Abstract: A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer.

Abstract: A method and apparatus for equalizing gain in an array of electron multiplication (EM) pixels is disclosed, each pixel having one or more impact ionization gain stages with implants to achieve charge transfer directionality and comprising a phase 1 clocked gate, an EM clocked gate, and two DC gates formed between the phase 1 clocked gate and the EM clocked gate, comprising the steps of (a) applying initial voltages to each of the DC gates and the EM clocked gates of at least two pixels of a plurality of pixels; (b) clocking phase 1 clock gates and an EM clock gates associated with the at least two pixels of the plurality of pixels a predetermined number of times to achieve an average pixel intensity value after impact ionization gain; and (c) selectively adjusting the difference in voltage between the DC gate and corresponding EM clocked gate of the at least two pixels of the plurality of pixels until the difference between the resulting pixel intensity values and the average pixel intensity value needed to p

Abstract: An actively driven, metal light shield for shielding floating diffusion regions and amplifiers of multi-port CCD or CMOS imager arrays from unwanted light is disclosed. The driven shield overlies one or more floating diffusion regions and buffer amplifiers lying outside the active pixel area of the imager (non-imaging area), which is also protected from unwanted light by a fixed potential shield. The driven shield is directly electrically connected to a source node of a source-follower amplifier stage, i.e., the buffer amplifiers non-inverting output. The fixed potential shield is electrically connected to a DC voltage capable of eliminating charging of the fixed potential shield and substantially overlies the non-imaging area and at least partially overlapping the driven shield.

Abstract: Methods and apparatus for imaging light are disclosed. Light is imaged by collecting light, converting the collected light into a electrical charge signal, multiplying the electrical charge signal to produce multiple electrical charge signals with associated levels of gain, converting the electrical charge signals to voltage signals, and developing an output signal from one or more of the voltage signals that represents the collected light. The electrical charge signal may be multiplied using an electron multiplication device associated with multiple taps to produce the electrical charge signal with different levels of gain.

Abstract: A circuit and method for reducing noise in video imagers which takes advantage of the fact that the same image information is present in the drain current in a reset transistor used to reset a photodiode in a pixel as is present in the readout current. The noise is reduced by passing the multiplexed output voltage from the source follower output transistor in an APS imager system through a high pass filter to reduce the low frequency noise from the source follower. The drain current in the reset transistor used to reset the APS is passed through a low pass filter. The low pass filter output and the high pass filter output are then combined. Since the drain current in the reset transistor contains the same image information as the voltage output of the source follower output transistor the image information can be obtained by combining the output of the low pass filter and the output of the high pass filter.

Abstract: Methods and apparatus for imaging spectral lines are disclosed. Spectral lines are imaged using an imager that includes photosensitive cells. The photosensitive cells are arranged to form channels including banks of photosensitive cells. Horizontal blooming barriers and drains are coupled to one or more of the banks to limit accumulated charge in the banks such that the amount of charge accumulated and retained in at least one subsequent bank is incrementally increased. Charge is accumulated for spectral lines that are received by the channels to image those spectral lines.

Abstract: An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.

Abstract: A video imaging system includes an imaging array having a plurality of picture elements (pixels) formed in a substrate. An analog to digital converter formed in the substrate converts signals from the pixels into digital pixel signals. A defect detection circuit formed in said substrate provides a defective pixel output signal indicating, as the digital pixel signal corresponding to the pixels is processed, if any one pixel of the plurality of pixels in the imaging array is defective. The video imaging system includes a defect substitution circuit, also formed in the substrate, that substitutes a corrected pixel for any defective pixel. The video imaging system is responsive to a gain control signal to adjusts the pixels in magnitude. The gain control signal is applied to the first circuit to control the analysis of the pixel to determine if it is defective.

Abstract: A method and apparatus for generating charge from a light pulse. In one example, a light sensor includes an active region for generating an electric charge in response to a light pulse. A drift region is formed within a substrate and receives the electric charge from the light sensor. A spatial charge distribution is produced within the drift region in response to an electric field. The drift region includes an outer edge and an inner edge. The volume of the drift region decreases from the outer edge to the inner edge.

Abstract: A method and apparatus for generating charge from a light pulse. In one example, a light sensor includes an active region for generating an electric charge in response to a light pulse. A drift region is formed within a substrate and receives the electric charge from the light sensor. A spatial charge distribution is produced within the drift region in response to an electric field. The drift region includes an outer edge and an inner edge. The volume of the drift region decreases from the outer edge to the inner edge.

