Abstract: A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. One of the two measurements is of resistance per unit length. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

Abstract: A method that is sensitive to lattice damage (also called “primary method”) is combined with an additional method that independently measures one of two parameters to which the primary method is sensitive namely dose and energy. In some embodiments, the additional method is sensitive to dose, and in two such embodiments 4PP and SIMS are respectively used to measure dose (independent of energy). In other embodiments, the additional method is sensitive to energy, and in one such embodiment SIMS is used to measure energy (independent of dose). Use of such an additional method resolves an ambiguity in a prior art measurement by the primary method alone. The two methods are used in combination in some embodiments, to determine adjustments needed to match two or more ion implanters to one another or to a reference ion implanter or to a computer model.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by use of only one beam of electromagnetic radiation.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation.

Abstract: A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

Abstract: A sidewall or other feature in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. A single beam may be used if it is polarized in a direction substantially perpendicular to a longitudinal direction of the sidewall. A portion of the energy of the beam is absorbed by the sidewall, thereby to cause a decrease in reflectance when compared to reflectance by a flat region. Alternatively, two beams may be used, of which a first beam applies heat to the feature itself or to a region adjacent to the feature, and a second beam is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature.

Abstract: A structure having a number of traces passing through a region is evaluated by using a beam of electromagnetic radiation to illuminate the region, and generating an electrical signal that indicates an attribute of a portion (also called “reflected portion”) of the beam reflected from the region. The just-described acts of “illuminating” and “generating” are repeated in another region, followed by a comparison of the generated signals to identify variation of a property between the two regions. Such measurements can identify variations in material properties (or dimensions) between different regions in a single semiconductor wafer of the type used in fabrication of integrated circuit dice, or even between multiple such wafers. In one embodiment, the traces are each substantially parallel to and adjacent to the other, and the beam has wavelength greater than or equal to a pitch between at least two of the traces. In one implementation the beam is polarized, and can be used in several ways, including, e.g.

Abstract: A coefficient of a function that relates a measurement from a wafer to a parameter used in making the measurement (such as the power of a beam used in the measurement) is determined. The coefficient is used to evaluate the wafer (e.g. to accept or reject the wafer for further processing), and/or to control fabrication of another wafer. In one embodiment, the coefficient is used to control operation of a wafer processing unit (that may include, e.g. an ion implanter), or a heat treatment unit (such as a rapid thermal annealer).

Abstract: Catalyst compositions useful for the polymerization of olefins are disclosed. These compositions comprise a Group 8-10 metal complex comprising a bidentate or variable denticity ligand comprising one or two nitrogen donor atom or atoms independently substituted by an aromatic or heteroaromatic ring(s), wherein the ortho positions of said ring(s) are substituted by aryl or heteroaryl groups. Also disclosed are processes for the polymerization of olefins using the catalyst compositions.

Abstract: The present invention includes novel ligands which may be utilized as part of a catalyst system. A catalyst system of the present invention is a transition metal-ligand complex. In particular, the catalyst system includes a transition metal component and a ligand component comprising a Nitrogen atom and/or functional groups comprising a Nitrogen atom, generally in the form of an imine functional group. In certain embodiments, the ligand component may further comprise a phosphorous atom. Preferred ligand components are bidentate (bind to the transition metal at two or more sites) and include a nitrogen-transition metal bond. The transition metal-ligand complex is generally cationic and associated with a weakly coordinating anion. A catalyst system of the present invention may further comprise a Lewis or Bronsted acid. The Lewis or Bronsted acid may be complexed with the ligand component of the transition metal-ligand complex.

Abstract: Catalyst compositions useful for the polymerization or oligomerization of olefins are disclosed. Certain of the catalyst compositions comprise N-pyrrolyl substituted nitrogen donors. Also disclosed are processes for the polymerization or oligomerization of olefins using the catalyst compositions.

