowing over said active particles and binder particles. The active particles comprises about 1-99% weight of the porous mass, and the binder particles comprises about 1-99% weight of said porous mass. The active particles and said binder particles are bound together at randomly distributed points throughout the porous mass. The active particles have a greater particle size than the binder particles.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: The invention comprises a carbon nanotube switch suitable for use in an integrated circuit structure and capable of being moved from a first position in a first plane in the switch to a second position in a second plane in the switch using approximately the same energy as required to move the switch from the second position back to the first position. The switch comprises a flexible carbon nanotube strip secured clamped at one end in a first plane in a switching chamber, and secured or clamped, at the opposite end of the carbon nanotube, in a second plane in the switching chamber, which is parallel to the first plane but spaced therefrom, to permit the central portion of the carbon nanotube strip to move in the chamber between a first position in the first plane and in electrical contact with one or more first electrodes and a second position in the second plane and in electrical contact with one or more second electrodes.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.