Abstract: A circuit and method for reducing noise in video imagers which takes advantage of the fact that the same image information is present in the drain current in a reset transistor used to reset a photodiode in a pixel as is present in the readout current. The noise is reduced by passing the multiplexed output voltage from the source follower output transistor in an APS imager system through a high pass filter to reduce the low frequency noise from the source follower. The drain current in the reset transistor used to reset the APS is passed through a low pass filter. The low pass filter output and the high pass filter output are then combined. Since the drain current in the reset transistor contains the same image information as the voltage output of the source follower output transistor the image information can be obtained by combining the output of the low pass filter and the output of the high pass filter.

Abstract: A method and apparatus for resolving relative times-of-arrival of a plurality of light pulses includes a plurality of drift-field detectors. Each drift-field detector includes a light sensor and a semiconductor drift region. Each light sensor generates an electrical charge from at least one of the plurality of light pulses. Each semiconductor drift region receives the electrical charge from its respective light sensor and, pursuant to an electric field therein, produces a spatial charge distribution. The spatial charge distribution for each of the semiconductor drift regions is stored in an analog storage device associated therewith. The relative positions of the charge distributions in the semiconductor drift regions are used to calculate the relative times-of-arrival of the light pulses.

Abstract: A method and apparatus for resolving relative times-of-arrival of a plurality of light pulses includes a plurality of drift-field detectors. Each drift-field detectors includes a light sensor and a semiconductor drift region. Each light sensor generates an electrical charge from at least one of the plurality of light pulses. Each semiconductor drift region receives the electrical charge from its respective light sensor and, pursuant to an electric field therein, produces a spatial charge distribution. The spatial charge distribution for each of the semiconductor drift regions is stored in an analog storage device associated therewith. The relative positions of the charge distributions in the semiconductor drift regions are used to calculate the relative times-of-arrival of the light pulses.

Abstract: A three-dimensional imaging range finder is disclosed using a transmitted pulse reflected from a target. The range finder includes a pixel sensor for receiving light from the target and the reflected pulse. A global counter is provided for determining a time-of-flight value of the transmitted pulse by providing accurate count data to pixel memories. A processing circuit, which is coupled to the pixel sensor and the global counter, extracts the reflected pulse received by the pixel sensor, and stores the time-of-flight value upon extracting the reflected pulse. The pixel sensor provides a luminance signal and the processing circuit includes a high pass filter to extract the reflected pulse from the luminance signal.

Abstract: A novel method and apparatus is disclosed that is able to extend the intra-scene dynamic range of Time Delay and Integrate Charge-Coupled Device imagers. In accordance with the principles of the invention, the charge collected and accumulated over a plurality of photosensitive devices is limited by adjusting the barrier levels at which collected accumulated charge is removed from the photosensitive devices. By limiting the amount of accumulated charge that is collected, images of high intensity are prevented from overflowing or saturating the photosensitive devices. Thus, information that is included in the brighter levels of the image is not lost because of clipping the photosensitive device to prevent saturation. In one embodiment of the invention, the blooming barrier levels are adjusted in a step-wise linear manner to allow a known amount of charge to be retained during the initial collection phase while allowing progressively greater amounts of charge to be retained as the collection phase proceeds.

Abstract: A method and apparatus for low light imaging in which a plurality of relatively small detectors forming a line is coupled to a respective cell of a CCD register. A charge indicative of detected image information is provided to the respective cells after the cells are substantially discharged via a drain. The register is read by a control element to define therefrom a row of pixel information.

Abstract: A video imaging system includes an imaging array having a plurality of picture elements (pixels) formed in a substrate. An analog to digital converter formed in the substrate converts signals from the pixels into digital pixel signals. A defect detection circuit formed in said substrate provides a defective pixel output signal indicating, as the digital pixel signal corresponding to the pixels is processed, if any one pixel of the plurality of pixels in the imaging array is defective. The video imaging system includes a defect substitution circuit, also formed in the substrate, that substitutes a corrected pixel for any defective pixel. The video imaging system is responsive to a gain control signal to adjusts the pixels in magnitude. The gain control signal is applied to the first circuit to control the analysis of the pixel to determine if it is defective.