Abstract: Methods for preparing olefin polymers, and catalysts for preparing olefin polymers are disclosed. The polymers can be prepared by contacting the corresponding monomers with a Group 8-10 transition metal catalyst and a solid support. The polymers are suitable for processing in conventional extrusion processes, and can be formed into high barrier sheets or films, or low molecular weight resins for use in synthetic waxes in wax coatings or as emulsions.

Abstract: Improved Group 3-11 transition-metal based catalysts and processes for the polymerization of olefins are described. Some of the ligands are characterized by a preferred substitution pattern which allows for higher productivities of highly branched olefins; substitution patterns which boost productivity or alter the polymer microstructure are also described.

Abstract: Improved Group 3-11 transition metal based catalysts and processes for the polymerization of olefins are described. Some of the ligands are characterized by a preferred substitution pattern which allows for higher productivities of highly branched olefins; substitution patterns which boost productivity or alter the polymer microstructure are also described.

Abstract: Processes for the preparation of 4,5-bisimino-[1,3]dithiolanes and 2,3-bisimino-[1,4]dithianes are described. The processes involve conversion of an oxalamide to a dithiooxalamide, followed by conversion of the dithiooxalamide to either a 4,5-bisimino-[1,3]dithiolane or a 2,3-bisimino-[1,4]dithiane.

Abstract: Methods for preparing olefin polymers, and catalysts for preparing olefin polymers are disclosed. The polymers can be prepared by contacting the corresponding monomers with a Group 8-10 transition metal catalyst and a solid support. The polymers are suitable for processing in conventional extrusion processes, and can be formed into high barrier sheets or films, or low molecular weight resins for use in synthetic waxes in wax coatings or as emulsions.

Abstract: Catalyst compositions useful for the polymerization of olefins are disclosed. These compositions comprise a Group 8-10 metal complex comprising a bidentate or variable denticity ligand comprising one or two nitrogen donor atom or atoms independently substituted by an aromatic or heteroaromatic ring(s), wherein the ortho positions of said ring(s) are substituted by aryl or heteroaryl groups. Also disclosed are processes for the polymerization of olefins using the catalyst compositions.

Abstract: A catalyst for the polymerization of olefins is disclosed. The catalyst comprises a complex comprising (a) a ligand of the formula X, (b) a group 8-10 transition metal, and optionally (c) a Bronsted or Lewis acid, wherein R1 and R6 are each, independently, hydrocarbyl, substituted hydrocarbyl, or silyl; N represents nitrogen; and A and B1 are each, independently, a heteroatom connected mono-radical wherein the connected heteroatom is selected from Group 15 or 16 of the Periodic Table; in addition, A and B1 may be linked to each other by a bridging group. The complex is attached to a solid support. The solid support, the Bronsted or Lewis acid, and the complex may be combined in any order to form the catalyst. A process for making the catalyst is also described. Olefin polymerization and copolymerization processes are also described.

Abstract: Catalyst compositions useful for the polymerization or oligomerization of olefins are disclosed. Certain of the catalyst compositions comprise N-pyrrolyl substituted nitrogen donors. Also disclosed are processes for the polymerization or oligomerization of olefins using the catalyst compositions.

Abstract: A composition comprising a boron or aluminum containing neutral Lewis acid and a compound of formula I or Ia: wherein R1 and R2 are each independently hydrocarbyl, substituted hydrocarbyl, or silyl; Q is (i) C—R4, where R4 is hydrocarbyl, substituted hydrocarbyl, heteroatom connected hydrocarbyl, or heteroatom connected substituted hydrocarbyl, (ii) P(NH2)2, or (iii) S(NH)(NH2) or S(O)(OH); L is a monoolefin or a neutral Lewis base that can be displaced by a monoolefin; T is hydrogen, hydrocarbyl or substituted hydrocarbyl, or with L forms a &pgr;-allyl group; and M is Ni(II), Pd(II), Co(II) or Fe(II). The composition is useful as an olefin polymerization catalyst. Also described is a process for preparing a supported catalyst.