Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Abstract: An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.

Abstract: The present invention is directed to structures and methods of fabricating nanotube electromechanical memory cells having a bottom electrode with a substantially planar contact surface. The bottom electrode is configured so that during the operation of the memory cell the nanotube crossbar of the cell can make contact with a substantially planar surface of the bottom electrode.

Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Abstract: The invention relates to a combination comprising a Bcr-Abl, c-Kit and PDGF-R tyrosine kinase inhibitor; and one or more pharmaceutically active agents; pharmaceutical compositions comprising said combination; methods of treatment comprising said combination; processes for making said combination; and a commercial package comprising said combination.

Abstract: Embodiments of the invention may include a sensor system and a method used to track the behaviors of targets in an area under surveillance. The invention may include a sensor array located in the area that is capable of sending messages to a user when behavior of a tracked target is determined to be anomalous. In making the determination of anomalous behavior, the sensor system and method may generate and continuously refine a pattern of life model that may examine, for example, the paths a target may take within the sensor array and the end points of the paths taken. The sensor system and method may also incorporate any user defined conditions for anomalous behavior.

Abstract: The present invention provides a method of operating a reprocessor that has a chamber for receiving items to be sterilized. The reprocessor is filled with water that has passed through a first and a second filter element that both comprise a filtration system. A liquid sterilant is generated by mixing the water with dry chemical reagents. The liquid sterilant is circulated through a fluid circulation system and the filtration system wherein a portion of the liquid sterilant is directed through a bypass conduit and another portion is directed through the first and second filter elements. After a predetermined exposure time, the reprocessor is drained. Then the reprocessor is filled with water for rinsing that has passed through the first and the second filter elements. The water for rinsing is heated prior to being introduced into the reprocessor.

Abstract: Compositions and methods for deactivating articles contaminated with nanobacteria, generally comprise a dispersant and/or a dissolution agent, and a deactivator. The methods and compositions of the invention are advantageously utilized to decontaminate and/or sterilize various articles such as medical and manufacturing devices or surfaces.

Abstract: Different ways to reduce or eliminate the IMC cracking issues in wire bonded parts, including: changing to more compressive dielectric films for top, R1, and R2; changing the top passivation film stacks to more compressive films; changing the low k film to a higher compressive film; reducing the R layer thickness and pattern density to reduce tensile stress; and minimizing anneal and dielectric deposition temperatures. Each of the methods can be used individually or in combination with each other to reduce overall tensile stresses in the Cu/low-k wafer thus reducing or eliminating the IMC cracking issue currently seen in the post wire bonded parts.

Abstract: A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.

Abstract: The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on the underlying copper line. An opening is formed in the insulating layer to expose a portion of the copper line. The inner surface of the opening in the insulating layer has a dielectric barrier layer formed thereon to prevent the diffusion of copper into the insulating layer. A copper plug is formed to fill the opening and make electrical contact with the underlying copper interconnect structure. Aspects of the invention also include methods for forming the dielectric copper barrier layers and associate copper interconnects to the underlying copper lines.

Abstract: The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on the underlying copper line. An opening is formed in the insulating layer to expose a portion of the copper line. The inner surface of the opening in the insulating layer has a dielectric barrier layer formed thereon to prevent the diffusion of copper into the insulating layer. A copper plug is formed to fill the opening and make electrical contact with the underlying copper interconnect structure. Aspects of the invention also include methods for forming the dielectric copper barrier layers and associate copper interconnects to the underlying copper lines.

Abstract: A microelectronic switch having a substrate layer, an electrically conductive switching layer formed on the substrate layer, an electrically conductive cavity layer formed on the switching layer, an electrically conductive cap layer formed on the cavity layer, the cap layer forming a first electrode and a second electrode that are physically and electrically separated one from another, and which both at least partially overlie the switching layer, and a cavity disposed between the switching layer and the second electrode, where the switching is layer is flexible to make electrical contact with the second electrode by flexing through the cavity upon selective application of an electrical bias.

Abstract: A node in for connection to a synchronous packet network includes a packet switch and a physical interface for connection to the packet network. A phase locked loop arrangement for synchronization is integrated into the physical interface, the packet switch or both.

Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Abstract: When microbial contamination is introduced into a room (20*) of an enclosure, such as a building, an HVAC system including supply ductwork (16) and a return ductwork (34) is decontaminated with hydrogen peroxide vapor. A decontamination controller (46) operates controllable baffles (22) at outlet registers (20), temporary controllable baffles (44) at inlet registers (30), and a blower system (10) to circulate hydrogen peroxide vapor from hydrogen peroxide vapor generators (42) through the ductwork in both forward and reverse directions. Further, at least portions of the baffles are closed to create dwell times in which the hydrogen peroxide vapor resides in the ductwork with minimal or turbulent flow.

Abstract: When microbial contamination is introduced into a room (20*) of an enclosure, such as a building, an HVAC system including supply ductwork (16) and a return ductwork (34) is decontaminated with hydrogen peroxide vapor. A decontamination controller (46) operates controllable baffles (22) at outlet registers (20), temporary controllable baffles (44) at inlet registers (30), and a blower system (10) to circulate hydrogen peroxide vapor from hydrogen peroxide vapor generators (42) through the ductwork in both forward and reverse directions. Further, at least portions of the baffles are closed to create dwell times in which the hydrogen peroxide vapor resides in the ductwork with minimal or turbulent flow.

Abstract: Systems and methods for synthesizing long carbon nanotubes and using the nanotube as an electrical conductor. A substrate is provided with one or more metal underlayer platforms that allow the nanotube to grow freely suspended from the substrate. A modified gas-flow injector is used to reduce the gas flow turbulence during nanotube growth. Nanotube electrodes are formed by growing arrays of aligned nanotubes between two metal underlayer platforms.

Abstract: A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.

Abstract: The present invention relates to a direct smelting plant and a direct smelting process for producing molten metal from a metalliferous feed material, such as ores, partly reduced ores, and metal-containing waste streams, the latter of which comprising the steps of (a) pretreating metalliferous feed material in a pretreatment unit and producing pretreated feed material having a temperature of at least 200° C., (b) storing pretreated metalliferous feed material having a temperature of at least 200° C. under pressure in a hot feed material storage means, (c) transferring pretreated metalliferous feed material having a temperature of at least 200° C. under pressure in a hot feed material transfer line to a solids delivery means of a direct smelting vessel, and (d) delivering pretreated metalliferous feed material into the direct smelting vessel and smelting metalliferous feed material to molten metal in the vessel.